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Items: 1 to 20 of 102

1.

Nanowires grown on InP (100): growth directions, facets, crystal structures, and relative yield control.

Fonseka HA, Caroff P, Wong-Leung J, Ameruddin AS, Tan HH, Jagadish C.

ACS Nano. 2014 Jul 22;8(7):6945-54. doi: 10.1021/nn5017428. Epub 2014 Jun 5.

PMID:
24883914
2.

High vertical yield InP nanowire growth on Si(111) using a thin buffer layer.

Fonseka HA, Tan HH, Wong-Leung J, Kang JH, Parkinson P, Jagadish C.

Nanotechnology. 2013 Nov 22;24(46):465602. doi: 10.1088/0957-4484/24/46/465602. Epub 2013 Oct 24.

PMID:
24157550
3.

Growth of InAs/InP core-shell nanowires with various pure crystal structures.

Gorji Ghalamestani S, Heurlin M, Wernersson LE, Lehmann S, Dick KA.

Nanotechnology. 2012 Jul 20;23(28):285601. doi: 10.1088/0957-4484/23/28/285601. Epub 2012 Jun 21.

PMID:
22717421
4.

Three-dimensional multiple-order twinning of self-catalyzed GaAs nanowires on Si substrates.

Uccelli E, Arbiol J, Magen C, Krogstrup P, Russo-Averchi E, Heiss M, Mugny G, Morier-Genoud F, Nygård J, Morante JR, Fontcuberta I Morral A.

Nano Lett. 2011 Sep 14;11(9):3827-32. doi: 10.1021/nl201902w. Epub 2011 Aug 11.

PMID:
21823613
5.

Crystallinity, Surface Morphology, and Photoelectrochemical Effects in Conical InP and InN Nanowires Grown on Silicon.

Parameshwaran V, Xu X, Clemens B.

ACS Appl Mater Interfaces. 2016 Aug 24;8(33):21454-64. doi: 10.1021/acsami.6b05749. Epub 2016 Aug 15.

PMID:
27455379
6.

Twinning superlattices in indium phosphide nanowires.

Algra RE, Verheijen MA, Borgström MT, Feiner LF, Immink G, van Enckevort WJ, Vlieg E, Bakkers EP.

Nature. 2008 Nov 20;456(7220):369-72. doi: 10.1038/nature07570.

PMID:
19020617
7.

High-Yield Growth and Characterization of ⟨100⟩ InP p-n Diode Nanowires.

Cavalli A, Wang J, Esmaeil Zadeh I, Reimer ME, Verheijen MA, Soini M, Plissard SR, Zwiller V, Haverkort JE, Bakkers EP.

Nano Lett. 2016 May 11;16(5):3071-7. doi: 10.1021/acs.nanolett.6b00203. Epub 2016 Apr 12.

PMID:
27045232
8.

Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles.

Iqbal A, Beech JP, Anttu N, Pistol ME, Samuelson L, Borgström MT, Yartsev A.

Nanotechnology. 2013 Mar 22;24(11):115706. doi: 10.1088/0957-4484/24/11/115706. Epub 2013 Mar 1.

PMID:
23455456
9.

Au-seeded growth of vertical and in-plane III-V nanowires on graphite substrates.

Wallentin J, Kriegner D, Stangl J, Borgström MT.

Nano Lett. 2014;14(4):1707-13. doi: 10.1021/nl403411w. Epub 2014 Mar 4.

10.

Planar GaAs nanowires on GaAs (100) substrates: self-aligned, nearly twin-defect free, and transfer-printable.

Fortuna SA, Wen J, Chun IS, Li X.

Nano Lett. 2008 Dec;8(12):4421-7. doi: 10.1021/nl802331m.

PMID:
19367971
11.

InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch.

Caroff P, Messing ME, Mattias Borg B, Dick KA, Deppert K, Wernersson LE.

Nanotechnology. 2009 Dec 9;20(49):495606. doi: 10.1088/0957-4484/20/49/495606. Epub 2009 Nov 11.

PMID:
19904026
12.

Bidirectional growth of indium phosphide nanowires.

Ikejiri K, Ishizaka F, Tomioka K, Fukui T.

Nano Lett. 2012 Sep 12;12(9):4770-4. doi: 10.1021/nl302202r. Epub 2012 Aug 20.

PMID:
22888965
13.

Uniform and position-controlled InAs nanowires on 2" Si substrates for transistor applications.

Ghalamestani SG, Johansson S, Borg BM, Lind E, Dick KA, Wernersson LE.

Nanotechnology. 2012 Jan 13;23(1):015302. doi: 10.1088/0957-4484/23/1/015302. Epub 2011 Dec 8.

PMID:
22155896
14.

Heteroepitaxial growth of vertical GaAs nanowires on Si(111) substrates by metal-organic chemical vapor deposition.

Bao XY, Soci C, Susac D, Bratvold J, Aplin DP, Wei W, Chen CY, Dayeh SA, Kavanagh KL, Wang D.

Nano Lett. 2008 Nov;8(11):3755-60. doi: 10.1021/nl802062y. Epub 2008 Oct 28.

PMID:
18954121
15.

Structural properties of <111>B -oriented III-V nanowires.

Johansson J, Karlsson LS, Svensson CP, Mårtensson T, Wacaser BA, Deppert K, Samuelson L, Seifert W.

Nat Mater. 2006 Jul;5(7):574-80. Epub 2006 Jun 18.

PMID:
16783358
16.

Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon.

Russo-Averchi E, Heiss M, Michelet L, Krogstrup P, Nygard J, Magen C, Morante JR, Uccelli E, Arbiol J, Fontcuberta i Morral A.

Nanoscale. 2012 Mar 7;4(5):1486-90. doi: 10.1039/c2nr11799a. Epub 2012 Feb 8.

PMID:
22314270
17.

Interaction between lamellar twinning and catalyst dynamics in spontaneous core-shell InGaP nanowires.

Oliveira DS, Tizei LH, Li A, Vasconcelos TL, Senna CA, Archanjo BS, Ugarte D, Cotta MA.

Nanoscale. 2015 Aug 7;7(29):12722-7. doi: 10.1039/c5nr02747k. Epub 2015 Jul 8.

PMID:
26152786
18.

Vertically standing Ge nanowires on GaAs(110) substrates.

Song MS, Jung JH, Kim Y, Wang Y, Zou J, Joyce HJ, Gao Q, Tan HH, Jagadish C.

Nanotechnology. 2008 Mar 26;19(12):125602. doi: 10.1088/0957-4484/19/12/125602. Epub 2008 Feb 21.

PMID:
21817734
19.

Structural transition in indium phosphide nanowires.

Kitauchi Y, Kobayashi Y, Tomioka K, Hara S, Hiruma K, Fukui T, Motohisa J.

Nano Lett. 2010 May 12;10(5):1699-703. doi: 10.1021/nl1000407.

PMID:
20387797
20.

Single-crystal germanium layers grown on silicon by nanowire seeding.

Hu S, Leu PW, Marshall AF, McIntyre PC.

Nat Nanotechnol. 2009 Oct;4(10):649-53. doi: 10.1038/nnano.2009.233. Epub 2009 Aug 23.

PMID:
19809455

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