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Items: 1 to 20 of 99

1.

Giant up-conversion efficiency of InGaAs quantum dots in a planar microcavity.

Xu Q, Piermarocchi C, Pershin YV, Salamo GJ, Xiao M, Wang X, Shih CK.

Sci Rep. 2014 Feb 4;4:3953. doi: 10.1038/srep03953.

2.

Photoluminescence intermittency of InGaAs/GaAs quantum dots confined in a planar microcavity.

Wang XY, Ma WQ, Zhang JY, Salamo GJ, Xiao M, Shih CK.

Nano Lett. 2005 Oct;5(10):1873-7.

PMID:
16218701
3.

InGaAs quantum dots grown by molecular beam epitaxy for light emission on Si substrates.

Bru-Chevallier C, El Akra A, Pelloux-Gervais D, Dumont H, Canut B, Chauvin N, Regreny P, Gendry M, Patriarche G, Jancu JM, Even J, Noe P, Calvo V, Salem B.

J Nanosci Nanotechnol. 2011 Oct;11(10):9153-9.

PMID:
22400316
4.

Telecommunication Wavelength-Band Single-Photon Emission from Single Large InAs Quantum Dots Nucleated on Low-Density Seed Quantum Dots.

Chen ZS, Ma B, Shang XJ, He Y, Zhang LC, Ni HQ, Wang JL, Niu ZC.

Nanoscale Res Lett. 2016 Dec;11(1):382. doi: 10.1186/s11671-016-1597-0. Epub 2016 Aug 30.

5.

Mechanism of photoluminescence quenching of InGaAs/GaAs quantum dots resulting from nanoprobe indentation.

Xu L, Arai Y, Ozasa K, Kakoi H, Liang YH, Araki W.

J Nanosci Nanotechnol. 2011 Jan;11(1):106-14.

PMID:
21446413
6.

Thermal stability of photoluminescence in Cu-doped Zn-In-S quantum dots for light-emitting diodes.

Yuan X, Ma R, Hua J, Liu Y, Li J, Zhang W, Zhao J, Li H.

Phys Chem Chem Phys. 2016 Apr 28;18(16):10976-82. doi: 10.1039/c6cp00240d.

PMID:
27043791
7.

Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well.

Tatebayashi J, Liang BL, Laghumavarapu RB, Bussian DA, Htoon H, Klimov V, Balakrishnan G, Dawson LR, Huffaker DL.

Nanotechnology. 2008 Jul 23;19(29):295704. doi: 10.1088/0957-4484/19/29/295704. Epub 2008 Jun 10.

PMID:
21730609
8.

Improved photoluminescence efficiency of patterned quantum dots incorporating a dots-in-the-well structure.

Wong PS, Liang BL, Dorogan VG, Albrecht AR, Tatebayashi J, He X, Nuntawong N, Mazur YI, Salamo GJ, Brueck SR, Huffaker DL.

Nanotechnology. 2008 Oct 29;19(43):435710. doi: 10.1088/0957-4484/19/43/435710. Epub 2008 Sep 22.

PMID:
21832714
9.

Optical properties of as-grown and annealed InAs quantum dots on InGaAs cross-hatch patterns.

Himwas C, Panyakeow S, Kanjanachuchai S.

Nanoscale Res Lett. 2011 Aug 17;6(1):496. doi: 10.1186/1556-276X-6-496.

10.

Defect-induced photoluminescence blinking of single epitaxial InGaAs quantum dots.

Hu F, Cao Z, Zhang C, Wang X, Xiao M.

Sci Rep. 2015 Mar 10;5:8898. doi: 10.1038/srep08898.

11.

Exciton-phonon scattering and nonradiative relaxation of excited carriers in hydrothermally synthesized CdTe quantum dots.

Jagtap AM, Khatei J, Koteswara Rao KS.

Phys Chem Chem Phys. 2015 Nov 7;17(41):27579-87. doi: 10.1039/c5cp04654h.

PMID:
26426345
12.

Phonon-mediated coupling of InGaAs/GaAs quantum-dot excitons to photonic crystal cavities.

Calic M, Gallo P, Felici M, Atlasov KA, Dwir B, Rudra A, Biasiol G, Sorba L, Tarel G, Savona V, Kapon E.

Phys Rev Lett. 2011 Jun 3;106(22):227402. Epub 2011 Jun 1.

PMID:
21702633
13.

Argon-plasma-induced InAs/InGaAs/InP quantum dot intermixing.

Yin Z, Tang X, Lee CW, Zhao J, Deny S, Chin MK.

Nanotechnology. 2006 Sep 28;17(18):4664-7. doi: 10.1088/0957-4484/17/18/023. Epub 2006 Aug 30.

PMID:
21727594
14.

Silicon Quantum Dots in Dielectric Scattering Media: Broadband Enhancement of Effective Absorption Cross Section by Light Trapping.

Sugimoto H, Ozaki Y, Fujii M.

ACS Appl Mater Interfaces. 2017 Jun 7;9(22):19135-19142. doi: 10.1021/acsami.7b04292. Epub 2017 May 24.

PMID:
28513134
15.

In/Ga inter-diffusion in InAs quantum dot in InGaAs/GaAs asymmetric quantum well.

Abdellatif MH, Song JD, Choi WJ, Cho NK.

J Nanosci Nanotechnol. 2012 Jul;12(7):5774-7.

PMID:
22966652
16.

Long-wavelength emission InAs quantum dots grown on InGaAs metamorphic buffers.

Wu BP, Wu DH, Xiong YH, Huang SS, Ni HQ, Xu YQ, Niu ZC.

J Nanosci Nanotechnol. 2009 Feb;9(2):1333-6.

PMID:
19441518
17.

Surface plasmon-quantum dot coupling from arrays of nanoholes.

Brolo AG, Kwok SC, Cooper MD, Moffitt MG, Wang CW, Gordon R, Riordon J, Kavanagh KL.

J Phys Chem B. 2006 Apr 27;110(16):8307-13.

PMID:
16623513
18.

Subsecond luminescence intensity fluctuations of single CdSe quantum dots.

Biju V, Makita Y, Nagase T, Yamaoka Y, Yokoyama H, Baba Y, Ishikawa M.

J Phys Chem B. 2005 Aug 4;109(30):14350-5.

PMID:
16852805
19.

Excitation Energy Dependence of the Photoluminescence Quantum Yields of Core and Core/Shell Quantum Dots.

Hoy J, Morrison PJ, Steinberg LK, Buhro WE, Loomis RA.

J Phys Chem Lett. 2013 Jun 20;4(12):2053-60. doi: 10.1021/jz4004735. Epub 2013 Jun 6.

PMID:
26283252
20.

InAs quantum dots on nanopatterned GaAs (001) surface: the growth, optical properties, and device implementation.

Wong PS, Liang B, Huffaker DL.

J Nanosci Nanotechnol. 2010 Mar;10(3):1537-50.

PMID:
20355542

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