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Items: 1 to 20 of 165

1.

Illuminating the second conduction band and spin-orbit energy in single wurtzite InP nanowires.

Perera S, Shi T, Fickenscher MA, Jackson HE, Smith LM, Yarrison-Rice JM, Paiman S, Gao Q, Tan HH, Jagadish C.

Nano Lett. 2013;13(11):5367-72. doi: 10.1021/nl4028878. Epub 2013 Oct 23.

PMID:
24134708
2.

Probing the wurtzite conduction band structure using state filling in highly doped InP nanowires.

Wallentin J, Mergenthaler K, Ek M, Wallenberg LR, Samuelson L, Deppert K, Pistol ME, Borgström MT.

Nano Lett. 2011 Jun 8;11(6):2286-90. doi: 10.1021/nl200492g. Epub 2011 May 23.

PMID:
21604708
3.

Excitonic properties of wurtzite InP nanowires grown on silicon substrate.

Hadj Alouane MH, Chauvin N, Khmissi H, Naji K, Ilahi B, Maaref H, Patriarche G, Gendry M, Bru-Chevallier C.

Nanotechnology. 2013 Jan 25;24(3):035704. doi: 10.1088/0957-4484/24/3/035704. Epub 2012 Dec 21.

PMID:
23262659
4.

Spatial modulation of above-the-gap cathodoluminescence in InP nanowires.

Tizei LH, Zagonel LF, Tencé M, Stéphan O, Kociak M, Chiaramonte T, Ugarte D, Cotta MA.

J Phys Condens Matter. 2013 Dec 18;25(50):505303. doi: 10.1088/0953-8984/25/50/505303. Epub 2013 Nov 25.

PMID:
24275309
5.

Polarized light absorption in wurtzite InP nanowire ensembles.

De Luca M, Zilli A, Fonseka HA, Mokkapati S, Miriametro A, Tan HH, Smith LM, Jagadish C, Capizzi M, Polimeni A.

Nano Lett. 2015 Feb 11;15(2):998-1005. doi: 10.1021/nl5038374. Epub 2015 Jan 16.

PMID:
25574578
6.

Interplay between crystal phase purity and radial growth in InP nanowires.

Poole PJ, Dalacu D, Wu X, Lapointe J, Mnaymneh K.

Nanotechnology. 2012 Sep 28;23(38):385205. doi: 10.1088/0957-4484/23/38/385205. Epub 2012 Sep 5.

PMID:
22948129
7.

Structural and optical characterization of strained free-standing InP nanowires.

González JC, da Silva MI, Lozano XS, Zanchet D, Ugarte D, Ribeiro E, Gutiérrez HR, Cotta MA.

J Nanosci Nanotechnol. 2006 Jul;6(7):2182-6.

PMID:
17025146
8.

First-principles study of the electronic properties of wurtzite, zinc-blende, and twinned InP nanowires.

Li D, Wang Z, Gao F.

Nanotechnology. 2010 Dec 17;21(50):505709. doi: 10.1088/0957-4484/21/50/505709. Epub 2010 Nov 23.

PMID:
21098947
9.

Crystal phase quantum dots.

Akopian N, Patriarche G, Liu L, Harmand JC, Zwiller V.

Nano Lett. 2010 Apr 14;10(4):1198-201. doi: 10.1021/nl903534n.

PMID:
20205446
10.

Dynamics of strongly degenerate electron-hole plasmas and excitons in single InP nanowires.

Titova LV, Hoang TB, Yarrison-Rice JM, Jackson HE, Kim Y, Joyce HJ, Gao Q, Tan HH, Jagadish C, Zhang X, Zou J, Smith LM.

Nano Lett. 2007 Nov;7(11):3383-7. Epub 2007 Sep 29.

PMID:
17902724
11.

Untangling the electronic band structure of wurtzite GaAs nanowires by resonant Raman spectroscopy.

Ketterer B, Heiss M, Uccelli E, Arbiol J, i Morral AF.

ACS Nano. 2011 Sep 27;5(9):7585-92. doi: 10.1021/nn202585j. Epub 2011 Aug 19.

PMID:
21838304
12.

Direct band gap wurtzite gallium phosphide nanowires.

Assali S, Zardo I, Plissard S, Kriegner D, Verheijen MA, Bauer G, Meijerink A, Belabbes A, Bechstedt F, Haverkort JE, Bakkers EP.

Nano Lett. 2013 Apr 10;13(4):1559-63. doi: 10.1021/nl304723c. Epub 2013 Mar 18.

13.

Probing strain in bent semiconductor nanowires with Raman spectroscopy.

Chen J, Conache G, Pistol ME, Gray SM, Borgström MT, Xu H, Xu HQ, Samuelson L, Håkanson U.

Nano Lett. 2010 Apr 14;10(4):1280-6. doi: 10.1021/nl904040y.

PMID:
20192231
14.

Structural transition in indium phosphide nanowires.

Kitauchi Y, Kobayashi Y, Tomioka K, Hara S, Hiruma K, Fukui T, Motohisa J.

Nano Lett. 2010 May 12;10(5):1699-703. doi: 10.1021/nl1000407.

PMID:
20387797
15.

Tunable absorption resonances in the ultraviolet for InP nanowire arrays.

Aghaeipour M, Anttu N, Nylund G, Samuelson L, Lehmann S, Pistol ME.

Opt Express. 2014 Nov 17;22(23):29204-12. doi: 10.1364/OE.22.029204.

PMID:
25402159
16.

Electronic structures of [1 1 1]-oriented free-standing InAs and InP nanowires.

Liao G, Luo N, Chen KQ, Xu HQ.

J Phys Condens Matter. 2016 Apr 6;28(13):135303. doi: 10.1088/0953-8984/28/13/135303. Epub 2016 Mar 8.

PMID:
26951953
17.

Pressure-Dependent Photoluminescence Study of Wurtzite InP Nanowires.

Chauvin N, Mavel A, Patriarche G, Masenelli B, Gendry M, Machon D.

Nano Lett. 2016 May 11;16(5):2926-30. doi: 10.1021/acs.nanolett.5b04646. Epub 2016 Apr 12.

PMID:
27046672
18.

Temperature Dependence of Interband Transitions in Wurtzite InP Nanowires.

Zilli A, De Luca M, Tedeschi D, Fonseka HA, Miriametro A, Tan HH, Jagadish C, Capizzi M, Polimeni A.

ACS Nano. 2015 Apr 28;9(4):4277-87. doi: 10.1021/acsnano.5b00699. Epub 2015 Mar 31.

PMID:
25801648
19.

Crystal phase engineered quantum wells in ZnO nanowires.

Khranovskyy V, Glushenkov AM, Chen Y, Khalid A, Zhang H, Hultman L, Monemar B, Yakimova R.

Nanotechnology. 2013 May 31;24(21):215202. doi: 10.1088/0957-4484/24/21/215202. Epub 2013 Apr 26.

PMID:
23619281
20.

Modeling on the size dependent properties of InP quantum dots: a hybrid functional study.

Cho E, Jang H, Lee J, Jang E.

Nanotechnology. 2013 May 31;24(21):215201. doi: 10.1088/0957-4484/24/21/215201. Epub 2013 Apr 25.

PMID:
23619206

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