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Items: 1 to 20 of 180

1.

Spin-orbit splitting in single-layer MoS2 revealed by triply resonant Raman scattering.

Sun L, Yan J, Zhan D, Liu L, Hu H, Li H, Tay BK, Kuo JL, Huang CC, Hewak DW, Lee PS, Shen ZX.

Phys Rev Lett. 2013 Sep 20;111(12):126801. Epub 2013 Sep 17.

PMID:
24093287
2.

Anomalous lattice vibrations of monolayer MoS2 probed by ultraviolet Raman scattering.

Liu HL, Guo H, Yang T, Zhang Z, Kumamoto Y, Shen CC, Hsu YT, Li LJ, Saito R, Kawata S.

Phys Chem Chem Phys. 2015 Jun 14;17(22):14561-8. doi: 10.1039/c5cp01347j.

PMID:
25969355
3.

On Valence-Band Splitting in Layered MoS2.

Zhang Y, Li H, Wang H, Liu R, Zhang SL, Qiu ZJ.

ACS Nano. 2015 Aug 25;9(8):8514-9. doi: 10.1021/acsnano.5b03505. Epub 2015 Aug 4.

PMID:
26222731
4.

Transition metal chalcogenides: ultrathin inorganic materials with tunable electronic properties.

Heine T.

Acc Chem Res. 2015 Jan 20;48(1):65-72. doi: 10.1021/ar500277z. Epub 2014 Dec 9.

PMID:
25489917
5.

Atypical Exciton-Phonon Interactions in WS2 and WSe2 Monolayers Revealed by Resonance Raman Spectroscopy.

Del Corro E, Botello-Méndez A, Gillet Y, Elias AL, Terrones H, Feng S, Fantini C, Rhodes D, Pradhan N, Balicas L, Gonze X, Charlier JC, Terrones M, Pimenta MA.

Nano Lett. 2016 Apr 13;16(4):2363-8. doi: 10.1021/acs.nanolett.5b05096. Epub 2016 Mar 24.

PMID:
26998817
6.

Second-order overtone and combination Raman modes of graphene layers in the range of 1690-2150 cm(-1).

Cong C, Yu T, Saito R, Dresselhaus GF, Dresselhaus MS.

ACS Nano. 2011 Mar 22;5(3):1600-5. doi: 10.1021/nn200010m. Epub 2011 Feb 23.

PMID:
21344883
7.

Doubly and triply resonant Raman scattering via electron-two-phonon and impurity-induced Fröhlich interactions in uniaxially stressed GaAs.

Alexandrou A, Trallero-Giner C, Kanellis G, Cardona M.

Phys Rev B Condens Matter. 1989 Jul 15;40(2):1013-1022. No abstract available.

PMID:
9991924
8.

Ideal two-dimensional electron systems with a giant Rashba-type spin splitting in real materials: surfaces of bismuth tellurohalides.

Eremeev SV, Nechaev IA, Koroteev YM, Echenique PM, Chulkov EV.

Phys Rev Lett. 2012 Jun 15;108(24):246802. Epub 2012 Jun 13.

PMID:
23004307
9.

Preparation and applications of mechanically exfoliated single-layer and multilayer MoS₂ and WSe₂ nanosheets.

Li H, Wu J, Yin Z, Zhang H.

Acc Chem Res. 2014 Apr 15;47(4):1067-75. doi: 10.1021/ar4002312. Epub 2014 Apr 3.

PMID:
24697842
10.

Coherent optical phonons of ZnO under near resonant photoexcitation.

Ishioka K, Petek H, Kaydashev VE, Kaidashev EM, Misochko OV.

J Phys Condens Matter. 2010 Nov 24;22(46):465803. doi: 10.1088/0953-8984/22/46/465803. Epub 2010 Nov 5.

PMID:
21403377
11.

Control of Schottky barriers in single layer MoS2 transistors with ferromagnetic contacts.

Chen JR, Odenthal PM, Swartz AG, Floyd GC, Wen H, Luo KY, Kawakami RK.

Nano Lett. 2013 Jul 10;13(7):3106-10. doi: 10.1021/nl4010157. Epub 2013 Jun 12.

PMID:
23746085
12.

Enhanced resonant raman scattering and electron-phonon coupling from self-assembled secondary ZnO nanoparticles.

Cheng HM, Lin KF, Hsu HC, Lin CJ, Lin LJ, Hsieh WF.

J Phys Chem B. 2005 Oct 6;109(39):18385-90.

PMID:
16853367
13.

From spin flip excitations to the spin susceptibility enhancement of a two-dimensional electron gas.

Perez F, Aku-leh C, Richards D, Jusserand B, Smith LC, Wolverson D, Karczewski G.

Phys Rev Lett. 2007 Jul 13;99(2):026403. Epub 2007 Jul 12.

PMID:
17678240
14.

Tunable surface electron spin splitting with electric double-layer transistors based on InN.

Yin C, Yuan H, Wang X, Liu S, Zhang S, Tang N, Xu F, Chen Z, Shimotani H, Iwasa Y, Chen Y, Ge W, Shen B.

Nano Lett. 2013 May 8;13(5):2024-9. doi: 10.1021/nl400153p. Epub 2013 Apr 29.

PMID:
23614498
15.

Revealing silent vibration modes of nanomaterials by detecting anti-Stokes hyper-Raman scattering with femtosecond laser pulses.

Zeng J, Chen L, Dai Q, Lan S, Tie S.

Nanoscale. 2016 Jan 21;8(3):1572-9. doi: 10.1039/c5nr06105a.

PMID:
26690965
16.

Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material.

Zhang X, Qiao XF, Shi W, Wu JB, Jiang DS, Tan PH.

Chem Soc Rev. 2015 May 7;44(9):2757-85. doi: 10.1039/c4cs00282b. Epub 2015 Feb 13.

PMID:
25679474
17.

Electronic structure of epitaxial single-layer MoS2.

Miwa JA, Ulstrup S, Sørensen SG, Dendzik M, Čabo AG, Bianchi M, Lauritsen JV, Hofmann P.

Phys Rev Lett. 2015 Jan 30;114(4):046802. Epub 2015 Jan 29.

PMID:
25679902
18.

The optical phonon resonance scattering with spin-conserving and spin-flip processes between Landau levels in graphene.

Wang ZW, Li ZQ, Li SS.

J Phys Condens Matter. 2014 Oct 1;26(39):395302. doi: 10.1088/0953-8984/26/39/395302. Epub 2014 Sep 5.

PMID:
25192437
19.

Phonon self-energy corrections to nonzero wave-vector phonon modes in single-layer graphene.

Araujo PT, Mafra DL, Sato K, Saito R, Kong J, Dresselhaus MS.

Phys Rev Lett. 2012 Jul 27;109(4):046801. Epub 2012 Jul 24.

PMID:
23006101
20.

Excitation mechanism of A<sub>1g</sub> mode and origin of nonlinear temperature dependence of Raman shift of CVD-grown mono- and few-layer MoS<sub>2</sub> films.

Yang T, Huang X, Zhou H, Wu G, Lai T.

Opt Express. 2016 May 30;24(11):12281-92. doi: 10.1364/OE.24.012281.

PMID:
27410143

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