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Items: 1 to 20 of 201

1.

Electroluminescence from metal-insulator-semiconductor tunneling diodes using compressively strained Ge on Si0.5Ge0.5 virtual substrates.

Manna S, Aluguri R, Das S, Singha R, Ray SK.

Opt Express. 2013 Nov 18;21(23):28219-31. doi: 10.1364/OE.21.028219.

PMID:
24514333
2.

Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films.

Katiyar AK, Grimm A, Bar R, Schmidt J, Wietler T, Osten HJ, Ray SK.

Nanotechnology. 2016 Sep 23;27(43):435204. [Epub ahead of print]

PMID:
27659285
3.

Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes.

Sun X, Liu J, Kimerling LC, Michel J.

Opt Lett. 2009 Apr 15;34(8):1198-200.

PMID:
19370116
4.

Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1- x(001) and SixGe1- x(110).

Edmonds M, Sardashti K, Wolf S, Chagarov E, Clemons M, Kent T, Park JH, Tang K, McIntyre PC, Yoshida N, Dong L, Holmes R, Alvarez D, Kummel AC.

J Chem Phys. 2017 Feb 7;146(5):052820. doi: 10.1063/1.4975081.

PMID:
28178835
5.

Electroluminescence of GeSn/Ge MQW LEDs on Si substrate.

Schwartz B, Oehme M, Kostecki K, Widmann D, Gollhofer M, Koerner R, Bechler S, Fischer IA, Wendav T, Kasper E, Schulze J, Kittler M.

Opt Lett. 2015 Jul 1;40(13):3209-12. doi: 10.1364/OL.40.003209.

PMID:
26125404
6.

Tensile-strained Ge/SiGe quantum-well photodetectors on silicon substrates with extended infrared response.

Chang GE, Chen SW, Cheng HH.

Opt Express. 2016 Aug 8;24(16):17562-71. doi: 10.1364/OE.24.017562.

PMID:
27505727
7.

Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices.

Clavel M, Saladukha D, Goley PS, Ochalski TJ, Murphy-Armando F, Bodnar RJ, Hudait MK.

ACS Appl Mater Interfaces. 2015 Dec 9;7(48):26470-81. doi: 10.1021/acsami.5b07385. Epub 2015 Nov 23.

PMID:
26561963
8.

Selective Etching of Silicon in Preference to Germanium and Si0.5Ge0.5.

Ahles CF, Choi JY, Wolf S, Kummel AC.

ACS Appl Mater Interfaces. 2017 Jun 21;9(24):20947-20954. doi: 10.1021/acsami.7b02060. Epub 2017 Jun 7.

PMID:
28537704
9.

Direct-gap optical gain of Ge on Si at room temperature.

Liu J, Sun X, Kimerling LC, Michel J.

Opt Lett. 2009 Jun 1;34(11):1738-40.

PMID:
19488166
11.

Composition-dependent band gaps and indirect-direct band gap transitions of group-IV semiconductor alloys.

Zhu Z, Xiao J, Sun H, Hu Y, Cao R, Wang Y, Zhao L, Zhuang J.

Phys Chem Chem Phys. 2015 Sep 7;17(33):21605-10. doi: 10.1039/c5cp02558c. Epub 2015 Jul 29.

PMID:
26222374
12.

Strain and Hole Gas Induced Raman Shifts in Ge-Si(x)Ge(1-x) Core-Shell Nanowires Using Tip-Enhanced Raman Spectroscopy.

Zhang Z, Dillen DC, Tutuc E, Yu ET.

Nano Lett. 2015 Jul 8;15(7):4303-10. doi: 10.1021/acs.nanolett.5b00176. Epub 2015 Jun 9.

PMID:
26053999
13.

Ge-rich SiGe-on-insulator for waveguide optical modulator application fabricated by Ge condensation and SiGe regrowth.

Kim Y, Yokoyama M, Taoka N, Takenaka M, Takagi S.

Opt Express. 2013 Aug 26;21(17):19615-23. doi: 10.1364/OE.21.019615.

PMID:
24105508
14.

Quantum-confined direct band transitions in tensile strained Ge/SiGe quantum wells on silicon substrates.

Chen Y, Li C, Lai H, Chen S.

Nanotechnology. 2010 Mar 19;21(11):115207. doi: 10.1088/0957-4484/21/11/115207. Epub 2010 Feb 24.

PMID:
20179329
15.

Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X-ray Nanodiffraction.

Richard MI, Zoellner MH, Chahine GA, Zaumseil P, Capellini G, Häberlen M, Storck P, Schülli TU, Schroeder T.

ACS Appl Mater Interfaces. 2015 Dec 9;7(48):26696-700. doi: 10.1021/acsami.5b08645. Epub 2015 Nov 30.

PMID:
26541318
16.

Emission characteristics of self-assembled strained Ge1-xSnx islands for sources in the optical communication region.

Bar R, Katiyar AK, Aluguri R, Ray SK.

Nanotechnology. 2017 Jul 21;28(29):295201. doi: 10.1088/1361-6528/aa715e. Epub 2017 May 5.

PMID:
28475108
17.

Ge-on-Si laser operating at room temperature.

Liu J, Sun X, Camacho-Aguilera R, Kimerling LC, Michel J.

Opt Lett. 2010 Mar 1;35(5):679-81. doi: 10.1364/OL.35.000679.

PMID:
20195317
18.

Tight-binding calculation of optical gain in tensile strained [001]-Ge/SiGe quantum wells.

Pizzi G, Virgilio M, Grosso G.

Nanotechnology. 2010 Feb 5;21(5):055202. doi: 10.1088/0957-4484/21/5/055202. Epub 2009 Dec 21.

PMID:
20023310
19.

Formation of atomically ordered and chemically selective Si-O-Ti monolayer on Si0.5Ge0.5(110) for a MIS structure via H2O2(g) functionalization.

Park SW, Choi JY, Siddiqui S, Sahu B, Galatage R, Yoshida N, Kachian J, Kummel AC.

J Chem Phys. 2017 Feb 7;146(5):052808. doi: 10.1063/1.4966690.

PMID:
28178814
20.

Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress.

Liu Y, Niu J, Wang H, Han G, Zhang C, Feng Q, Zhang J, Hao Y.

Nanoscale Res Lett. 2017 Dec;12(1):120. doi: 10.1186/s11671-017-1913-3. Epub 2017 Feb 16.

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