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Items: 1 to 20 of 91

1.

Charge transfer doping of silicon.

Rietwyk KJ, Smets Y, Bashouti M, Christiansen SH, Schenk A, Tadich A, Edmonds MT, Ristein J, Ley L, Pakes CI.

Phys Rev Lett. 2014 Apr 18;112(15):155502. Epub 2014 Apr 18.

PMID:
24785050
2.

Surface transfer doping of hydrogen-terminated diamond by C60F48: energy level scheme and doping efficiency.

Edmonds MT, Wanke M, Tadich A, Vulling HM, Rietwyk KJ, Sharp PL, Stark CB, Smets Y, Schenk A, Wu QH, Ley L, Pakes CI.

J Chem Phys. 2012 Mar 28;136(12):124701. doi: 10.1063/1.3695643.

PMID:
22462882
3.

Surface Charge Transfer Doping via Transition Metal Oxides for Efficient p-Type Doping of II-VI Nanostructures.

Xia F, Shao Z, He Y, Wang R, Wu X, Jiang T, Duhm S, Zhao J, Lee ST, Jie J.

ACS Nano. 2016 Nov 22;10(11):10283-10293. Epub 2016 Nov 4.

PMID:
27798826
4.
5.

Silicon/molecule interfacial electronic modifications.

He T, Ding H, Peor N, Lu M, Corley DA, Chen B, Ofir Y, Gao Y, Yitzchaik S, Tour JM.

J Am Chem Soc. 2008 Feb 6;130(5):1699-710. doi: 10.1021/ja0768789. Epub 2008 Jan 9.

PMID:
18181625
6.

Doping effects on ablation enhancement in femtosecond laser irradiation of silicon.

Fang J, Jiang L, Cao Q, Zhang K, Yuan Y, Lu Y.

Appl Opt. 2014 Jun 20;53(18):3897-902. doi: 10.1364/AO.53.003897.

PMID:
24979420
7.

Electronic structure of large disc-type donors and acceptors.

Medjanik K, Kutnyakhov D, Nepijko SA, Schönhense G, Naghavi S, Alijani V, Felser C, Koch N, Rieger R, Baumgarten M, Müllen K.

Phys Chem Chem Phys. 2010 Jul 14;12(26):7184-93. doi: 10.1039/b926999a. Epub 2010 May 19.

PMID:
20485783
8.

Electron-transfer doping on a (001) surface of diamond: quantum mechanical study.

Petrini D, Larsson K.

J Phys Chem B. 2005 Dec 1;109(47):22426-31.

PMID:
16853921
9.

Electronic structure of methoxy-, bromo-, and nitrobenzene grafted onto Si(111).

Hunger R, Jaegermann W, Merson A, Shapira Y, Pettenkofer C, Rappich J.

J Phys Chem B. 2006 Aug 10;110(31):15432-41.

PMID:
16884265
10.

Quantifying the Extent of Contact Doping at the Interface between High Work Function Electrical Contacts and Poly(3-hexylthiophene) (P3HT).

Shallcross RC, Stubhan T, Ratcliff EL, Kahn A, Brabec CJ, Armstrong NR.

J Phys Chem Lett. 2015 Apr 16;6(8):1303-9. doi: 10.1021/acs.jpclett.5b00444. Epub 2015 Mar 27.

PMID:
26263127
11.

Pronounced Surface Band Bending of Thin-Film Silicon Revealed by Modeling Core Levels Probed with Hard X-rays.

Wippler D, Wilks RG, Pieters BE, van Albada SJ, Gerlach D, Hüpkes J, Bär M, Rau U.

ACS Appl Mater Interfaces. 2016 Jul 13;8(27):17685-93. doi: 10.1021/acsami.6b04666. Epub 2016 Jun 29.

PMID:
27294978
12.

Strong charge-transfer doping of 1 to 10 layer graphene by NO₂.

Crowther AC, Ghassaei A, Jung N, Brus LE.

ACS Nano. 2012 Feb 28;6(2):1865-75. doi: 10.1021/nn300252a. Epub 2012 Jan 30.

PMID:
22276666
13.

Surface doping and band gap tunability in hydrogenated graphene.

Matis BR, Burgess JS, Bulat FA, Friedman AL, Houston BH, Baldwin JW.

ACS Nano. 2012 Jan 24;6(1):17-22. doi: 10.1021/nn2034555. Epub 2012 Jan 10.

PMID:
22187951
14.

Evolution of the SrTiO3-MoO3 Interface Electronic Structure: An in Situ Photoelectron Spectroscopy Study.

Du Y, Peng HY, Mao H, Jin KX, Wang H, Li F, Gao XY, Chen W, Wu T.

ACS Appl Mater Interfaces. 2015 Jun 3;7(21):11309-14. doi: 10.1021/acsami.5b01698. Epub 2015 May 21.

PMID:
25964994
15.

Controllable molecular modulation of conductivity in silicon-based devices.

He T, Corley DA, Lu M, Di Spigna NH, He J, Nackashi DP, Franzon PD, Tour JM.

J Am Chem Soc. 2009 Jul 29;131(29):10023-30. doi: 10.1021/ja9002537.

PMID:
19569647
16.

Enhanced charge transfer in a monolayer of the organic charge transfer complex TTF-TNAP on Au(111).

Umbach TR, Fernandez-Torrente I, Ladenthin JN, Pascual JI, Franke KJ.

J Phys Condens Matter. 2012 Sep 5;24(35):354003. doi: 10.1088/0953-8984/24/35/354003. Epub 2012 Aug 16.

PMID:
22898901
17.

Charge transfer between the Au(111) surface and adsorbed C(60): Resonant photoemission and new core-hole decay channels.

Britton AJ, Rienzo A, O'Shea JN, Schulte K.

J Chem Phys. 2010 Sep 7;133(9):094705. doi: 10.1063/1.3488299.

PMID:
20831331
18.

Physical adsorption and charge transfer of molecular Br2 on graphene.

Chen Z, Darancet P, Wang L, Crowther AC, Gao Y, Dean CR, Taniguchi T, Watanabe K, Hone J, Marianetti CA, Brus LE.

ACS Nano. 2014 Mar 25;8(3):2943-50. doi: 10.1021/nn500265f. Epub 2014 Feb 17.

PMID:
24528378
19.

Spatially resolved, energy-filtered imaging of core level and valence band photoemission of highly p and n doped silicon patterns.

Barrett N, Zagonel LF, Renault O, Bailly A.

J Phys Condens Matter. 2009 Aug 5;21(31):314015. doi: 10.1088/0953-8984/21/31/314015. Epub 2009 Jul 7.

PMID:
21828576
20.

Boosting the Boron Dopant Level in Monolayer Doping by Carboranes.

Ye L, González-Campo A, Núñez R, de Jong MP, Kudernac T, van der Wiel WG, Huskens J.

ACS Appl Mater Interfaces. 2015 Dec 16;7(49):27357-61. doi: 10.1021/acsami.5b08952. Epub 2015 Dec 7.

PMID:
26595856

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