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Items: 1 to 20 of 98

1.

A multiscale simulation technique for molecular electronics: design of a directed self-assembled molecular n-bit shift register memory device.

Lambropoulos NA, Reimers JR, Crossley MJ, Hush NS, Silverbrook K.

Nanotechnology. 2013 Dec 20;24(50):505202. doi: 10.1088/0957-4484/24/50/505202. Epub 2013 Nov 22.

PMID:
24270608
2.

Issues of nanoelectronics: a possible roadmap.

Wang KL.

J Nanosci Nanotechnol. 2002 Jun-Aug;2(3-4):235-66. Review.

PMID:
12908252
3.

A majority-logic nanodevice using a balanced pair of single-electron boxes.

Oya T, Asai T, Fukui T, Amemiya Y.

J Nanosci Nanotechnol. 2002 Jun-Aug;2(3-4):333-42.

PMID:
12908260
4.

A two-stage shift register for clocked Quantum-Dot Cellular Automata.

Orlov AO, Kummamuru R, Ramasubramaniam R, Lent CS, Bernstein GH, Snider GL.

J Nanosci Nanotechnol. 2002 Jun-Aug;2(3-4):351-5.

PMID:
12908262
5.
6.

The design of a biochip: a self-assembling molecular-scale memory device.

Robinson BH, Seeman NC.

Protein Eng. 1987 Aug-Sep;1(4):295-300.

PMID:
3508280
7.

Molecular and nanoscale materials and devices in electronics.

Fu L, Cao L, Liu Y, Zhu D.

Adv Colloid Interface Sci. 2004 Dec 13;111(3):133-57. Review.

PMID:
15589806
8.

Polyoxometalate-based layered structures for charge transport control in molecular devices.

Douvas AM, Makarona E, Glezos N, Argitis P, Mielczarski JA, Mielczarski E.

ACS Nano. 2008 Apr;2(4):733-42. doi: 10.1021/nn700333j.

PMID:
19206605
9.

TranSIESTA: a spice for molecular electronics.

Stokbro K, Taylor J, Brandbyge M, Ordejón P.

Ann N Y Acad Sci. 2003 Dec;1006:212-26.

PMID:
14976020
10.

Porphyrin-silicon hybrid field-effect transistor with individually addressable top-gate structure.

Seol ML, Choi SJ, Kim CH, Moon DI, Choi YK.

ACS Nano. 2012 Jan 24;6(1):183-9. doi: 10.1021/nn204535p. Epub 2011 Dec 15.

PMID:
22148941
11.
12.

Fabrication of nanosized molecular array device and logic gate using dimethyl-phenylethynyl thiol.

Kim DH, Lee H, Song CK, Lee C.

J Nanosci Nanotechnol. 2006 Nov;6(11):3470-3.

PMID:
17252791
13.

Self-assembly-induced formation of high-density silicon oxide memristor nanostructures on graphene and metal electrodes.

Park WI, Yoon JM, Park M, Lee J, Kim SK, Jeong JW, Kim K, Jeong HY, Jeon S, No KS, Lee JY, Jung YS.

Nano Lett. 2012 Mar 14;12(3):1235-40. doi: 10.1021/nl203597d. Epub 2012 Feb 10.

PMID:
22324809
14.

Fullerenes, carbon nanotubes, and graphene for molecular electronics.

Pinzón JR, Villalta-Cerdas A, Echegoyen L.

Top Curr Chem. 2012;312:127-74. doi: 10.1007/128_2011_176. Review.

PMID:
21894583
15.

Triboelectric nanogenerators as new energy technology for self-powered systems and as active mechanical and chemical sensors.

Wang ZL.

ACS Nano. 2013 Nov 26;7(11):9533-57. doi: 10.1021/nn404614z. Epub 2013 Oct 3.

PMID:
24079963
16.

Electron transport and redox reactions in carbon-based molecular electronic junctions.

McCreery RL, Wu J, Kalakodimi RP.

Phys Chem Chem Phys. 2006 Jun 14;8(22):2572-90. Epub 2006 May 4.

PMID:
16738711
17.

Self-assembly of semiconductor organogelator nanowires for photoinduced charge separation.

Wicklein A, Ghosh S, Sommer M, Würthner F, Thelakkat M.

ACS Nano. 2009 May 26;3(5):1107-14. doi: 10.1021/nn9001165.

PMID:
19408933
18.

Analysis and design of DSP-based dual-loop controlled UPS inverters.

Wu XH, Yan C.

J Zhejiang Univ Sci. 2003 May-Jun;4(3):276-80.

PMID:
12765279
19.

New insight into the electronic structure of iron(IV)-oxo porphyrin compound I. A quantum chemical topological analysis.

Viciano I, Berski S, Martí S, Andrés J.

J Comput Chem. 2013 Apr 5;34(9):780-9. doi: 10.1002/jcc.23201. Epub 2012 Dec 12.

PMID:
23233452
20.

CMOS-compatible fabrication of room-temperature single-electron devices.

Ray V, Subramanian R, Bhadrachalam P, Ma LC, Kim CU, Koh SJ.

Nat Nanotechnol. 2008 Oct;3(10):603-8. doi: 10.1038/nnano.2008.267. Epub 2008 Sep 14.

PMID:
18838999

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