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Items: 1 to 20 of 246

1.

Incorporating isolated molybdenum (Mo) atoms into bilayer epitaxial graphene on 4H-SiC(0001).

Wan W, Li H, Huang H, Wong SL, Lv L, Gao Y, Wee AT.

ACS Nano. 2014 Jan 28;8(1):970-6. doi: 10.1021/nn4057929. Epub 2013 Dec 23.

PMID:
24354296
2.

The investigation of cobalt intercalation underneath epitaxial graphene on 6H-SiC(0 0 0 1).

Zhang Y, Zhang H, Cai Y, Song J, He P.

Nanotechnology. 2017 Feb 17;28(7):075701. doi: 10.1088/1361-6528/aa53c3. Epub 2016 Dec 14.

PMID:
27973342
3.

Epitaxial graphene on 4H-SiC(0001) grown under nitrogen flux: evidence of low nitrogen doping and high charge transfer.

Velez-Fort E, Mathieu C, Pallecchi E, Pigneur M, Silly MG, Belkhou R, Marangolo M, Shukla A, Sirotti F, Ouerghi A.

ACS Nano. 2012 Dec 21;6(12):10893-900. doi: 10.1021/nn304315z. Epub 2012 Nov 20.

PMID:
23148722
4.

The physics of epitaxial graphene on SiC(0001).

Kageshima H, Hibino H, Tanabe S.

J Phys Condens Matter. 2012 Aug 8;24(31):314215. doi: 10.1088/0953-8984/24/31/314215. Epub 2012 Jul 20.

PMID:
22820985
5.

Visualizing individual nitrogen dopants in monolayer graphene.

Zhao L, He R, Rim KT, Schiros T, Kim KS, Zhou H, Gutiérrez C, Chockalingam SP, Arguello CJ, Pálová L, Nordlund D, Hybertsen MS, Reichman DR, Heinz TF, Kim P, Pinczuk A, Flynn GW, Pasupathy AN.

Science. 2011 Aug 19;333(6045):999-1003. doi: 10.1126/science.1208759.

6.

Bottom-up growth of epitaxial graphene on 6H-SiC(0001).

Huang H, Chen W, Chen S, Wee AT.

ACS Nano. 2008 Dec 23;2(12):2513-8. doi: 10.1021/nn800711v.

PMID:
19206286
7.

First-principles study of magnetic properties in Mo-doped graphene.

Kang J, Deng HX, Li SS, Li J.

J Phys Condens Matter. 2011 Aug 31;23(34):346001. doi: 10.1088/0953-8984/23/34/346001.

PMID:
21841239
8.

Tip induced mechanical deformation of epitaxial graphene grown on reconstructed 6H-SiC(0001) surface during scanning tunneling and atomic force microscopy studies.

Meza JA, Lubin C, Thoyer F, Cousty J.

Nanotechnology. 2015 Jan 26;26(25):255704. doi: 10.1088/0957-4484/26/25/255704. Epub 2015 Jun 4.

PMID:
26040291
9.

Trapping of metal atoms in the defects on graphene.

Tang Y, Yang Z, Dai X.

J Chem Phys. 2011 Dec 14;135(22):224704. doi: 10.1063/1.3666849.

PMID:
22168716
10.

Atomic-scale mapping of thermoelectric power on graphene: role of defects and boundaries.

Park J, He G, Feenstra RM, Li AP.

Nano Lett. 2013 Jul 10;13(7):3269-73. doi: 10.1021/nl401473j. Epub 2013 Jun 5.

PMID:
23731127
11.

Atomic resolution of nitrogen-doped graphene on Cu foils.

Wang C, Schouteden K, Wu QH, Li Z, Jiang J, Van Haesendonck C.

Nanotechnology. 2016 Sep 9;27(36):365702. doi: 10.1088/0957-4484/27/36/365702. Epub 2016 Aug 1.

PMID:
27479275
12.

Electronic structures of an epitaxial graphene monolayer on SiC(0001) after gold intercalation: a first-principles study.

Chuang FC, Lin WH, Huang ZQ, Hsu CH, Kuo CC, Ozolins V, Yeh V.

Nanotechnology. 2011 Jul 8;22(27):275704. doi: 10.1088/0957-4484/22/27/275704. Epub 2011 May 20.

PMID:
21597151
13.

Band engineering and magnetic doping of epitaxial graphene on SiC (0001).

Jayasekera T, Kong BD, Kim KW, Buongiorno Nardelli M.

Phys Rev Lett. 2010 Apr 9;104(14):146801. Epub 2010 Apr 5.

PMID:
20481952
14.

Minimum Resistance Anisotropy of Epitaxial Graphene on SiC.

Momeni Pakdehi D, Aprojanz J, Sinterhauf A, Pierz K, Kruskopf M, Willke P, Baringhaus J, Stöckmann JP, Traeger GA, Hohls F, Tegenkamp C, Wenderoth M, Ahlers FJ, Schumacher HW.

ACS Appl Mater Interfaces. 2018 Feb 14;10(6):6039-6045. doi: 10.1021/acsami.7b18641. Epub 2018 Feb 5.

PMID:
29377673
15.

Atomic-scale morphology and electronic structure of manganese atomic layers underneath epitaxial graphene on SiC(0001).

Gao T, Gao Y, Chang C, Chen Y, Liu M, Xie S, He K, Ma X, Zhang Y, Liu Z.

ACS Nano. 2012 Aug 28;6(8):6562-8. doi: 10.1021/nn302303n. Epub 2012 Aug 13.

PMID:
22861188
16.

Doping of rhenium disulfide monolayers: a systematic first principles study.

Çakır D, Sahin H, Peeters FM.

Phys Chem Chem Phys. 2014 Aug 21;16(31):16771-9. doi: 10.1039/c4cp02007c.

PMID:
25001566
17.

One-dimensional extended lines of divacancy defects in graphene.

Botello-Méndez AR, Declerck X, Terrones M, Terrones H, Charlier JC.

Nanoscale. 2011 Jul;3(7):2868-72. doi: 10.1039/c0nr00820f. Epub 2011 Feb 14.

PMID:
21321755
18.

Atomic structure and dynamics of metal dopant pairs in graphene.

He Z, He K, Robertson AW, Kirkland AI, Kim D, Ihm J, Yoon E, Lee GD, Warner JH.

Nano Lett. 2014 Jul 9;14(7):3766-72. doi: 10.1021/nl500682j. Epub 2014 Jun 19.

PMID:
24945707
19.

Electronic interaction between nitrogen atoms in doped graphene.

Tison Y, Lagoute J, Repain V, Chacon C, Girard Y, Rousset S, Joucken F, Sharma D, Henrard L, Amara H, Ghedjatti A, Ducastelle F.

ACS Nano. 2015 Jan 27;9(1):670-8. doi: 10.1021/nn506074u. Epub 2015 Jan 9.

PMID:
25558891
20.

Epitaxial graphene on SiC(0001) and [Formula: see text]: from surface reconstructions to carbon electronics.

Starke U, Riedl C.

J Phys Condens Matter. 2009 Apr 1;21(13):134016. doi: 10.1088/0953-8984/21/13/134016. Epub 2009 Mar 12.

PMID:
21817491

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