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Items: 1 to 20 of 104

1.

Correlation of microphotoluminescence spectroscopy, scanning transmission electron microscopy, and atom probe tomography on a single nano-object containing an InGaN/GaN multiquantum well system.

Rigutti L, Blum I, Shinde D, Hernández-Maldonado D, Lefebvre W, Houard J, Vurpillot F, Vella A, Tchernycheva M, Durand C, Eymery J, Deconihout B.

Nano Lett. 2014 Jan 8;14(1):107-14. doi: 10.1021/nl4034768. Epub 2013 Dec 18.

PMID:
24397602
2.

Single excitons in InGaN quantum dots on GaN pyramid arrays.

Hsu CW, Lundskog A, Karlsson KF, Forsberg U, Janzén E, Holtz PO.

Nano Lett. 2011 Jun 8;11(6):2415-8. doi: 10.1021/nl200810v. Epub 2011 Apr 28.

PMID:
21526837
3.

Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array.

Riley JR, Padalkar S, Li Q, Lu P, Koleske DD, Wierer JJ, Wang GT, Lauhon LJ.

Nano Lett. 2013 Sep 11;13(9):4317-25. doi: 10.1021/nl4021045. Epub 2013 Aug 12.

PMID:
23919559
4.

M-plane core-shell InGaN/GaN multiple-quantum-wells on GaN wires for electroluminescent devices.

Koester R, Hwang JS, Salomon D, Chen X, Bougerol C, Barnes JP, Dang Dle S, Rigutti L, de Luna Bugallo A, Jacopin G, Tchernycheva M, Durand C, Eymery J.

Nano Lett. 2011 Nov 9;11(11):4839-45. doi: 10.1021/nl202686n. Epub 2011 Oct 11.

PMID:
21967509
5.

InGaN/GaN multiple quantum wells grown on nonpolar facets of vertical GaN nanorod arrays.

Yeh TW, Lin YT, Stewart LS, Dapkus PD, Sarkissian R, O'Brien JD, Ahn B, Nutt SR.

Nano Lett. 2012 Jun 13;12(6):3257-62. doi: 10.1021/nl301307a. Epub 2012 May 24.

PMID:
22587013
6.

[Raman spectra and photoluminescence spectra of InGaN/GaN multiquantum wells annealed].

Lü GW, Tang YJ, Li WH, Li ZL, Zhang GY, Du WM.

Guang Pu Xue Yu Guang Pu Fen Xi. 2005 Jan;25(1):39-43. Chinese.

PMID:
15852814
7.

The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem.

Humphreys CJ, Griffiths JT, Tang F, Oehler F, Findlay SD, Zheng C, Etheridge J, Martin TL, Bagot PAJ, Moody MP, Sutherland D, Dawson P, Schulz S, Zhang S, Fu WY, Zhu T, Kappers MJ, Oliver RA.

Ultramicroscopy. 2017 May;176:93-98. doi: 10.1016/j.ultramic.2017.01.019. Epub 2017 Feb 3.

8.

Multi-wavelength emitting InGan/GaN quantum well grown on V-shaped gan(1101) microfacet.

Kang ES, Ju JW, Kim JS, Ahn HK, Lee JK, Kim JH, Shin DC, Lee IH.

J Nanosci Nanotechnol. 2007 Nov;7(11):4053-6.

PMID:
18047117
9.

Composition fluctuation of in and well-width fluctuation in InGaN/GaN multiple quantum wells in light-emitting diode devices.

Gu GH, Jang DH, Nam KB, Park CG.

Microsc Microanal. 2013 Aug;19 Suppl 5:99-104. doi: 10.1017/S1431927613012427.

PMID:
23920184
10.

Indium-rich InGaN epitaxial layers grown pseudomorphically on a nano-sculpted InGaN template.

Xue JJ, Chen DJ, Liu B, Lu H, Zhang R, Zheng YD, Cui B, Wowchak AM, Dabiran AM, Xu K, Zhang JP.

Opt Express. 2012 Mar 26;20(7):8093-9. doi: 10.1364/OE.20.008093.

PMID:
22453480
11.

Structural and optical properties of disc-in-wire InGaN/GaN LEDs.

Yan L, Jahangir S, Wight SA, Nikoobakht B, Bhattacharya P, Millunchick JM.

Nano Lett. 2015 Mar 11;15(3):1535-9. doi: 10.1021/nl503826k. Epub 2015 Feb 11.

PMID:
25658444
12.

Three-dimensional chemical imaging of embedded nanoparticles using atom probe tomography.

Kuchibhatla SV, Shutthanandan V, Prosa TJ, Adusumilli P, Arey B, Buxbaum A, Wang YC, Tessner T, Ulfig R, Wang CM, Thevuthasan S.

Nanotechnology. 2012 Jun 1;23(21):215704. doi: 10.1088/0957-4484/23/21/215704. Epub 2012 May 3.

PMID:
22551877
13.

Strong green photoluminescence from InxGa1-xN/GaN nanorod arrays.

Hong CC, Ahn H, Wu CY, Gwo S.

Opt Express. 2009 Sep 28;17(20):17227-33. doi: 10.1364/OE.17.017227.

PMID:
19907509
14.

A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells.

Park H, Baik KH, Kim J, Ren F, Pearton SJ.

Opt Express. 2013 May 20;21(10):12908-13. doi: 10.1364/OE.21.012908.

PMID:
23736510
15.

Surface-plasmon-enhanced light emitters based on InGaN quantum wells.

Okamoto K, Niki I, Shvartser A, Narukawa Y, Mukai T, Scherer A.

Nat Mater. 2004 Sep;3(9):601-5. Epub 2004 Aug 22.

PMID:
15322535
16.

Segregation of In to dislocations in InGaN.

Horton MK, Rhode S, Sahonta SL, Kappers MJ, Haigh SJ, Pennycook TJ, Humphreys CJ, Dusane RO, Moram MA.

Nano Lett. 2015 Feb 11;15(2):923-30. doi: 10.1021/nl5036513. Epub 2015 Jan 21.

PMID:
25594363
17.

Recombination dynamics in InGaN/GaN nanowire heterostructures on Si(111).

Cardin V, Dion-Bertrand LI, Grégoire P, Nguyen HP, Sakowicz M, Mi Z, Silva C, Leonelli R.

Nanotechnology. 2013 Feb 1;24(4):045702. doi: 10.1088/0957-4484/24/4/045702. Epub 2013 Jan 8.

PMID:
23299780
18.

Atom probe tomography studies on the Cu(In,ga)Se2 grain boundaries.

Cojocaru-Mirédin O, Schwarz T, Choi PP, Herbig M, Wuerz R, Raabe D.

J Vis Exp. 2013 Apr 22;(74). doi: 10.3791/50376.

19.

Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer.

Jang LW, Ju JW, Jeon DW, Park JW, Polyakov AY, Lee SJ, Baek JH, Lee SM, Cho YH, Lee IH.

Opt Express. 2012 Mar 12;20(6):6036-41. doi: 10.1364/OE.20.006036.

PMID:
22418481
20.

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.

Kyaw Z, Zhang ZH, Liu W, Tan ST, Ju ZG, Zhang XL, Ji Y, Hasanov N, Zhu B, Lu S, Zhang Y, Sun XW, Demir HV.

Opt Express. 2014 Jan 13;22(1):809-16. doi: 10.1364/OE.22.000809.

PMID:
24515040

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