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Items: 1 to 20 of 83

1.

Improved photoluminescence and sensing stability of porous silicon nanowires by surface passivation.

Gan L, He H, Sun L, Ye Z.

Phys Chem Chem Phys. 2014 Jan 21;16(3):890-4. doi: 10.1039/c3cp53952k. Epub 2013 Dec 2.

PMID:
24296868
2.

Facile synthesis and enhanced luminescent properties of ZnO/HfO2 core-shell nanowires.

Zhang Y, Lu HL, Wang T, Ren QH, Gu YZ, Li DH, Zhang DW.

Nanoscale. 2015 Oct 7;7(37):15462-8. doi: 10.1039/c5nr03656a.

PMID:
26339774
3.

Photoluminescence model of sulfur passivated p-InP nanowires.

Tajik N, Haapamaki CM, LaPierre RR.

Nanotechnology. 2012 Aug 10;23(31):315703. doi: 10.1088/0957-4484/23/31/315703. Epub 2012 Jul 13.

PMID:
22797486
4.

Self-assembled growth and luminescence of crystalline Si/SiOx core-shell nanowires.

Kim S, Kim CO, Shin DH, Hong SH, Kim MC, Kim J, Choi SH, Kim T, Elliman RG, Kim YM.

Nanotechnology. 2010 May 21;21(20):205601. doi: 10.1088/0957-4484/21/20/205601. Epub 2010 Apr 23.

PMID:
20413841
5.

Dramatic reduction of surface recombination by in situ surface passivation of silicon nanowires.

Dan Y, Seo K, Takei K, Meza JH, Javey A, Crozier KB.

Nano Lett. 2011 Jun 8;11(6):2527-32. doi: 10.1021/nl201179n. Epub 2011 May 20.

PMID:
21598980
6.

Silica-coated and annealed CdS nanowires with enhanced photoluminescence.

Liang S, Li M, Wang JH, Liu XL, Hao ZH, Zhou L, Yu XF, Wang QQ.

Opt Express. 2013 Feb 11;21(3):3253-8. doi: 10.1364/OE.21.003253.

PMID:
23481784
7.

Origin of visible and near-infrared photoluminescence from chemically etched Si nanowires decorated with arbitrarily shaped Si nanocrystals.

Ghosh R, Giri PK, Imakita K, Fujii M.

Nanotechnology. 2014 Jan 31;25(4):045703. doi: 10.1088/0957-4484/25/4/045703. Epub 2014 Jan 6.

PMID:
24394591
8.

Enhanced optical properties and (Zn, Mg) interdiffusion in vapour transport grown ZnO/MgO core/shell nanowires.

Grinblat G, Borrero-González LJ, Nunes LA, Tirado M, Comedi D.

Nanotechnology. 2014 Jan 24;25(3):035705.

PMID:
24356615
9.

Effect of a GaAsP shell on the optical properties of self-catalyzed GaAs nanowires grown on silicon.

Couto OD Jr, Sercombe D, Puebla J, Otubo L, Luxmoore IJ, Sich M, Elliott TJ, Chekhovich EA, Wilson LR, Skolnick MS, Liu HY, Tartakovskii AI.

Nano Lett. 2012 Oct 10;12(10):5269-74. doi: 10.1021/nl302490y. Epub 2012 Sep 24.

PMID:
22989367
10.

High-performance silicon nanowire array photoelectrochemical solar cells through surface passivation and modification.

Wang X, Peng KQ, Pan XJ, Chen X, Yang Y, Li L, Meng XM, Zhang WJ, Lee ST.

Angew Chem Int Ed Engl. 2011 Oct 10;50(42):9861-5. doi: 10.1002/anie.201104102. Epub 2011 Sep 9.

PMID:
21905189
11.

Coexistence of 1D and quasi-0D photoluminescence from single silicon nanowires.

Valenta J, Bruhn B, Linnros J.

Nano Lett. 2011 Jul 13;11(7):3003-9. doi: 10.1021/nl201610g. Epub 2011 Jun 28.

PMID:
21711002
12.

Time-resolved photoluminescence investigations on HfO2-capped InP nanowires.

Münch S, Reitzenstein S, Borgström M, Thelander C, Samuelson L, Worschech L, Forchel A.

Nanotechnology. 2010 Mar 12;21(10):105711. doi: 10.1088/0957-4484/21/10/105711. Epub 2010 Feb 16.

PMID:
20157234
13.

Structure, morphology, and photoluminescence of porous Si nanowires: effect of different chemical treatments.

Leontis I, Othonos A, Nassiopoulou AG.

Nanoscale Res Lett. 2013 Sep 11;8(1):383. doi: 10.1186/1556-276X-8-383.

14.

Temperature dependence and aging effects on silicon nanowires photoluminescence.

Artoni P, Irrera A, Iacona F, Pecora EF, Franzò G, Priolo F.

Opt Express. 2012 Jan 16;20(2):1483-90. doi: 10.1364/OE.20.001483.

PMID:
22274492
15.

Removal of surface states and recovery of band-edge emission in InAs nanowires through surface passivation.

Sun MH, Joyce HJ, Gao Q, Tan HH, Jagadish C, Ning CZ.

Nano Lett. 2012 Jul 11;12(7):3378-84. doi: 10.1021/nl300015w. Epub 2012 Jun 7.

PMID:
22663381
16.

Photoassisted tuning of silicon nanocrystal photoluminescence.

Choi J, Wang NS, Reipa V.

Langmuir. 2007 Mar 13;23(6):3388-94. Epub 2007 Feb 13.

PMID:
17295527
17.

Nitride surface passivation of GaAs nanowires: impact on surface state density.

Alekseev PA, Dunaevskiy MS, Ulin VP, Lvova TV, Filatov DO, Nezhdanov AV, Mashin AI, Berkovits VL.

Nano Lett. 2015 Jan 14;15(1):63-8. doi: 10.1021/nl502909k. Epub 2014 Dec 4.

PMID:
25434999
18.

The impact of erbium incorporation on the structure and photophysics of silicon-germanium nanowires.

Wu J, Wieligor M, Zerda TW, Coffer JL.

Nanoscale. 2010 Dec;2(12):2657-67. doi: 10.1039/c0nr00476f. Epub 2010 Oct 8.

PMID:
20931125
19.

Thermal stability and surface passivation of Ge nanowires coated by epitaxial SiGe shells.

Hu S, Kawamura Y, Huang KC, Li Y, Marshall AF, Itoh KM, Brongersma ML, McIntyre PC.

Nano Lett. 2012 Mar 14;12(3):1385-91. doi: 10.1021/nl204053w. Epub 2012 Feb 24.

PMID:
22364183
20.

Transport modulation in Ge/Si core/shell nanowires through controlled synthesis of doped Si shells.

Zhao Y, Smith JT, Appenzeller J, Yang C.

Nano Lett. 2011 Apr 13;11(4):1406-11. doi: 10.1021/nl1031138. Epub 2011 Mar 21.

PMID:
21417251

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