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Items: 1 to 20 of 312

1.

Band structure engineering in topological insulator based heterostructures.

Menshchikova TV, Otrokov MM, Tsirkin SS, Samorokov DA, Bebneva VV, Ernst A, Kuznetsov VM, Chulkov EV.

Nano Lett. 2013;13(12):6064-9. doi: 10.1021/nl403312y. Epub 2013 Dec 2.

PMID:
24274792
2.

Gate-controlled surface conduction in Na-doped Bi2Te3 topological insulator nanoplates.

Wang Y, Xiu F, Cheng L, He L, Lang M, Tang J, Kou X, Yu X, Jiang X, Chen Z, Zou J, Wang KL.

Nano Lett. 2012 Mar 14;12(3):1170-5. doi: 10.1021/nl202920p. Epub 2012 Feb 9.

PMID:
22313251
3.

Ambipolar field effect in the ternary topological insulator (Bi(x)Sb(1-x))2Te3 by composition tuning.

Kong D, Chen Y, Cha JJ, Zhang Q, Analytis JG, Lai K, Liu Z, Hong SS, Koski KJ, Mo SK, Hussain Z, Fisher IR, Shen ZX, Cui Y.

Nat Nanotechnol. 2011 Oct 2;6(11):705-9. doi: 10.1038/nnano.2011.172.

PMID:
21963714
4.

Modelling near-surface bound electron states in a 3D topological insulator: analytical and numerical approaches.

Men'shov VN, Tugushev VV, Menshchikova TV, Eremeev SV, Echenique PM, Chulkov EV.

J Phys Condens Matter. 2014 Dec 3;26(48):485003. doi: 10.1088/0953-8984/26/48/485003. Epub 2014 Oct 23.

PMID:
25339457
5.

Engineering Topological Surface States of Cr-Doped Bi2Se3 Films by Spin Reorientation and Electric Field.

Kim J, Jhi SH, Wu R.

Nano Lett. 2016 Oct 12;16(10):6656-6660. Epub 2016 Sep 29.

PMID:
27668826
6.

Electric-field tuning of the surface band structure of topological insulator Sb2Te3 thin films.

Zhang T, Ha J, Levy N, Kuk Y, Stroscio J.

Phys Rev Lett. 2013 Aug 2;111(5):056803. Epub 2013 Jul 30.

PMID:
23952429
7.

Topologically nontrivial narrow bands in ultrathin SnTe films with defect superstructures.

Kim M, Ihm J.

J Phys Condens Matter. 2014 Jun 11;26(23):235504.

PMID:
25932473
8.

Band Engineering of Dirac Surface States in Topological-Insulator-Based van der Waals Heterostructures.

Chang CZ, Tang P, Feng X, Li K, Ma XC, Duan W, He K, Xue QK.

Phys Rev Lett. 2015 Sep 25;115(13):136801. doi: 10.1103/PhysRevLett.115.136801. Epub 2015 Sep 23.

PMID:
26451573
9.

Switching a normal insulator into a topological insulator via electric field with application to phosphorene.

Liu Q, Zhang X, Abdalla LB, Fazzio A, Zunger A.

Nano Lett. 2015 Feb 11;15(2):1222-8. doi: 10.1021/nl5043769. Epub 2015 Jan 26.

PMID:
25607525
10.

Control over topological insulator photocurrents with light polarization.

McIver JW, Hsieh D, Steinberg H, Jarillo-Herrero P, Gedik N.

Nat Nanotechnol. 2011 Dec 4;7(2):96-100. doi: 10.1038/nnano.2011.214.

PMID:
22138862
11.

A Roadmap for Controlled Production of Topological Insulator Nanostructures and Thin Films.

Guo Y, Liu Z, Peng H.

Small. 2015 Jul 15;11(27):3290-305. doi: 10.1002/smll.201403426. Epub 2015 Feb 26.

PMID:
25727694
12.

Manipulating surface-related ferromagnetism in modulation-doped topological insulators.

Kou X, He L, Lang M, Fan Y, Wong K, Jiang Y, Nie T, Jiang W, Upadhyaya P, Xing Z, Wang Y, Xiu F, Schwartz RN, Wang KL.

Nano Lett. 2013 Oct 9;13(10):4587-93. doi: 10.1021/nl4020638. Epub 2013 Sep 12.

PMID:
24020459
13.

Manipulation of topological states and the bulk band gap using natural heterostructures of a topological insulator.

Nakayama K, Eto K, Tanaka Y, Sato T, Souma S, Takahashi T, Segawa K, Ando Y.

Phys Rev Lett. 2012 Dec 7;109(23):236804. Epub 2012 Dec 4.

PMID:
23368240
14.

Topological crystalline insulator nanostructures.

Shen J, Cha JJ.

Nanoscale. 2014 Nov 6;6(23):14133-40. doi: 10.1039/c4nr05124f.

PMID:
25350386
15.

Surface-dominated conduction in a 6 nm thick Bi2Se3 thin film.

He L, Xiu F, Yu X, Teague M, Jiang W, Fan Y, Kou X, Lang M, Wang Y, Huang G, Yeh NC, Wang KL.

Nano Lett. 2012 Mar 14;12(3):1486-90. doi: 10.1021/nl204234j. Epub 2012 Feb 27.

PMID:
22316380
16.

Topological Crystalline Insulator in a New Bi Semiconducting Phase.

Munoz F, Vergniory MG, Rauch T, Henk J, Chulkov EV, Mertig I, Botti S, Marques MA, Romero AH.

Sci Rep. 2016 Feb 24;6:21790. doi: 10.1038/srep21790.

17.

Transferring MBE-grown topological insulator films to arbitrary substrates and metal-insulator transition via Dirac gap.

Bansal N, Cho MR, Brahlek M, Koirala N, Horibe Y, Chen J, Wu W, Park YD, Oh S.

Nano Lett. 2014 Mar 12;14(3):1343-8. doi: 10.1021/nl404363b. Epub 2014 Mar 3.

PMID:
24576215
18.

Graphene-based topological insulator with an intrinsic bulk band gap above room temperature.

Kou L, Yan B, Hu F, Wu SC, Wehling TO, Felser C, Chen C, Frauenheim T.

Nano Lett. 2013;13(12):6251-5. doi: 10.1021/nl4037214. Epub 2013 Nov 11.

PMID:
24206392
19.

Robust 2D topological insulators in van der Waals heterostructures.

Kou L, Wu SC, Felser C, Frauenheim T, Chen C, Yan B.

ACS Nano. 2014 Oct 28;8(10):10448-54. doi: 10.1021/nn503789v. Epub 2014 Sep 18.

PMID:
25226453
20.

Strain-Induced Ferroelectric Topological Insulator.

Liu S, Kim Y, Tan LZ, Rappe AM.

Nano Lett. 2016 Mar 9;16(3):1663-8. doi: 10.1021/acs.nanolett.5b04545. Epub 2016 Feb 9.

PMID:
26814668

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