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Items: 1 to 20 of 118

1.

Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling.

Tongay S, Sahin H, Ko C, Luce A, Fan W, Liu K, Zhou J, Huang YS, Ho CH, Yan J, Ogletree DF, Aloni S, Ji J, Li S, Li J, Peeters FM, Wu J.

Nat Commun. 2014;5:3252. doi: 10.1038/ncomms4252.

PMID:
24500082
2.

Coupling and Stacking Order of ReS2 Atomic Layers Revealed by Ultralow-Frequency Raman Spectroscopy.

He R, Yan JA, Yin Z, Ye Z, Ye G, Cheng J, Li J, Lui CH.

Nano Lett. 2016 Feb 10;16(2):1404-9. doi: 10.1021/acs.nanolett.5b04925. Epub 2016 Jan 14.

PMID:
26757027
3.

Robust magnetic domains in fluorinated ReS2₂monolayer.

Loh GC, Pandey R.

Phys Chem Chem Phys. 2015 Jul 28;17(28):18843-53. doi: 10.1039/c5cp02593a.

PMID:
26125204
4.

Disorder engineering and conductivity dome in ReS2 with electrolyte gating.

Ovchinnikov D, Gargiulo F, Allain A, Pasquier DJ, Dumcenco D, Ho CH, Yazyev OV, Kis A.

Nat Commun. 2016 Aug 8;7:12391. doi: 10.1038/ncomms12391.

5.

Sulfur vacancy activated field effect transistors based on ReS2 nanosheets.

Xu K, Deng HX, Wang Z, Huang Y, Wang F, Li SS, Luo JW, He J.

Nanoscale. 2015 Oct 14;7(38):15757-62. doi: 10.1039/c5nr04625d. Epub 2015 Sep 9.

PMID:
26352273
6.

Doping of rhenium disulfide monolayers: a systematic first principles study.

Çakır D, Sahin H, Peeters FM.

Phys Chem Chem Phys. 2014 Aug 21;16(31):16771-9. doi: 10.1039/c4cp02007c.

PMID:
25001566
7.

Splitting of Interlayer Shear Modes and Photon Energy Dependent Anisotropic Raman Response in N-Layer ReSe₂ and ReS₂.

Lorchat E, Froehlicher G, Berciaud S.

ACS Nano. 2016 Feb 23;10(2):2752-60. doi: 10.1021/acsnano.5b07844. Epub 2016 Feb 3.

PMID:
26820232
8.

Electronic bandstructure and van der Waals coupling of ReSe2 revealed by high-resolution angle-resolved photoemission spectroscopy.

Hart LS, Webb JL, Dale S, Bending SJ, Mucha-Kruczynski M, Wolverson D, Chen C, Avila J, Asensio MC.

Sci Rep. 2017 Jul 11;7(1):5145. doi: 10.1038/s41598-017-05361-6.

9.

Raman spectra of monolayer, few-layer, and bulk ReSe₂: an anisotropic layered semiconductor.

Wolverson D, Crampin S, Kazemi AS, Ilie A, Bending SJ.

ACS Nano. 2014 Nov 25;8(11):11154-64. doi: 10.1021/nn5053926. Epub 2014 Nov 5.

PMID:
25365239
10.

Polytypism and unexpected strong interlayer coupling in two-dimensional layered ReS2.

Qiao XF, Wu JB, Zhou L, Qiao J, Shi W, Chen T, Zhang X, Zhang J, Ji W, Tan PH.

Nanoscale. 2016 Apr 21;8(15):8324-32. doi: 10.1039/c6nr01569g.

PMID:
27035503
11.

Metal to Insulator Quantum-Phase Transition in Few-Layered ReS₂.

Pradhan NR, McCreary A, Rhodes D, Lu Z, Feng S, Manousakis E, Smirnov D, Namburu R, Dubey M, Walker AR, Terrones H, Terrones M, Dobrosavljevic V, Balicas L.

Nano Lett. 2015 Dec 9;15(12):8377-84. doi: 10.1021/acs.nanolett.5b04100. Epub 2015 Nov 30.

PMID:
26599563
12.

Robust Direct Bandgap Characteristics of One- and Two-Dimensional ReS2.

Yu ZG, Cai Y, Zhang YW.

Sci Rep. 2015 Sep 8;5:13783. doi: 10.1038/srep13783.

13.

Anisotropic Spectroscopy and Electrical Properties of 2D ReS2(1-x) Se2x Alloys with Distorted 1T Structure.

Wen W, Zhu Y, Liu X, Hsu HP, Fei Z, Chen Y, Wang X, Zhang M, Lin KH, Huang FS, Wang YP, Huang YS, Ho CH, Tan PH, Jin C, Xie L.

Small. 2017 Mar;13(12). doi: 10.1002/smll.201603788. Epub 2017 Jan 23.

PMID:
28112865
14.

Nonlinear Saturable and Polarization-induced Absorption of Rhenium Disulfide.

Cui Y, Lu F, Liu X.

Sci Rep. 2017 Jan 5;7:40080. doi: 10.1038/srep40080.

15.

Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide.

Nayak AP, Bhattacharyya S, Zhu J, Liu J, Wu X, Pandey T, Jin C, Singh AK, Akinwande D, Lin JF.

Nat Commun. 2014 May 7;5:3731. doi: 10.1038/ncomms4731.

PMID:
24806118
16.

Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material.

Zhang X, Qiao XF, Shi W, Wu JB, Jiang DS, Tan PH.

Chem Soc Rev. 2015 May 7;44(9):2757-85. doi: 10.1039/c4cs00282b. Epub 2015 Feb 13.

PMID:
25679474
17.

Influence of transition metal doping on the electronic and optical properties of ReS2 and ReSe2 monolayers.

Obodo KO, Ouma CNM, Obodo JT, Braun M.

Phys Chem Chem Phys. 2017 Jul 12. doi: 10.1039/c7cp03455e. [Epub ahead of print]

PMID:
28702562
18.

Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors.

Liu E, Fu Y, Wang Y, Feng Y, Liu H, Wan X, Zhou W, Wang B, Shao L, Ho CH, Huang YS, Cao Z, Wang L, Li A, Zeng J, Song F, Wang X, Shi Y, Yuan H, Hwang HY, Cui Y, Miao F, Xing D.

Nat Commun. 2015 May 7;6:6991. doi: 10.1038/ncomms7991.

19.

Tailoring the electronic structure in bilayer molybdenum disulfide via interlayer twist.

van der Zande AM, Kunstmann J, Chernikov A, Chenet DA, You Y, Zhang X, Huang PY, Berkelbach TC, Wang L, Zhang F, Hybertsen MS, Muller DA, Reichman DR, Heinz TF, Hone JC.

Nano Lett. 2014 Jul 9;14(7):3869-75. doi: 10.1021/nl501077m. Epub 2014 Jun 19.

PMID:
24933687
20.

Optoelectronic properties of atomically thin ReSSe with weak interlayer coupling.

Liu F, Zheng S, Chaturvedi A, Zólyomi V, Zhou J, Fu Q, Zhu C, Yu P, Zeng Q, Drummond ND, Fan HJ, Kloc C, Fal'ko VI, He X, Liu Z.

Nanoscale. 2016 Mar 21;8(11):5826-34. doi: 10.1039/c5nr08440g.

PMID:
26927684

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