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High performance of graphene oxide-doped silicon oxide-based resistance random access memory.

Zhang R, Chang KC, Chang TC, Tsai TM, Chen KH, Lou JC, Chen JH, Young TF, Shih CC, Yang YL, Pan YC, Chu TJ, Huang SY, Pan CH, Su YT, Syu YE, Sze SM.

Nanoscale Res Lett. 2013 Nov 21;8(1):497. doi: 10.1186/1556-276X-8-497.


Physical and chemical mechanisms in oxide-based resistance random access memory.

Chang KC, Chang TC, Tsai TM, Zhang R, Hung YC, Syu YE, Chang YF, Chen MC, Chu TJ, Chen HL, Pan CH, Shih CC, Zheng JC, Sze SM.

Nanoscale Res Lett. 2015 Mar 12;10:120. doi: 10.1186/s11671-015-0740-7. eCollection 2015.


Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment.

Chen KH, Chang KC, Chang TC, Tsai TM, Liang SP, Young TF, Syu YE, Sze SM.

Nanoscale Res Lett. 2016 Dec;11(1):52. doi: 10.1186/s11671-016-1272-5. Epub 2016 Feb 1.


Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer.

Chang KC, Huang JW, Chang TC, Tsai TM, Chen KH, Young TF, Chen JH, Zhang R, Lou JC, Huang SY, Pan YC, Huang HC, Syu YE, Gan DS, Bao DH, Sze SM.

Nanoscale Res Lett. 2013 Dec 11;8(1):523. doi: 10.1186/1556-276X-8-523.


Nanoporous silicon oxide memory.

Wang G, Yang Y, Lee JH, Abramova V, Fei H, Ruan G, Thomas EL, Tour JM.

Nano Lett. 2014 Aug 13;14(8):4694-9. doi: 10.1021/nl501803s. Epub 2014 Jul 8.


Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode.

Chen KH, Chang KC, Chang TC, Tsai TM, Liang SP, Young TF, Syu YE, Sze SM.

Nanoscale Res Lett. 2016 Dec;11(1):224. doi: 10.1186/s11671-016-1431-8. Epub 2016 Apr 27.


Self-compliance RRAM characteristics using a novel W/TaO x /TiN structure.

Maikap S, Jana D, Dutta M, Prakash A.

Nanoscale Res Lett. 2014 Jun 10;9(1):292. doi: 10.1186/1556-276X-9-292. eCollection 2014.


Temperature dependence of resistive switching behaviors in resistive random access memory based on graphene oxide film.

Yi M, Cao Y, Ling H, Du Z, Wang L, Yang T, Fan Q, Xie L, Huang W.

Nanotechnology. 2014 May 9;25(18):185202. doi: 10.1088/0957-4484/25/18/185202. Epub 2014 Apr 16.


Impact of program/erase operation on the performances of oxide-based resistive switching memory.

Wang G, Long S, Yu Z, Zhang M, Li Y, Xu D, Lv H, Liu Q, Yan X, Wang M, Xu X, Liu H, Yang B, Liu M.

Nanoscale Res Lett. 2015 Feb 5;10:39. doi: 10.1186/s11671-014-0721-2. eCollection 2015.


Random telegraph noise and resistance switching analysis of oxide based resistive memory.

Choi S, Yang Y, Lu W.

Nanoscale. 2014 Jan 7;6(1):400-4. doi: 10.1039/c3nr05016e. Epub 2013 Nov 8.


Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPtx Nanocrystals for Resistive Random Access Memory Applications.

Wang LG, Cao ZY, Qian X, Zhu L, Cui DP, Li AD, Wu D.

ACS Appl Mater Interfaces. 2017 Feb 22;9(7):6634-6643. doi: 10.1021/acsami.6b16098. Epub 2017 Feb 10.


Hydrogen induced redox mechanism in amorphous carbon resistive random access memory.

Chen YJ, Chen HL, Young TF, Chang TC, Tsai TM, Chang KC, Zhang R, Chen KH, Lou JC, Chu TJ, Chen JH, Bao DH, Sze SM.

Nanoscale Res Lett. 2014 Jan 29;9(1):52. doi: 10.1186/1556-276X-9-52.


Interface-modified unipolar resistive random access memory (RRAM) structure for low-power application.

Ryoo KC, Oh JH, Jung S, Jeong H, Park BG.

J Nanosci Nanotechnol. 2012 Jul;12(7):5263-9.


Resistive Switching Characteristics of Tantalum Oxide Thin Film and Titanium Oxide Nanoparticles Hybrid Structure.

Park MR, Abbas Y, Hu Q, Yoon TS, Choi YJ, Kang CJ.

J Nanosci Nanotechnol. 2015 Nov;15(11):8613-6.


Improvement of Resistive Random Access Memory Device Performance via Embedding of Low-K Dielectric Layer.

Jang SH, Ryu JT, Jung HS, Kim TW.

J Nanosci Nanotechnol. 2016 Feb;16(2):1587-91.


Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access Memory.

Kim S, Park BG.

Nanoscale Res Lett. 2016 Dec;11(1):360. doi: 10.1186/s11671-016-1572-9. Epub 2016 Aug 12.


a-SiNx:H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths.

Jiang X, Ma Z, Xu J, Chen K, Xu L, Li W, Huang X, Feng D.

Sci Rep. 2015 Oct 28;5:15762. doi: 10.1038/srep15762.


Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory.

Zhang M, Long S, Wang G, Liu R, Xu X, Li Y, Xu D, Liu Q, Lv H, Miranda E, Suñé J, Liu M.

Nanoscale Res Lett. 2014 Dec;9(1):2500. doi: 10.1186/1556-276X-9-694. Epub 2014 Dec 23.


Unipolar resistive switching of ZnO-single-wire memristors.

Huang Y, Luo Y, Shen Z, Yuan G, Zeng H.

Nanoscale Res Lett. 2014 Aug 7;9(1):381. doi: 10.1186/1556-276X-9-381. eCollection 2014.


Conduction mechanism of a TaO(x)-based selector and its application in crossbar memory arrays.

Wang M, Zhou J, Yang Y, Gaba S, Liu M, Lu WD.

Nanoscale. 2015 Mar 21;7(11):4964-70. doi: 10.1039/c4nr06922f.


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