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Items: 1 to 20 of 100

1.

Dense Si(x)Ge(1-x) (0 < x < 1) materials landscape using extreme conditions and precession electron diffraction.

Serghiou G, Ji G, Koch-Müller M, Odling N, Reichmann HJ, Wright JP, Johnson P.

Inorg Chem. 2014 Jun 2;53(11):5656-62. doi: 10.1021/ic500416s. Epub 2014 May 14.

PMID:
24824209
2.

Correlation between structural and semiconductor-metal changes and extreme conditions materials chemistry in Ge-Sn.

Guillaume CL, Serghiou G, Thomson A, Morniroli JP, Frost DJ, Odling N, Jeffree CE.

Inorg Chem. 2010 Sep 20;49(18):8230-6. doi: 10.1021/ic100273q.

PMID:
20712328
3.

In situ X-ray absorption spectroscopy study of Si(1-x)Ge(x)O2 dissolution and germanium aqueous speciation under hydrothermal conditions.

Ranieri V, Haines J, Cambon O, Levelut C, Le Parc R, Cambon M, Hazemann JL.

Inorg Chem. 2012 Jan 2;51(1):414-9. doi: 10.1021/ic201856p. Epub 2011 Dec 16.

PMID:
22175278
4.

Establishing the structure of GeS(2) at high pressures and temperatures: a combined approach using x-ray and neutron diffraction.

Zeidler A, Drewitt JW, Salmon PS, Barnes AC, Crichton WA, Klotz S, Fischer HE, Benmore CJ, Ramos S, Hannon AC.

J Phys Condens Matter. 2009 Nov 25;21(47):474217. doi: 10.1088/0953-8984/21/47/474217. Epub 2009 Nov 5.

PMID:
21832496
5.

Mixed Si/Ge nine-atom Zintl clusters: ESI mass spectrometric investigations and single-crystal structure determination of paramagnetic [Si(9-x)Ge(x)]3-.

Waibel M, Fässler TF.

Inorg Chem. 2013 May 20;52(10):5861-6. doi: 10.1021/ic302802h. Epub 2013 Apr 29.

PMID:
23627268
6.

Tuning between mixing and reactivity in the Ge-Sn system using pressure and temperature.

Guillaume C, Serghiou G, Thomson A, Morniroli JP, Frost DJ, Odling N, Mezouar M.

J Am Chem Soc. 2009 Jun 10;131(22):7550-1. doi: 10.1021/ja902466w.

PMID:
19489640
7.

EXAFS measurements for liquid Ge-Si alloys.

Inui M, Matsusaka T, Ishikawa D, Sakaguchi Y, Hong X, Kazi MH, Tamura K.

J Synchrotron Radiat. 2001 Mar 1;8(Pt 2):767-9.

PMID:
11512925
8.

Creating Reactivity with Unstable Endmembers using Pressure and Temperature: Synthesis of Bulk Cubic Mg0.4 Fe0.6 N.

Serghiou G, Ji G, Odling N, Reichmann HJ, Morniroli JP, Boehler R, Frost DJ, Wright JP, Wunder B.

Angew Chem Int Ed Engl. 2015 Dec 7;54(50):15109-12. doi: 10.1002/anie.201506257. Epub 2015 Oct 28.

PMID:
26509919
9.
10.

Synthesis of silicon-based infrared semiconductors in the Ge-Sn system using molecular chemistry methods.

Taraci J, Zollner S, McCartney MR, Menendez J, Santana-Aranda MA, Smith DJ, Haaland A, Tutukin AV, Gundersen G, Wolf G, Kouvetakis J.

J Am Chem Soc. 2001 Nov 7;123(44):10980-7.

PMID:
11686702
11.

Structure and dynamics of the fast lithium ion conductor "Li7La3Zr2O12".

Buschmann H, Dölle J, Berendts S, Kuhn A, Bottke P, Wilkening M, Heitjans P, Senyshyn A, Ehrenberg H, Lotnyk A, Duppel V, Kienle L, Janek J.

Phys Chem Chem Phys. 2011 Nov 21;13(43):19378-92. doi: 10.1039/c1cp22108f. Epub 2011 Oct 10.

PMID:
21986676
12.

Molecular-based synthetic approach to new group IV materials for high-efficiency, low-cost solar cells and Si-based optoelectronics.

Fang YY, Xie J, Tolle J, Roucka R, D'Costa VR, Chizmeshya AV, Menendez J, Kouvetakis J.

J Am Chem Soc. 2008 Nov 26;130(47):16095-102. doi: 10.1021/ja806636c.

PMID:
19032100
13.

Phase relations and crystal structures in the system Ta-V-Ge.

Khan AU, Bursik J, Rogl P.

Dalton Trans. 2012 May 28;41(20):6206-14. doi: 10.1039/c2dt12455f. Epub 2012 Apr 11.

PMID:
22491521
14.

On the formation and photoluminescence of Si(1-x)Ge(x) nanoparticles.

Chen PJ, Tsai MY, Chi CC, Perng TP.

J Nanosci Nanotechnol. 2007 Sep;7(9):3340-3.

PMID:
18019172
15.

[(η2-(Si/Ge)4)Zn(η2-(Si/Ge)4)](6-)- novel Zintl clusters with mixed Si/Ge tetrahedra bridged by a Zn atom.

Waibel M, Henneberger T, Jantke LA, Fässler TF.

Chem Commun (Camb). 2012 Sep 7;48(69):8676-8. doi: 10.1039/c2cc33652a. Epub 2012 Jul 24.

PMID:
22825026
16.

CO2-helium and CO2-neon mixtures at high pressures.

Mallick B, Ninet S, Le Marchand G, Munsch P, Datchi F.

J Chem Phys. 2013 Jan 28;138(4):044505. doi: 10.1063/1.4788621.

PMID:
23387603
17.

Composition, structure, bonding and thermoelectric properties of "CuT2P3" and "CuT4P3", members of the T(1-x)(CuP3)x series with T being Si and Ge.

Wang P, Ahmadpour F, Kolodiazhnyi T, Kracher A, Cranswick LM, Mozharivskyj Y.

Dalton Trans. 2010 Jan 28;39(4):1105-12. doi: 10.1039/b914555a. Epub 2009 Oct 15.

PMID:
20066198
18.
19.

Ca10Pt7Tt3 (Tt = Si, Ge): new platinide phases featuring electron-rich 4c-6e bonded [Pt7Tt3]20- intermetalloid clusters.

Doverbratt I, Ponou S, Lidin S, Fredrickson DC.

Inorg Chem. 2012 Nov 5;51(21):11980-5. doi: 10.1021/ic301867q. Epub 2012 Oct 22.

PMID:
23088157
20.

Substitutional alloy of Ce and Al.

Zeng QS, Ding Y, Mao WL, Luo W, Blomqvist A, Ahuja R, Yang W, Shu J, Sinogeikin SV, Meng Y, Brewe DL, Jiang JZ, Mao HK.

Proc Natl Acad Sci U S A. 2009 Feb 24;106(8):2515-8. doi: 10.1073/pnas.0813328106. Epub 2009 Feb 2.

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