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Items: 1 to 20 of 245

1.

Nanocrystalline cellulose applied simultaneously as the gate dielectric and the substrate in flexible field effect transistors.

Gaspar D, Fernandes SN, de Oliveira AG, Fernandes JG, Grey P, Pontes RV, Pereira L, Martins R, Godinho MH, Fortunato E.

Nanotechnology. 2014 Mar 7;25(9):094008. doi: 10.1088/0957-4484/25/9/094008.

PMID:
24522012
2.
3.

Solution processable multi-channel ZnO nanowire field-effect transistors with organic gate dielectric.

Opoku C, Hoettges KF, Hughes MP, Stolojan V, Silva SR, Shkunov M.

Nanotechnology. 2013 Oct 11;24(40):405203. doi: 10.1088/0957-4484/24/40/405203.

PMID:
24029562
4.

Highly transparent and flexible nanopaper transistors.

Huang J, Zhu H, Chen Y, Preston C, Rohrbach K, Cumings J, Hu L.

ACS Nano. 2013 Mar 26;7(3):2106-13. doi: 10.1021/nn304407r.

PMID:
23350951
5.

Fabrication of high performance/highly functional field-effect transistor devices based on [6]phenacene thin films.

Eguchi R, He X, Hamao S, Goto H, Okamoto H, Gohda S, Sato K, Kubozono Y.

Phys Chem Chem Phys. 2013 Dec 21;15(47):20611-7. doi: 10.1039/c3cp53598c.

PMID:
24185947
6.

n-Channel semiconductor materials design for organic complementary circuits.

Usta H, Facchetti A, Marks TJ.

Acc Chem Res. 2011 Jul 19;44(7):501-10. doi: 10.1021/ar200006r.

PMID:
21615105
7.

Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric.

Liu A, Liu GX, Zhu HH, Xu F, Fortunato E, Martins R, Shan FK.

ACS Appl Mater Interfaces. 2014 Oct 22;6(20):17364-9. doi: 10.1021/am505602w.

PMID:
25285983
8.

Low operating voltage single ZnO nanowire field-effect transistors enabled by self-assembled organic gate nanodielectrics.

Ju S, Lee K, Janes DB, Yoon MH, Facchetti A, Marks TJ.

Nano Lett. 2005 Nov;5(11):2281-6.

PMID:
16277468
9.
10.

All-amorphous-oxide transparent, flexible thin-film transistors. Efficacy of bilayer gate dielectrics.

Liu J, Buchholz DB, Hennek JW, Chang RP, Facchetti A, Marks TJ.

J Am Chem Soc. 2010 Sep 1;132(34):11934-42. doi: 10.1021/ja9103155.

PMID:
20698566
11.

The influence of fibril composition and dimension on the performance of paper gated oxide transistors.

Pereira L, Gaspar D, Guerin D, Delattre A, Fortunato E, Martins R.

Nanotechnology. 2014 Mar 7;25(9):094007. doi: 10.1088/0957-4484/25/9/094007.

PMID:
24521999
12.

High mobility flexible graphene field-effect transistors with self-healing gate dielectrics.

Lu CC, Lin YC, Yeh CH, Huang JC, Chiu PW.

ACS Nano. 2012 May 22;6(5):4469-74. doi: 10.1021/nn301199j.

PMID:
22501029
13.

Thin film transistors for flexible electronics: contacts, dielectrics and semiconductors.

Quevedo-Lopez MA, Wondmagegn WT, Alshareef HN, Ramirez-Bon R, Gnade BE.

J Nanosci Nanotechnol. 2011 Jun;11(6):5532-8.

PMID:
21770215
14.

A flexible amorphous Bi(5)Nb(3)O(15) film for the gate insulator of the low-voltage operating pentacene thin-film transistor fabricated at room temperature.

Cho KH, Seong TG, Choi JY, Kim JS, Kwon JH, Shin SI, Chung MH, Ju BK, Nahm S.

Langmuir. 2009 Oct 20;25(20):12349-54. doi: 10.1021/la9016504.

PMID:
19624140
15.

High-mobility transparent thin-film transistors with an Sb-doped SnO2 nanocrystal channel fabricated at room temperature.

Sun J, Lu A, Wang L, Hu Y, Wan Q.

Nanotechnology. 2009 Aug 19;20(33):335204. doi: 10.1088/0957-4484/20/33/335204.

PMID:
19636097
16.

Fabrication of solution-processed InSnZnO/ZrO2 thin film transistors.

Hwang SM, Lee SM, Choi JH, Lim JH, Joo J.

J Nanosci Nanotechnol. 2013 Nov;13(11):7774-8.

PMID:
24245332
17.

Stable low-voltage operation top-gate organic field-effect transistors on cellulose nanocrystal substrates.

Wang CY, Fuentes-Hernandez C, Liu JC, Dindar A, Choi S, Youngblood JP, Moon RJ, Kippelen B.

ACS Appl Mater Interfaces. 2015 Mar 4;7(8):4804-8. doi: 10.1021/am508723a.

PMID:
25651811
18.

High-performance transparent inorganic-organic hybrid thin-film n-type transistors.

Wang L, Yoon MH, Lu G, Yang Y, Facchetti A, Marks TJ.

Nat Mater. 2006 Nov;5(11):893-900. Erratum in: Nat Mater. 2007 Apr;6(4):317.

PMID:
17041583
19.

Solution-processable LaZrOx/SiO2 gate dielectric at low temperature of 180 °C for high-performance metal oxide field-effect transistors.

Je SY, Son BG, Kim HG, Park MY, Do LM, Choi R, Jeong JK.

ACS Appl Mater Interfaces. 2014 Nov 12;6(21):18693-703. doi: 10.1021/am504231h.

PMID:
25285585
20.

Monolithic metal oxide transistors.

Choi Y, Park WY, Kang MS, Yi GR, Lee JY, Kim YH, Cho JH.

ACS Nano. 2015 Apr 28;9(4):4288-95. doi: 10.1021/acsnano.5b00700.

PMID:
25777338
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