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Items: 1 to 20 of 129

1.

Broadband photoresponse and rectification of novel graphene oxide/n-Si heterojunctions.

Maiti R, Manna S, Midya A, Ray SK.

Opt Express. 2013 Nov 4;21(22):26034-43. doi: 10.1364/OE.21.026034.

PMID:
24216828
2.

High Detectivity Graphene-Silicon Heterojunction Photodetector.

Li X, Zhu M, Du M, Lv Z, Zhang L, Li Y, Yang Y, Yang T, Li X, Wang K, Zhu H, Fang Y.

Small. 2016 Feb 3;12(5):595-601. doi: 10.1002/smll.201502336. Epub 2015 Dec 8.

PMID:
26643577
3.

Self-powered ultrafast broadband photodetector based on p-n heterojunctions of CuO/Si nanowire array.

Hong Q, Cao Y, Xu J, Lu H, He J, Sun JL.

ACS Appl Mater Interfaces. 2014 Dec 10;6(23):20887-94. doi: 10.1021/am5054338. Epub 2014 Nov 21.

PMID:
25383662
4.

Ultrahigh broadband photoresponse of SnO2 nanoparticle thin film/SiO2/p-Si heterojunction.

Ling C, Guo T, Lu W, Xiong Y, Zhu L, Xue Q.

Nanoscale. 2017 Jun 20. doi: 10.1039/c7nr03437g. [Epub ahead of print]

PMID:
28632267
5.

Self-Powered UV-Near Infrared Photodetector Based on Reduced Graphene Oxide/n-Si Vertical Heterojunction.

Li G, Liu L, Wu G, Chen W, Qin S, Wang Y, Zhang T.

Small. 2016 Sep;12(36):5019-5026. doi: 10.1002/smll.201600835. Epub 2016 Jun 6.

PMID:
27273877
6.

Novel silicon compatible p-WS2 2D/3D heterojunction devices exhibiting broadband photoresponse and superior detectivity.

Chowdhury RK, Maiti R, Ghorai A, Midya A, Ray SK.

Nanoscale. 2016 Jul 21;8(27):13429-36. doi: 10.1039/c6nr01642a. Epub 2016 Jun 28.

PMID:
27349191
7.
8.

Transparent, broadband, flexible, and bifacial-operable photodetectors containing a large-area graphene-gold oxide heterojunction.

Liu YL, Yu CC, Lin KT, Yang TC, Wang EY, Chen HL, Chen LC, Chen KH.

ACS Nano. 2015 May 26;9(5):5093-103. doi: 10.1021/acsnano.5b00212. Epub 2015 Apr 30.

PMID:
25927392
9.

ZnSe nanowire/Si p-n heterojunctions: device construction and optoelectronic applications.

Zhang X, Zhang X, Wang L, Wu Y, Wang Y, Gao P, Han Y, Jie J.

Nanotechnology. 2013 Oct 4;24(39):395201. doi: 10.1088/0957-4484/24/39/395201. Epub 2013 Sep 6.

PMID:
24013310
10.

Organic nanowire/crystalline silicon p-n heterojunctions for high-sensitivity, broadband photodetectors.

Deng W, Jie J, Shang Q, Wang J, Zhang X, Yao S, Zhang Q, Zhang X.

ACS Appl Mater Interfaces. 2015 Jan 28;7(3):2039-45. doi: 10.1021/am5079144. Epub 2015 Jan 15.

PMID:
25545887
11.

Origin of rectification in boron nitride heterojunctions to silicon.

Teii K, Hori T, Mizusako Y, Matsumoto S.

ACS Appl Mater Interfaces. 2013 Apr 10;5(7):2535-9. doi: 10.1021/am3031129. Epub 2013 Mar 22.

PMID:
23521160
12.

InGaAs Nanomembrane/Si van der Waals Heterojunction Photodiodes with Broadband and High Photoresponsivity.

Um DS, Lee Y, Lim S, Park J, Yen WC, Chueh YL, Kim HJ, Ko H.

ACS Appl Mater Interfaces. 2016 Oct 5;8(39):26105-26111. Epub 2016 Sep 23.

PMID:
27626467
13.

Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization.

Kabra V, Aamir L, Malik MM.

Beilstein J Nanotechnol. 2014 Nov 24;5:2216-21. doi: 10.3762/bjnano.5.230. eCollection 2014.

14.

A self-powered ultraviolet detector based on a single ZnO microwire/p-Si film with double heterojunctions.

Qi J, Hu X, Wang Z, Li X, Liu W, Zhang Y.

Nanoscale. 2014 Jun 7;6(11):6025-9. doi: 10.1039/c3nr06356a. Epub 2014 Apr 29.

PMID:
24776528
15.

High-responsivity graphene/InAs nanowire heterojunction near-infrared photodetectors with distinct photocurrent on/off ratios.

Miao J, Hu W, Guo N, Lu Z, Liu X, Liao L, Chen P, Jiang T, Wu S, Ho JC, Wang L, Chen X, Lu W.

Small. 2015 Feb 25;11(8):936-42. doi: 10.1002/smll.201402312. Epub 2014 Oct 31.

PMID:
25363206
17.

Narrowband ultraviolet photodetector based on MgZnO and NPB heterojunction.

Hu Z, Li Z, Zhu L, Liu F, Lv Y, Zhang X, Wang Y.

Opt Lett. 2012 Aug 1;37(15):3072-4. doi: 10.1364/OL.37.003072.

PMID:
22859089
18.

Vertical nanowire heterojunction devices based on a clean Si/Ge interface.

Chen L, Fung WY, Lu W.

Nano Lett. 2013;13(11):5521-7. doi: 10.1021/nl403112a. Epub 2013 Oct 21.

PMID:
24134685
19.

UV induced zener diode characteristic in a single n-ZnO/p++-Si nanoheterojunction.

Pal SS, Dhara S, Wu JJ, Sundar CS, Magudapathy P, Nair KG.

J Nanosci Nanotechnol. 2012 May;12(5):3879-83.

PMID:
22852320
20.

Investigation on light emission in light-emitting diodes constructed with n-ZnO and p-Si nanowires.

Kim K, Moon T, Kim S.

J Nanosci Nanotechnol. 2011 Jul;11(7):6025-8.

PMID:
22121651

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