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Items: 1 to 20 of 206

1.

High performance GaN-based LEDs on patterned sapphire substrate with patterned composite SiO2/Al2O3 passivation layers and TiO2/Al2O3 DBR backside reflector.

Guo H, Zhang X, Chen H, Zhang P, Liu H, Chang H, Zhao W, Liao Q, Cui Y.

Opt Express. 2013 Sep 9;21(18):21456-65. doi: 10.1364/OE.21.021456.

PMID:
24104020
2.
3.

Enhanced luminous efficiency of phosphor-converted LEDs by using back reflector to increase reflectivity for yellow light.

Zhou S, Cao B, Yuan S, Liu S.

Appl Opt. 2014 Dec 1;53(34):8104-10. doi: 10.1364/AO.53.008104.

PMID:
25607969
4.

Pulsed laser deposition of ITO/AZO transparent contact layers for GaN LED applications.

Ou SL, Wuu DS, Liu SP, Fu YC, Huang SC, Horng RH.

Opt Express. 2011 Aug 15;19(17):16244-51. doi: 10.1364/OE.19.016244.

PMID:
21934987
5.
6.

Near ultraviolet InGaN/AlGaN-based light-emitting diodes with highly reflective tin-doped indium oxide/Al-based reflectors.

Choi CH, Han J, Park JS, Seong TY.

Opt Express. 2013 Nov 4;21(22):26774-9. doi: 10.1364/OE.21.026774.

PMID:
24216898
7.

Forming the graded-refractive-index antireflection layers on light-emitting diodes to enhance the light extraction.

Cho JY, Byeon KJ, Lee H.

Opt Lett. 2011 Aug 15;36(16):3203-5. doi: 10.1364/OL.36.003203.

PMID:
21847208
8.

Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate.

Lee CY, Tzou AJ, Lin BC, Lan YP, Chiu CH, Chi GC, Chen CH, Kuo HC, Lin RM, Chang CY.

Nanoscale Res Lett. 2014 Sep 16;9(1):505. doi: 10.1186/1556-276X-9-505.

9.

Fabrication of 380 nm ultra violet light emitting diodes on nano-patterned n-type GaN substrate.

Baek KS, Sadasivam KG, Lee YG, Song YH, Jeong T, Kim SH, Kim JK, Kim SH, Jeon SR, Lee JK.

J Nanosci Nanotechnol. 2011 Aug;11(8):7495-8.

PMID:
22103228
10.

InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO₂ patterned GaN film.

Sheu JK, Chang KH, Tu SJ, Lee ML, Yang CC, Hsu CK, Lai WC.

Opt Express. 2010 Nov 8;18 Suppl 4:A562-7. doi: 10.1364/OE.18.00A562.

PMID:
21165089
11.

Vertical InGaN light-emitting diode with a retained patterned sapphire layer.

Yang YC, Sheu JK, Lee ML, Yen CH, Lai WC, Hon SJ, Ko TK.

Opt Express. 2012 Nov 5;20(23):A1019-25.

PMID:
23326851
12.

Vertical InGaN light-emitting diode with a retained patterned sapphire layer.

Yang YC, Sheu JK, Lee ML, Yen CH, Lai WC, Hon SJ, Ko TK.

Opt Express. 2012 Nov 5;20 Suppl 6:A1019-25. doi: 10.1364/OE.20.0A1019.

PMID:
23187653
13.

Passivation of pigment-grade TiO(2) particles by nanothick atomic layer deposited SiO(2) films.

King DM, Liang X, Burton BB, Kamal Akhtar M, Weimer AW.

Nanotechnology. 2008 Jun 25;19(25):255604. doi: 10.1088/0957-4484/19/25/255604.

PMID:
21828656
14.

The fabrication of a patterned ZnO nanorod array for high brightness LEDs.

Park H, Byeon KJ, Yang KY, Cho JY, Lee H.

Nanotechnology. 2010 Sep 3;21(35):355304. doi: 10.1088/0957-4484/21/35/355304.

PMID:
20689168
15.

Low temperature Al2O3 surface passivation for carrier-injection SiGe optical modulator.

Kim Y, Han J, Takenaka M, Takagi S.

Opt Express. 2014 Apr 7;22(7):7458-64. doi: 10.1364/OE.22.007458.

PMID:
24718120
16.

High performance of InGaN light-emitting diodes by air-gap/GaN distributed Bragg reflectors.

Ryu JH, Kim HY, Kim HK, Katharria YS, Han N, Kang JH, Park YJ, Han M, Ryu BD, Ko KB, Suh EK, Hong CH.

Opt Express. 2012 Apr 23;20(9):9999-10003. doi: 10.1364/OE.20.009999.

PMID:
22535092
17.

Nano-scale SiO2 patterned n-type GaN substrate for 380 nm ultra violet light emitting diodes.

Jo MS, Seo HW, Tawfik WZ, Yang SB, Lee JJ, Ryu SW, Ha JS, Jeon SR, Cui H, Park SH, Lee JK.

J Nanosci Nanotechnol. 2014 Aug;14(8):6108-11.

PMID:
25936066
18.

Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition.

Wang WC, Tsai MC, Yang J, Hsu C, Chen MJ.

ACS Appl Mater Interfaces. 2015 May 20;7(19):10228-37. doi: 10.1021/acsami.5b00677.

PMID:
25919200
19.

InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate.

Ke WC, Lee FW, Chiang CY, Liang ZY, Chen WK, Seong TY.

ACS Appl Mater Interfaces. 2016 Dec 21;8(50):34520-34529.

PMID:
27998131
20.

Al2O3/TiO2 multilayer passivation layers grown at low temperature for flexible organic devices.

Kwon TS, Moon DY, Moon YK, Kim WS, Park JW.

J Nanosci Nanotechnol. 2012 Apr;12(4):3696-700.

PMID:
22849199

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