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Items: 1 to 20 of 141

1.

Pump-probe surface photovoltage spectroscopy measurements on semiconductor epitaxial layers.

Jana D, Porwal S, Sharma TK, Kumar S, Oak SM.

Rev Sci Instrum. 2014 Apr;85(4):043909. doi: 10.1063/1.4871990.

PMID:
24784628
2.

Energy Bandgap and Edge States in an Epitaxially Grown Graphene/h-BN Heterostructure.

Hwang B, Hwang J, Yoon JK, Lim S, Kim S, Lee M, Kwon JH, Baek H, Sung D, Kim G, Hong S, Ihm J, Stroscio JA, Kuk Y.

Sci Rep. 2016 Aug 9;6:31160. doi: 10.1038/srep31160.

3.

Broadband sensitive pump-probe setup for ultrafast optical switching of photonic nanostructures and semiconductors.

Euser TG, Harding PJ, Vos WL.

Rev Sci Instrum. 2009 Jul;80(7):073104. doi: 10.1063/1.3156049.

PMID:
19655940
4.

Bias dependence of sub-bandgap light detection for core-shell silicon nanowires.

Zhou Y, Liu YH, Cheng J, Lo YH.

Nano Lett. 2012 Nov 14;12(11):5929-35. doi: 10.1021/nl3033558. Epub 2012 Oct 29.

PMID:
23098159
5.

Surface photovoltage spectroscopy in a Kelvin probe force microscope under ultrahigh vacuum.

Streicher F, Sadewasser S, Lux-Steiner MCh.

Rev Sci Instrum. 2009 Jan;80(1):013907. doi: 10.1063/1.3072661.

PMID:
19191447
6.

Surface dominant photoresponse of multiferroic BiFeO3 nanowires under sub-bandgap illumination.

Prashanthi K, Gaikwad R, Thundat T.

Nanotechnology. 2013 Dec 20;24(50):505710. doi: 10.1088/0957-4484/24/50/505710. Epub 2013 Nov 27.

PMID:
24284807
7.
8.

Heteroepitaxy of La2O3 and La(2-x)Y(x)O3 on GaAs (111)A by atomic layer deposition: achieving low interface trap density.

Wang X, Dong L, Zhang J, Liu Y, Ye PD, Gordon RG.

Nano Lett. 2013 Feb 13;13(2):594-9. doi: 10.1021/nl3041349. Epub 2013 Jan 7.

PMID:
23294262
9.

Photothermal deflection studies of GaAs epitaxial layers.

George NA, Vallabhan CP, Nampoori VP, Radhakrishnan P.

Appl Opt. 2002 Aug 20;41(24):5179-84.

PMID:
12206230
10.

IV-VI semiconductor growth on silicon substrates and new mid-infrared laser fabrication methods

McCann PJ, Chao IN, Sachar H, McAlister D, Li CP, Fang XM, Wu H, Namjou K.

Spectrochim Acta A Mol Biomol Spectrosc. 1999 Sep 1;55A(10):1999-2005.

PMID:
10643675
11.

[Synthesis, structure and surface photovoltage spectrum of coordination supramolecule: [Cu(phen) (H2O)2. SO4]].

Kou J.

Guang Pu Xue Yu Guang Pu Fen Xi. 2008 Feb;28(2):361-5. Chinese.

PMID:
18479023
12.

Diversity of sub-bandgap states in lead-sulfide nanocrystals: real-space spectroscopy and mapping at the atomic-scale.

Gervasi CF, Kislitsyn DA, Allen TL, Hackley JD, Maruyama R, Nazin GV.

Nanoscale. 2015 Dec 14;7(46):19732-42. doi: 10.1039/c5nr05236j.

PMID:
26556538
13.

Symmetry breaking induced bandgap in epitaxial graphene layers on SiC.

Peng X, Ahuja R.

Nano Lett. 2008 Dec;8(12):4464-8. doi: 10.1021/nl802409q.

PMID:
19368005
14.

Temperature dependence of surface photovoltage spectroscopy in vertically coupled self-organized InAs/GaAs quantum dots.

Chan CH, Huang YS, Wang JS, Tiong KK.

Opt Express. 2007 Feb 19;15(4):1898-906.

PMID:
19532428
15.

Large defect-induced sub-bandgap photoresponse in semiconductor nanowires via waveguiding excitation.

Gu F, Zhang L, Yu H, Fang W, Bao J, Tong L.

Nanotechnology. 2011 Oct 21;22(42):425201. doi: 10.1088/0957-4484/22/42/425201. Epub 2011 Sep 22.

PMID:
21937788
16.

Ultra-broadband infrared pump-probe spectroscopy using synchrotron radiation and a tuneable pump.

Carroll L, Friedli P, Lerch P, Schneider J, Treyer D, Hunziker S, Stutz S, Sigg H.

Rev Sci Instrum. 2011 Jun;82(6):063101. doi: 10.1063/1.3592332.

PMID:
21721668
17.

Epitaxial Fe3Si films on GaAs(100) substrates by means of electron beam evaporation.

Thomas J, Schumann J, Vinzelberg H, Arushanov E, Engelhard R, Schmidt OG, Gemming T.

Nanotechnology. 2009 Jun 10;20(23):235604. doi: 10.1088/0957-4484/20/23/235604. Epub 2009 May 19.

PMID:
19451681
18.

Bandgap, mid-gap states, and gating effects in MoS2.

Lu CP, Li G, Mao J, Wang LM, Andrei EY.

Nano Lett. 2014 Aug 13;14(8):4628-33. doi: 10.1021/nl501659n. Epub 2014 Jul 11.

PMID:
25004377
19.

Picosecond pump-probe measurement of bandgap changes in SiO2/TiO2 one-dimensional photonic bandgap structures.

Hwang J, Kim MJ, Wu JW, Lee SM, Rhee BK.

Opt Lett. 2006 Feb 1;31(3):377-9.

PMID:
16480214
20.

Electron mobilities approaching bulk limits in "surface-free" GaAs nanowires.

Joyce HJ, Parkinson P, Jiang N, Docherty CJ, Gao Q, Tan HH, Jagadish C, Herz LM, Johnston MB.

Nano Lett. 2014 Oct 8;14(10):5989-94. doi: 10.1021/nl503043p. Epub 2014 Sep 26.

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