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Items: 1 to 20 of 100

1.

Dynamics of time-resolved photoluminescence in GaInNAs and GaNAsSb solar cells.

Gubanov A, Polojärvi V, Aho A, Tukiainen A, Tkachenko NV, Guina M.

Nanoscale Res Lett. 2014 Feb 17;9(1):80. doi: 10.1186/1556-276X-9-80.

2.

Dilute nitride and GaAs n-i-p-i solar cells.

Mazzucato S, Royall B, Ketlhwaafetse R, Balkan N, Salmi J, Puustinen J, Guina M, Smith A, Gwilliam R.

Nanoscale Res Lett. 2012 Nov 20;7(1):631. doi: 10.1186/1556-276X-7-631.

3.

Photoconductivity and photoluminescence under bias in GaInNAs/GaAs MQW p-i-n structures.

Khalil HM, Royall B, Mazzucato S, Balkan N.

Nanoscale Res Lett. 2012 Sep 28;7(1):539. doi: 10.1186/1556-276X-7-539.

4.

Magnetotransport study on as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs strained quantum well structures.

Dönmez O, Sarcan F, Erol A, Gunes M, Arikan MC, Puustinen J, Guina M.

Nanoscale Res Lett. 2014 Mar 24;9(1):141. doi: 10.1186/1556-276X-9-141.

5.

Dynamics of Optically-Generated Carriers in Si (100) and Si (111) Substrate-Grown GaAs/AlGaAs Core-Shell Nanowires.

Delos Santos R, Ibañes JJ, Balgos MH, Jaculbia R, Afalla JP, Bailon-Somintac M, Estacio E, Salvador A, Somintac A, Que C, Tsuzuki S, Yamamoto K, Tani M.

Nanoscale Res Lett. 2015 Dec;10(1):1050. doi: 10.1186/s11671-015-1050-9. Epub 2015 Aug 21.

6.

Effects of surface passivation on twin-free GaAs nanosheets.

Arab S, Chi CY, Shi T, Wang Y, Dapkus DP, Jackson HE, Smith LM, Cronin SB.

ACS Nano. 2015 Feb 24;9(2):1336-40. doi: 10.1021/nn505227q. Epub 2015 Jan 21.

PMID:
25565000
7.

High responsivity GaNAsSb p-i-n photodetectors at 1.3 microm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxy.

Tan KH, Yoon SF, Loke WK, Wicaksono S, Ng TK, Lew KL, Stöhr A, Fedderwitz S, Weiss M, Jäger D, Saadsaoud N, Dogheche E, Decoster D, Chazelas J.

Opt Express. 2008 May 26;16(11):7720-5.

PMID:
18545482
8.

Effects of rapid thermal annealing on the optical properties of strain-free quantum ring solar cells.

Wu J, Wang ZM, Dorogan VG, Li S, Lee J, Mazur YI, Kim ES, Salamo GJ.

Nanoscale Res Lett. 2013 Jan 2;8(1):5. doi: 10.1186/1556-276X-8-5.

9.
10.

Photoluminescence study of type-II InGaPN/GaAs quantum wells.

Kaewket D, Sanorpim S, Tungasmita S, Katayama R, Onabe K.

J Nanosci Nanotechnol. 2010 Nov;10(11):7154-7.

PMID:
21137886
11.

Ultrafast exciton dynamics and light-driven H2 evolution in colloidal semiconductor nanorods and Pt-tipped nanorods.

Wu K, Zhu H, Lian T.

Acc Chem Res. 2015 Mar 17;48(3):851-9. doi: 10.1021/ar500398g. Epub 2015 Feb 16.

PMID:
25682713
12.

Post-growth annealing effects of Mg doped GaAs epitaxial layers on microstructural and optical properties.

Kim J, Kim MS, Kim DY, Park HJ, Kim JS, Lee DY, Kim JS, Son JS, Ryu HH, Cho GS, Jeon M, Leem JY.

J Nanosci Nanotechnol. 2009 Jul;9(7):4207-10.

PMID:
19916431
13.

The influence of post-growth annealing on the optical properties of InAs quantum dot chains grown on pre-patterned GaAs(100).

Hakkarainen TV, Polojärvi V, Schramm A, Tommila J, Guina M.

Nanotechnology. 2012 Mar 23;23(11):115702. doi: 10.1088/0957-4484/23/11/115702. Epub 2012 Feb 28.

PMID:
22369789
14.

Low density MOVPE grown InGaAs QDs exhibiting ultra-narrow single exciton linewidths.

Richter D, Hafenbrak R, Jöns KD, Schulz WM, Eichfelder M, Heldmaier M, Rossbach R, Jetter M, Michler P.

Nanotechnology. 2010 Mar 26;21(12):125606. doi: 10.1088/0957-4484/21/12/125606. Epub 2010 Mar 5.

PMID:
20203350
15.

Low Temperature Photoluminescence Kinetics of Double-Ring Structured GaAs Quantum Dots.

Myoung S, Mun OM, Yim SY, Kim JS.

J Nanosci Nanotechnol. 2015 Nov;15(11):8684-7.

PMID:
26726575
16.

High-temperature photoluminescence of CdSe/CdS core/shell nanoheterostructures.

Diroll BT, Murray CB.

ACS Nano. 2014 Jun 24;8(6):6466-74. doi: 10.1021/nn5021314. Epub 2014 May 15.

PMID:
24824459
17.

Time-resolved photoluminescence studies of annealed 1.3-μm GaInNAsSb quantum wells.

Baranowski M, Kudrawiec R, Syperek M, Misiewicz J, Sarmiento T, Harris JS.

Nanoscale Res Lett. 2014 Feb 17;9(1):81. doi: 10.1186/1556-276X-9-81.

18.

Carrier trapping and escape times in p-i-n GaInNAs MQW structures.

Khalil HM, Balkan N.

Nanoscale Res Lett. 2014 Jan 13;9(1):21. doi: 10.1186/1556-276X-9-21.

19.

Charge separation in subcells of triple-junction solar cells revealed by time-resolved photoluminescence spectroscopy.

Tex DM, Imaizumi M, Kanemitsu Y.

Opt Express. 2015 Nov 30;23(24):A1687-92. doi: 10.1364/OE.23.0A1687.

PMID:
26698814
20.

Nonlinear dynamics of non-equilibrium holes in p-type modulation-doped GaInNAs/GaAs quantum wells.

Khalil HM, Sun Y, Balkan N, Amann A, Sopanen M.

Nanoscale Res Lett. 2011 Mar 2;6(1):191. doi: 10.1186/1556-276X-6-191.

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