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Items: 1 to 20 of 294

1.

Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors.

Buscema M, Groenendijk DJ, Blanter SI, Steele GA, van der Zant HS, Castellanos-Gomez A.

Nano Lett. 2014 Jun 11;14(6):3347-52. doi: 10.1021/nl5008085. Epub 2014 May 13.

PMID:
24821381
2.

Surface transfer doping induced effective modulation on ambipolar characteristics of few-layer black phosphorus.

Xiang D, Han C, Wu J, Zhong S, Liu Y, Lin J, Zhang XA, Ping Hu W, Özyilmaz B, Neto AH, Wee AT, Chen W.

Nat Commun. 2015 Mar 12;6:6485. doi: 10.1038/ncomms7485.

PMID:
25761440
3.

Black phosphorus-monolayer MoS2 van der Waals heterojunction p-n diode.

Deng Y, Luo Z, Conrad NJ, Liu H, Gong Y, Najmaei S, Ajayan PM, Lou J, Xu X, Ye PD.

ACS Nano. 2014 Aug 26;8(8):8292-9.

PMID:
25019534
4.

Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating.

Buscema M, Groenendijk DJ, Steele GA, van der Zant HS, Castellanos-Gomez A.

Nat Commun. 2014 Aug 28;5:4651. doi: 10.1038/ncomms5651.

PMID:
25164986
5.

Black phosphorus radio-frequency transistors.

Wang H, Wang X, Xia F, Wang L, Jiang H, Xia Q, Chin ML, Dubey M, Han SJ.

Nano Lett. 2014 Nov 12;14(11):6424-9. doi: 10.1021/nl5029717. Epub 2014 Nov 3.

PMID:
25347787
6.

Broadband nonlinear optical response in multi-layer black phosphorus: an emerging infrared and mid-infrared optical material.

Lu SB, Miao LL, Guo ZN, Qi X, Zhao CJ, Zhang H, Wen SC, Tang DY, Fan DY.

Opt Express. 2015 May 4;23(9):11183-94. doi: 10.1364/OE.23.011183.

PMID:
25969214
7.

Flexible black phosphorus ambipolar transistors, circuits and AM demodulator.

Zhu W, Yogeesh MN, Yang S, Aldave SH, Kim JS, Sonde S, Tao L, Lu N, Akinwande D.

Nano Lett. 2015 Mar 11;15(3):1883-90. doi: 10.1021/nl5047329. Epub 2015 Mar 2.

PMID:
25715122
8.

Phosphorene: an unexplored 2D semiconductor with a high hole mobility.

Liu H, Neal AT, Zhu Z, Luo Z, Xu X, Tománek D, Ye PD.

ACS Nano. 2014 Apr 22;8(4):4033-41. doi: 10.1021/nn501226z. Epub 2014 Mar 21.

PMID:
24655084
9.

Strain-Modulated Bandgap and Piezo-Resistive Effect in Black Phosphorus Field-Effect Transistors.

Zhang Z, Li L, Horng J, Wang NZ, Yang F, Yu Y, Zhang Y, Chen G, Watanabe K, Taniguchi T, Chen XH, Wang F, Zhang Y.

Nano Lett. 2017 Oct 11;17(10):6097-6103. doi: 10.1021/acs.nanolett.7b02624. Epub 2017 Sep 11.

PMID:
28853900
10.

Synthesis, Characterization, and Device Application of Antimony-Substituted Violet Phosphorus: A Layered Material.

Baumer F, Ma Y, Shen C, Zhang A, Chen L, Liu Y, Pfister D, Nilges T, Zhou C.

ACS Nano. 2017 Apr 25;11(4):4105-4113. doi: 10.1021/acsnano.7b00798. Epub 2017 Apr 7.

PMID:
28362482
11.

Tunable transport gap in phosphorene.

Das S, Zhang W, Demarteau M, Hoffmann A, Dubey M, Roelofs A.

Nano Lett. 2014 Oct 8;14(10):5733-9. doi: 10.1021/nl5025535. Epub 2014 Aug 13. Erratum in: Nano Lett. 2016 Mar 9;16(3):2122.

PMID:
25111042
12.

Few-Layer Black Phosphorus Carbide Field-Effect Transistor via Carbon Doping.

Tan WC, Cai Y, Ng RJ, Huang L, Feng X, Zhang G, Zhang YW, Nijhuis CA, Liu X, Ang KW.

Adv Mater. 2017 Jun;29(24). doi: 10.1002/adma.201700503. Epub 2017 Apr 12.

PMID:
28401603
13.

Ambipolar insulator-to-metal transition in black phosphorus by ionic-liquid gating.

Saito Y, Iwasa Y.

ACS Nano. 2015 Mar 24;9(3):3192-8. doi: 10.1021/acsnano.5b00497. Epub 2015 Mar 2.

PMID:
25712777
14.

Highly Efficient and Air-Stable Infrared Photodetector Based on 2D Layered Graphene-Black Phosphorus Heterostructure.

Liu Y, Shivananju BN, Wang Y, Zhang Y, Yu W, Xiao S, Sun T, Ma W, Mu H, Lin S, Zhang H, Lu Y, Qiu CW, Li S, Bao Q.

ACS Appl Mater Interfaces. 2017 Oct 18;9(41):36137-36145. doi: 10.1021/acsami.7b09889. Epub 2017 Oct 5.

PMID:
28948769
15.

Air-stable few-layer black phosphorus phototransistor for near-infrared detection.

Na J, Park K, Kim JT, Choi WK, Song YW.

Nanotechnology. 2017 Feb 24;28(8):085201. doi: 10.1088/1361-6528/aa55e4. Epub 2016 Dec 28.

PMID:
28028247
16.

Surface Functionalization of Black Phosphorus via Potassium toward High-Performance Complementary Devices.

Han C, Hu Z, Gomes LC, Bao Y, Carvalho A, Tan SJR, Lei B, Xiang D, Wu J, Qi D, Wang L, Huo F, Huang W, Loh KP, Chen W.

Nano Lett. 2017 Jul 12;17(7):4122-4129. doi: 10.1021/acs.nanolett.7b00903. Epub 2017 Jun 22.

PMID:
28627894
17.

Humidity Sensing and Photodetection Behavior of Electrochemically Exfoliated Atomically Thin-Layered Black Phosphorus Nanosheets.

Erande MB, Pawar MS, Late DJ.

ACS Appl Mater Interfaces. 2016 May 11;8(18):11548-56. doi: 10.1021/acsami.5b10247. Epub 2016 Apr 28.

PMID:
27096546
18.

Dual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron Nitride as Dielectric and Passivation Layers.

Ra HS, Lee AY, Kwak DH, Jeong MH, Lee JS.

ACS Appl Mater Interfaces. 2018 Jan 10;10(1):925-932. doi: 10.1021/acsami.7b16809. Epub 2017 Dec 27.

PMID:
29256593
19.

Ambipolar molybdenum diselenide field-effect transistors: field-effect and Hall mobilities.

Pradhan NR, Rhodes D, Xin Y, Memaran S, Bhaskaran L, Siddiq M, Hill S, Ajayan PM, Balicas L.

ACS Nano. 2014 Aug 26;8(8):7923-9. doi: 10.1021/nn501693d. Epub 2014 Jul 14.

PMID:
25007391
20.

Ambipolar MoS2 thin flake transistors.

Zhang Y, Ye J, Matsuhashi Y, Iwasa Y.

Nano Lett. 2012 Mar 14;12(3):1136-40. doi: 10.1021/nl2021575. Epub 2012 Feb 10.

PMID:
22276648

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