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Items: 1 to 20 of 200

1.

Atomic scale structure changes induced by charged domain walls in ferroelectric materials.

Li L, Gao P, Nelson CT, Jokisaari JR, Zhang Y, Kim SJ, Melville A, Adamo C, Schlom DG, Pan X.

Nano Lett. 2013 Nov 13;13(11):5218-23. doi: 10.1021/nl402651r.

PMID:
24070735
2.

Atomic-scale study of electric dipoles near charged and uncharged domain walls in ferroelectric films.

Jia CL, Mi SB, Urban K, Vrejoiu I, Alexe M, Hesse D.

Nat Mater. 2008 Jan;7(1):57-61.

PMID:
18066068
3.

Atomic-scale mapping of dipole frustration at 90° charged domain walls in ferroelectric PbTiO3 films.

Tang YL, Zhu YL, Wang YJ, Wang WY, Xu YB, Ren WJ, Zhang ZD, Ma XL.

Sci Rep. 2014 Feb 18;4:4115. doi: 10.1038/srep04115.

4.

Controlled creation and displacement of charged domain walls in ferroelectric thin films.

Feigl L, Sluka T, McGilly LJ, Crassous A, Sandu CS, Setter N.

Sci Rep. 2016 Aug 10;6:31323. doi: 10.1038/srep31323.

5.

Electromechanical coupling among edge dislocations, domain walls, and nanodomains in BiFeO3 revealed by unit-cell-wise strain and polarization maps.

Lubk A, Rossell MD, Seidel J, Chu YH, Ramesh R, Hÿtch MJ, Snoeck E.

Nano Lett. 2013 Apr 10;13(4):1410-5. doi: 10.1021/nl304229k.

PMID:
23418908
6.

Interface-induced nonswitchable domains in ferroelectric thin films.

Han MG, Marshall MS, Wu L, Schofield MA, Aoki T, Twesten R, Hoffman J, Walker FJ, Ahn CH, Zhu Y.

Nat Commun. 2014 Aug 18;5:4693. doi: 10.1038/ncomms5693.

PMID:
25131416
7.

Domain dynamics during ferroelectric switching.

Nelson CT, Gao P, Jokisaari JR, Heikes C, Adamo C, Melville A, Baek SH, Folkman CM, Winchester B, Gu Y, Liu Y, Zhang K, Wang E, Li J, Chen LQ, Eom CB, Schlom DG, Pan X.

Science. 2011 Nov 18;334(6058):968-71. doi: 10.1126/science.1206980.

8.

Revealing the role of defects in ferroelectric switching with atomic resolution.

Gao P, Nelson CT, Jokisaari JR, Baek SH, Bark CW, Zhang Y, Wang E, Schlom DG, Eom CB, Pan X.

Nat Commun. 2011 Dec 20;2:591. doi: 10.1038/ncomms1600.

PMID:
22186887
9.

Domain-wall conduction in ferroelectric BiFeO3 controlled by accumulation of charged defects.

Rojac T, Bencan A, Drazic G, Sakamoto N, Ursic H, Jancar B, Tavcar G, Makarovic M, Walker J, Malic B, Damjanovic D.

Nat Mater. 2017 Mar;16(3):322-327. doi: 10.1038/nmat4799.

PMID:
27842075
10.

Nanoscale Origins of Ferroelastic Domain Wall Mobility in Ferroelectric Multilayers.

Huang HH, Hong Z, Xin HL, Su D, Chen LQ, Huang G, Munroe PR, Valanoor N.

ACS Nano. 2016 Nov 22;10(11):10126-10134.

PMID:
27797485
11.

180° Ferroelectric Stripe Nanodomains in BiFeO3 Thin Films.

Chen Z, Liu J, Qi Y, Chen D, Hsu SL, Damodaran AR, He X, N'Diaye AT, Rockett A, Martin LW.

Nano Lett. 2015 Oct 14;15(10):6506-13. doi: 10.1021/acs.nanolett.5b02031.

PMID:
26317408
12.

Atomic mechanism of polarization-controlled surface reconstruction in ferroelectric thin films.

Gao P, Liu HJ, Huang YL, Chu YH, Ishikawa R, Feng B, Jiang Y, Shibata N, Wang EG, Ikuhara Y.

Nat Commun. 2016 Apr 19;7:11318. doi: 10.1038/ncomms11318.

13.

Spontaneous vortex nanodomain arrays at ferroelectric heterointerfaces.

Nelson CT, Winchester B, Zhang Y, Kim SJ, Melville A, Adamo C, Folkman CM, Baek SH, Eom CB, Schlom DG, Chen LQ, Pan X.

Nano Lett. 2011 Feb 9;11(2):828-34. doi: 10.1021/nl1041808.

PMID:
21247184
14.

Enhancement of Local Photovoltaic Current at Ferroelectric Domain Walls in BiFeO3.

Yang MM, Bhatnagar A, Luo ZD, Alexe M.

Sci Rep. 2017 Feb 20;7:43070. doi: 10.1038/srep43070.

15.

On the benefit of aberration-corrected HAADF-STEM for strain determination and its application to tailoring ferroelectric domain patterns.

Tang YL, Zhu YL, Ma XL.

Ultramicroscopy. 2016 Jan;160:57-63. doi: 10.1016/j.ultramic.2015.09.014.

PMID:
26452195
16.

Ferroelastic domain switching dynamics under electrical and mechanical excitations.

Gao P, Britson J, Nelson CT, Jokisaari JR, Duan C, Trassin M, Baek SH, Guo H, Li L, Wang Y, Chu YH, Minor AM, Eom CB, Ramesh R, Chen LQ, Pan X.

Nat Commun. 2014 May 2;5:3801. doi: 10.1038/ncomms4801.

PMID:
24787035
17.

Electrical and mechanical switching of ferroelectric polarization in the 70 nm BiFeO3 film.

Chen L, Cheng Z, Xu W, Meng X, Yuan G, Liu J, Liu Z.

Sci Rep. 2016 Jan 11;6:19092. doi: 10.1038/srep19092.

18.

Suppression of creep-regime dynamics in epitaxial ferroelectric BiFeO3 films.

Shin YJ, Jeon BC, Yang SM, Hwang I, Cho MR, Sando D, Lee SR, Yoon JG, Noh TW.

Sci Rep. 2015 May 27;5:10485. doi: 10.1038/srep10485.

19.

Depletion layers and domain walls in semiconducting ferroelectric thin films.

Xiao Y, Shenoy VB, Bhattacharya K.

Phys Rev Lett. 2005 Dec 9;95(24):247603.

PMID:
16384425
20.

Stable ferroelectric perovskite structure with giant axial ratio and polarization in epitaxial BiFe0.6Ga0.4O3 thin films.

Fan Z, Xiao J, Liu H, Yang P, Ke Q, Ji W, Yao K, Ong KP, Zeng K, Wang J.

ACS Appl Mater Interfaces. 2015 Feb 4;7(4):2648-53. doi: 10.1021/am509016w.

PMID:
25568932
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