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Items: 1 to 20 of 172

1.

Structure and morphology in diffusion-driven growth of nanowires: the case of ZnTe.

Rueda-Fonseca P, Bellet-Amalric E, Vigliaturo R, den Hertog M, Genuist Y, André R, Robin E, Artioli A, Stepanov P, Ferrand D, Kheng K, Tatarenko S, Cibert J.

Nano Lett. 2014;14(4):1877-83. doi: 10.1021/nl4046476. Epub 2014 Mar 6.

PMID:
24564275
2.

Wurtzite ZnTe Nanotrees and Nanowires on Fluorine-Doped Tin Oxide Glass Substrates.

Song MS, Choi SB, Kim Y.

Nano Lett. 2017 Jul 12;17(7):4365-4372. doi: 10.1021/acs.nanolett.7b01446. Epub 2017 Jun 29.

PMID:
28654296
3.

Evidence for structural phase transitions induced by the triple phase line shift in self-catalyzed GaAs nanowires.

Yu X, Wang H, Lu J, Zhao J, Misuraca J, Xiong P, von Molnár S.

Nano Lett. 2012 Oct 10;12(10):5436-42. doi: 10.1021/nl303323t. Epub 2012 Sep 18.

PMID:
22984828
4.

TEM characterization of MBE grown CdTe/ZnTe axial nanowires.

Dłuzewski P, Janik E, Kret S, Zaleszczyk W, Tang D, Karczewski G, Wojtowicz T.

J Microsc. 2010 Mar;237(3):337-40. doi: 10.1111/j.1365-2818.2009.03256.x.

5.

Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy.

Wang CY, Hong YC, Ko ZJ, Su YW, Huang JH.

Nanoscale Res Lett. 2017 Dec;12(1):290. doi: 10.1186/s11671-017-2063-3. Epub 2017 Apr 21.

6.

Zn(1-x)Mg(x)Te nanowires grown by solid source molecular beam epitaxy.

Janik E, Dynowska E, Dłużewski P, Kret S, Presz A, Zaleszczyk W, Szuszkiewicz W, Morhange JF, Petroutchik A, Maćkowski S, Wojtowicz T.

Nanotechnology. 2008 Sep 10;19(36):365606. doi: 10.1088/0957-4484/19/36/365606. Epub 2008 Jul 28.

PMID:
21828877
7.

Wurtzite/Zinc-Blende 'K'-shape InAs Nanowires with Embedded Two-Dimensional Wurtzite Plates.

Kang JH, Galicka M, Kacman P, Shtrikman H.

Nano Lett. 2017 Jan 11;17(1):531-537. doi: 10.1021/acs.nanolett.6b04598. Epub 2016 Dec 28.

PMID:
28002676
8.

Position-controlled growth of GaN nanowires and nanotubes on diamond by molecular beam epitaxy.

Schuster F, Hetzl M, Weiszer S, Garrido JA, de la Mata M, Magen C, Arbiol J, Stutzmann M.

Nano Lett. 2015 Mar 11;15(3):1773-9. doi: 10.1021/nl504446r. Epub 2015 Feb 3.

PMID:
25633130
9.

Gold-free growth of GaAs nanowires on silicon: arrays and polytypism.

Plissard S, Dick KA, Larrieu G, Godey S, Addad A, Wallart X, Caroff P.

Nanotechnology. 2010 Sep 24;21(38):385602. doi: 10.1088/0957-4484/21/38/385602. Epub 2010 Aug 27.

PMID:
20798467
10.

Phase perfection in zinc Blende and Wurtzite III-V nanowires using basic growth parameters.

Joyce HJ, Wong-Leung J, Gao Q, Tan HH, Jagadish C.

Nano Lett. 2010 Mar 10;10(3):908-15. doi: 10.1021/nl903688v.

PMID:
20131909
11.

Fletching-shaped Bi4Te3–ZnTe heterostructure nanowires.

Song MS, Kim Y.

Nanotechnology. 2014 Dec 19;25(50):505605.

PMID:
25431894
12.

Self-catalyzed GaAsP nanowires grown on silicon substrates by solid-source molecular beam epitaxy.

Zhang Y, Aagesen M, Holm JV, Jørgensen HI, Wu J, Liu H.

Nano Lett. 2013 Aug 14;13(8):3897-902. doi: 10.1021/nl401981u. Epub 2013 Aug 2.

PMID:
23899047
13.

Triple-twin domains in Mg doped GaN wurtzite nanowires: structural and electronic properties of this zinc-blende-like stacking.

Arbiol J, Estradé S, Prades JD, Cirera A, Furtmayr F, Stark C, Laufer A, Stutzmann M, Eickhoff M, Gass MH, Bleloch AL, Peiró F, Morante JR.

Nanotechnology. 2009 Apr 8;20(14):145704. doi: 10.1088/0957-4484/20/14/145704. Epub 2009 Mar 18.

PMID:
19420534
14.

Optical response of wurtzite and zinc blende GaP nanowire arrays.

Aghaeipour M, Anttu N, Nylund G, Berg A, Lehmann S, Pistol ME.

Opt Express. 2015 Nov 16;23(23):30177-87. doi: 10.1364/OE.23.030177.

PMID:
26698498
15.

Electronic and structural characteristics of zinc-blende wurtzite biphasic homostructure GaN nanowires.

Jacobs BW, Ayres VM, Petkov MP, Halpern JB, He M, Baczewski AD, McElroy K, Crimp MA, Zhang J, Shaw HC.

Nano Lett. 2007 May;7(5):1435-8. Epub 2007 Apr 7.

PMID:
17417913
16.

Zinc blende GaAsSb nanowires grown by molecular beam epitaxy.

Dheeraj DL, Patriarche G, Largeau L, Zhou HL, van Helvoort AT, Glas F, Harmand JC, Fimland BO, Weman H.

Nanotechnology. 2008 Jul 9;19(27):275605. doi: 10.1088/0957-4484/19/27/275605. Epub 2008 May 28.

PMID:
21828712
17.

Internal structure of multiphase zinc-blende wurtzite gallium nitride nanowires.

Jacobs BW, Ayres VM, Crimp MA, McElroy K.

Nanotechnology. 2008 Oct 8;19(40):405706. doi: 10.1088/0957-4484/19/40/405706. Epub 2008 Aug 26.

PMID:
21832635
18.

New mode of vapor-liquid-solid nanowire growth.

Dubrovskii VG, Cirlin GE, Sibirev NV, Jabeen F, Harmand JC, Werner P.

Nano Lett. 2011 Mar 9;11(3):1247-53. doi: 10.1021/nl104238d. Epub 2011 Feb 23.

PMID:
21344916
19.

Crystal-structure-dependent photoluminescence from InP nanowires.

Mattila M, Hakkarainen T, Mulot M, Lipsanen H.

Nanotechnology. 2006 Mar 28;17(6):1580-3. doi: 10.1088/0957-4484/17/6/008. Epub 2006 Feb 21.

PMID:
26558562
20.

Growth of defect-free GaP nanowires.

Husanu E, Ercolani D, Gemmi M, Sorba L.

Nanotechnology. 2014 May 23;25(20):205601. doi: 10.1088/0957-4484/25/20/205601. Epub 2014 Apr 30.

PMID:
24785358

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