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Items: 1 to 20 of 93

1.

Scalable integration of indium zinc oxide/photosensitive-nanowire composite thin-film transistors for transparent multicolor photodetectors array.

Liu X, Jiang L, Zou X, Xiao X, Guo S, Jiang C, Liu X, Fan Z, Hu W, Chen X, Lu W, Hu W, Liao L.

Adv Mater. 2014 May;26(18):2919-24. doi: 10.1002/adma.201305073. Epub 2014 Feb 14.

PMID:
24532315
2.

Transparent, high-performance thin-film transistors with an InGaZnO/aligned-SnO2 -nanowire composite and their application in photodetectors.

Liu X, Liu X, Wang J, Liao C, Xiao X, Guo S, Jiang C, Fan Z, Wang T, Chen X, Lu W, Hu W, Liao L.

Adv Mater. 2014 Nov 19;26(43):7399-404. doi: 10.1002/adma.201401732. Epub 2014 Sep 18.

PMID:
25236580
3.

Transparent metal oxide nanowire transistors.

Chen D, Liu Z, Liang B, Wang X, Shen G.

Nanoscale. 2012 May 21;4(10):3001-12. doi: 10.1039/c2nr30445g. Epub 2012 Apr 12. Review.

PMID:
22495655
4.

High-performance single-crystalline arsenic-doped indium oxide nanowires for transparent thin-film transistors and active matrix organic light-emitting diode displays.

Chen PC, Shen G, Chen H, Ha YG, Wu C, Sukcharoenchoke S, Fu Y, Liu J, Facchetti A, Marks TJ, Thompson ME, Zhou C.

ACS Nano. 2009 Nov 24;3(11):3383-90. doi: 10.1021/nn900704c.

PMID:
19842677
5.

Optically transparent thin-film transistors based on 2D multilayer MoS₂ and indium zinc oxide electrodes.

Kwon J, Hong YK, Kwon HJ, Park YJ, Yoo B, Kim J, Grigoropoulos CP, Oh MS, Kim S.

Nanotechnology. 2015 Jan 21;26(3):035202. doi: 10.1088/0957-4484/26/3/035202. Epub 2014 Dec 30.

PMID:
25548952
6.

All-amorphous-oxide transparent, flexible thin-film transistors. Efficacy of bilayer gate dielectrics.

Liu J, Buchholz DB, Hennek JW, Chang RP, Facchetti A, Marks TJ.

J Am Chem Soc. 2010 Sep 1;132(34):11934-42. doi: 10.1021/ja9103155.

PMID:
20698566
7.

Effective indium-doped zinc oxide buffer layer on silver nanowires for electrically highly stable, flexible, transparent, and conductive composite electrodes.

Lee HJ, Hwang JH, Choi KB, Jung SG, Kim KN, Shim YS, Park CH, Park YW, Ju BK.

ACS Appl Mater Interfaces. 2013 Nov 13;5(21):10397-403. doi: 10.1021/am4025802. Epub 2013 Oct 28.

PMID:
24088674
8.

Effects of solution temperature on solution-processed high-performance metal oxide thin-film transistors.

Lee KH, Park JH, Yoo YB, Jang WS, Oh JY, Chae SS, Moon KJ, Myoung JM, Baik HK.

ACS Appl Mater Interfaces. 2013 Apr 10;5(7):2585-92. doi: 10.1021/am3032629. Epub 2013 Mar 19.

PMID:
23461268
9.

Rational design of amorphous indium zinc oxide/carbon nanotube hybrid film for unique performance transistors.

Liu X, Wang C, Cai B, Xiao X, Guo S, Fan Z, Li J, Duan X, Liao L.

Nano Lett. 2012 Jul 11;12(7):3596-601. doi: 10.1021/nl3012648. Epub 2012 Jun 15.

PMID:
22694726
10.

Monolithic metal oxide transistors.

Choi Y, Park WY, Kang MS, Yi GR, Lee JY, Kim YH, Cho JH.

ACS Nano. 2015 Apr 28;9(4):4288-95. doi: 10.1021/acsnano.5b00700. Epub 2015 Mar 20.

PMID:
25777338
11.

Zinc oxide nanowire photodetectors with single-walled carbon nanotube thin-film electrodes.

Ates ES, Kucukyildiz S, Unalan HE.

ACS Appl Mater Interfaces. 2012 Oct 24;4(10):5142-6. doi: 10.1021/am301402y. Epub 2012 Sep 18.

PMID:
22950714
12.

Highly effective field-effect mobility amorphous InGaZnO TFT mediated by directional silver nanowire arrays.

Liu HC, Lai YC, Lai CC, Wu BS, Zan HW, Yu P, Chueh YL, Tsai CC.

ACS Appl Mater Interfaces. 2015 Jan 14;7(1):232-40. doi: 10.1021/am5059316. Epub 2014 Dec 26.

PMID:
25485556
13.

Improved electrical performance and bias stability of solution-processed active bilayer structure of indium zinc oxide based TFT.

Seo JS, Bae BS.

ACS Appl Mater Interfaces. 2014 Sep 10;6(17):15335-43. doi: 10.1021/am5037934. Epub 2014 Aug 20.

PMID:
25116128
14.
15.

Damage-free back channel wet-etch process in amorphous indium-zinc-oxide thin-film transistors using a carbon-nanofilm barrier layer.

Luo D, Zhao M, Xu M, Li M, Chen Z, Wang L, Zou J, Tao H, Wang L, Peng J.

ACS Appl Mater Interfaces. 2014 Jul 23;6(14):11318-25. doi: 10.1021/am501817y. Epub 2014 Jul 9.

PMID:
24969359
16.

Density of states-based design of metal oxide thin-film transistors for high mobility and superior photostability.

Kim HS, Park JS, Jeong HK, Son KS, Kim TS, Seon JB, Lee E, Chung JG, Kim DH, Ryu M, Lee SY.

ACS Appl Mater Interfaces. 2012 Oct 24;4(10):5416-21. doi: 10.1021/am301342x. Epub 2012 Sep 19.

PMID:
22957907
17.

Solution-processable LaZrOx/SiO2 gate dielectric at low temperature of 180 °C for high-performance metal oxide field-effect transistors.

Je SY, Son BG, Kim HG, Park MY, Do LM, Choi R, Jeong JK.

ACS Appl Mater Interfaces. 2014 Nov 12;6(21):18693-703. doi: 10.1021/am504231h. Epub 2014 Oct 14.

PMID:
25285585
18.

Solution processed zinc oxide nanopyramid/silver nanowire transparent network films with highly tunable light scattering properties.

Mehra S, Christoforo MG, Peumans P, Salleo A.

Nanoscale. 2013 May 21;5(10):4400-3. doi: 10.1039/c3nr00863k.

PMID:
23575765
19.

Solution processable broadband transparent mixed metal oxide nanofilm optical coatings via substrate diffusion doping.

Glynn C, Aureau D, Collins G, O'Hanlon S, Etcheberry A, O'Dwyer C.

Nanoscale. 2015 Dec 21;7(47):20227-37. doi: 10.1039/c5nr06184a. Epub 2015 Nov 17.

PMID:
26575987
20.

Highly stable transparent amorphous oxide semiconductor thin-film transistors having double-stacked active layers.

Park JC, Kim S, Kim S, Kim C, Song I, Park Y, Jung UI, Kim DH, Lee JS.

Adv Mater. 2010 Dec 21;22(48):5512-6. doi: 10.1002/adma.201002397. No abstract available.

PMID:
20972978

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