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Items: 1 to 20 of 218

1.

High performance and bendable few-layered InSe photodetectors with broad spectral response.

Tamalampudi SR, Lu YY, Kumar U R, Sankar R, Liao CD, Moorthy B K, Cheng CH, Chou FC, Chen YT.

Nano Lett. 2014 May 14;14(5):2800-6. doi: 10.1021/nl500817g. Epub 2014 Apr 21.

PMID:
24742243
2.

Highly responsive ultrathin GaS nanosheet photodetectors on rigid and flexible substrates.

Hu P, Wang L, Yoon M, Zhang J, Feng W, Wang X, Wen Z, Idrobo JC, Miyamoto Y, Geohegan DB, Xiao K.

Nano Lett. 2013 Apr 10;13(4):1649-54. doi: 10.1021/nl400107k. Epub 2013 Mar 6.

PMID:
23465066
3.

Centimeter-Scale Deposition of Mo0.5W0.5Se2 Alloy Film for High-Performance Photodetectors on Versatile Substrates.

Zheng Z, Yao J, Yang G.

ACS Appl Mater Interfaces. 2017 May 3;9(17):14920-14928. doi: 10.1021/acsami.7b02166. Epub 2017 Apr 21.

PMID:
28406009
4.

Flexible visible-light photodetectors with broad photoresponse based on ZrS3 nanobelt films.

Tao YR, Wu XC, Xiong WW.

Small. 2014 Dec 10;10(23):4905-11. doi: 10.1002/smll.201401376. Epub 2014 Jul 22.

PMID:
25048818
5.

Ultrasensitive Near-Infrared Photodetectors Based on a Graphene-MoTe2-Graphene Vertical van der Waals Heterostructure.

Zhang K, Fang X, Wang Y, Wan Y, Song Q, Zhai W, Li Y, Ran G, Ye Y, Dai L.

ACS Appl Mater Interfaces. 2017 Feb 15;9(6):5392-5398. doi: 10.1021/acsami.6b14483. Epub 2017 Feb 6.

PMID:
28111947
6.

Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures.

Yan F, Zhao L, Patanè A, Hu P, Wei X, Luo W, Zhang D, Lv Q, Feng Q, Shen C, Chang K, Eaves L, Wang K.

Nanotechnology. 2017 Jul 7;28(27):27LT01. doi: 10.1088/1361-6528/aa749e.

PMID:
28531090
7.

Epitaxy and photoresponse of two-dimensional GaSe crystals on flexible transparent mica sheets.

Zhou Y, Nie Y, Liu Y, Yan K, Hong J, Jin C, Zhou Y, Yin J, Liu Z, Peng H.

ACS Nano. 2014 Feb 25;8(2):1485-90. doi: 10.1021/nn405529r. Epub 2014 Jan 8.

PMID:
24392815
8.

Optical contrast of 2D InSe on SiO2/Si and transparent substrates using bandpass filters.

Brotons-Gisbert M, Andres-Penares D, Martínez-Pastor JP, Cros A, Sánchez-Royo JF.

Nanotechnology. 2017 Mar 17;28(11):115706. doi: 10.1088/1361-6528/aa5bb1. Epub 2017 Jan 24.

PMID:
28117306
9.

Thickness dependence on the optoelectronic properties of multilayered GaSe based photodetector.

Ko PJ, Abderrahmane A, Takamura T, Kim NH, Sandhu A.

Nanotechnology. 2016 Aug 12;27(32):325202. doi: 10.1088/0957-4484/27/32/325202. Epub 2016 Jun 29.

PMID:
27354428
10.

Hierarchical CdS Nanowires Based Rigid and Flexible Photodetectors with Ultrahigh Sensitivity.

Li L, Lou Z, Shen G.

ACS Appl Mater Interfaces. 2015 Oct 28;7(42):23507-14. doi: 10.1021/acsami.5b06070. Epub 2015 Oct 13.

PMID:
26439364
11.

Evolution of the electronic band structure and efficient photo-detection in atomic layers of InSe.

Lei S, Ge L, Najmaei S, George A, Kappera R, Lou J, Chhowalla M, Yamaguchi H, Gupta G, Vajtai R, Mohite AD, Ajayan PM.

ACS Nano. 2014 Feb 25;8(2):1263-72. doi: 10.1021/nn405036u. Epub 2014 Jan 13.

PMID:
24392873
12.

Flexible, transparent and ultra-broadband photodetector based on large-area WSe2 film for wearable devices.

Zheng Z, Zhang T, Yao J, Zhang Y, Xu J, Yang G.

Nanotechnology. 2016 Jun 3;27(22):225501. doi: 10.1088/0957-4484/27/22/225501. Epub 2016 Apr 25.

PMID:
27109239
13.

Near-Infrared Photodetectors Based on MoTe2 /Graphene Heterostructure with High Responsivity and Flexibility.

Yu W, Li S, Zhang Y, Ma W, Sun T, Yuan J, Fu K, Bao Q.

Small. 2017 Jun;13(24). doi: 10.1002/smll.201700268. Epub 2017 Apr 11.

PMID:
28398007
14.

Wafer-Scale Synthesis of High-Quality Semiconducting Two-Dimensional Layered InSe with Broadband Photoresponse.

Yang Z, Jie W, Mak CH, Lin S, Lin H, Yang X, Yan F, Lau SP, Hao J.

ACS Nano. 2017 Apr 25;11(4):4225-4236. doi: 10.1021/acsnano.7b01168. Epub 2017 Mar 22.

PMID:
28316242
15.

Topological Crystalline Insulator SnTe/Si Vertical Heterostructure Photodetectors for High-Performance Near-Infrared Detection.

Zhang H, Man B, Zhang Q.

ACS Appl Mater Interfaces. 2017 Apr 26;9(16):14067-14077. doi: 10.1021/acsami.7b01098. Epub 2017 Apr 14.

PMID:
28398029
16.

Controlled vapor phase growth of single crystalline, two-dimensional GaSe crystals with high photoresponse.

Li X, Lin MW, Puretzky AA, Idrobo JC, Ma C, Chi M, Yoon M, Rouleau CM, Kravchenko II, Geohegan DB, Xiao K.

Sci Rep. 2014 Jun 30;4:5497. doi: 10.1038/srep05497.

17.

Synthesis of few-layer GaSe nanosheets for high performance photodetectors.

Hu P, Wen Z, Wang L, Tan P, Xiao K.

ACS Nano. 2012 Jul 24;6(7):5988-94. doi: 10.1021/nn300889c. Epub 2012 Jun 7.

PMID:
22676041
18.

Broadband photodetectors based on graphene-Bi2Te3 heterostructure.

Qiao H, Yuan J, Xu Z, Chen C, Lin S, Wang Y, Song J, Liu Y, Khan Q, Hoh HY, Pan CX, Li S, Bao Q.

ACS Nano. 2015 Feb 24;9(2):1886-94. doi: 10.1021/nn506920z. Epub 2015 Jan 23.

PMID:
25598406
19.

High-performance MoS2/Si heterojunction broadband photodetectors from deep ultraviolet to near infrared.

Lou Z, Zeng L, Wang Y, Wu D, Xu T, Shi Z, Tian Y, Li X, Tsang YH.

Opt Lett. 2017 Sep 1;42(17):3335-3338. doi: 10.1364/OL.42.003335.

PMID:
28957098
20.

Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and graphene.

Amani M, Burke RA, Proie RM, Dubey M.

Nanotechnology. 2015 Mar 20;26(11):115202. doi: 10.1088/0957-4484/26/11/115202. Epub 2015 Feb 24.

PMID:
25709100

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