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Items: 1 to 20 of 164

1.

X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates.

Zaumseil P, Kozlowski G, Yamamoto Y, Schubert MA, Schroeder T.

J Appl Crystallogr. 2013 Aug 1;46(Pt 4):868-873. Epub 2013 Jun 7.

2.

The role of SiGe buffer in growth and relaxation of Ge on free-standing Si(001) nano-pillars.

Zaumseil P, Kozlowski G, Schubert MA, Yamamoto Y, Bauer J, Schülli TU, Tillack B, Schroeder T.

Nanotechnology. 2012 Sep 7;23(35):355706. doi: 10.1088/0957-4484/23/35/355706. Epub 2012 Aug 15.

PMID:
22894894
3.

Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition.

Bollani M, Chrastina D, Fedorov A, Sordan R, Picco A, Bonera E.

Nanotechnology. 2010 Nov 26;21(47):475302. doi: 10.1088/0957-4484/21/47/475302. Epub 2010 Oct 29.

PMID:
21030775
4.

Comparison of cross-sectional transmission electron microscope studies of thin germanium epilayers grown on differently oriented silicon wafers.

Norris DJ, Myronov M, Leadley DR, Walther T.

J Microsc. 2017 Oct 3. doi: 10.1111/jmi.12654. [Epub ahead of print]

PMID:
28972660
5.

Tailoring the strain in Si nano-structures for defect-free epitaxial Ge over growth.

Zaumseil P, Yamamoto Y, Schubert MA, Capellini G, Skibitzki O, Zoellner MH, Schroeder T.

Nanotechnology. 2015 Sep 4;26(35):355707. doi: 10.1088/0957-4484/26/35/355707. Epub 2015 Aug 12.

PMID:
26267559
6.

Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns.

Niu G, Capellini G, Lupina G, Niermann T, Salvalaglio M, Marzegalli A, Schubert MA, Zaumseil P, Krause HM, Skibitzki O, Lehmann M, Montalenti F, Xie YH, Schroeder T.

ACS Appl Mater Interfaces. 2016 Jan 27;8(3):2017-26. doi: 10.1021/acsami.5b10336. Epub 2016 Jan 13.

PMID:
26709534
7.

Quantum-confined direct band transitions in tensile strained Ge/SiGe quantum wells on silicon substrates.

Chen Y, Li C, Lai H, Chen S.

Nanotechnology. 2010 Mar 19;21(11):115207. doi: 10.1088/0957-4484/21/11/115207. Epub 2010 Feb 24.

PMID:
20179329
8.

Stranski-Krastanow growth of germanium on silicon nanowires.

Pan L, Lew KK, Redwing JM, Dickey EC.

Nano Lett. 2005 Jun;5(6):1081-5.

PMID:
15943447
9.

Dislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers.

Niu G, Capellini G, Schubert MA, Niermann T, Zaumseil P, Katzer J, Krause HM, Skibitzki O, Lehmann M, Xie YH, von Känel H, Schroeder T.

Sci Rep. 2016 Mar 4;6:22709. doi: 10.1038/srep22709.

10.

Heteroepitaxy of Ge on Si(001) with pits and windows transferred from free-standing porous alumina mask.

Huangfu Y, Zhan W, Hong X, Fang X, Ding G, Ye H.

Nanotechnology. 2013 May 10;24(18):185302. doi: 10.1088/0957-4484/24/18/185302. Epub 2013 Apr 11.

PMID:
23579337
11.

Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X-ray Nanodiffraction.

Richard MI, Zoellner MH, Chahine GA, Zaumseil P, Capellini G, Häberlen M, Storck P, Schülli TU, Schroeder T.

ACS Appl Mater Interfaces. 2015 Dec 9;7(48):26696-700. doi: 10.1021/acsami.5b08645. Epub 2015 Nov 30.

PMID:
26541318
12.

Ge-rich SiGe-on-insulator for waveguide optical modulator application fabricated by Ge condensation and SiGe regrowth.

Kim Y, Yokoyama M, Taoka N, Takenaka M, Takagi S.

Opt Express. 2013 Aug 26;21(17):19615-23. doi: 10.1364/OE.21.019615.

PMID:
24105508
13.
14.

Fabrication of core-shell nanostructures via silicon on insulator dewetting and germanium condensation: towards a strain tuning method for SiGe-based heterostructures in a three-dimensional geometry.

Naffouti M, David T, Benkouider A, Favre L, Cabie M, Ronda A, Berbezier I, Abbarchi M.

Nanotechnology. 2016 Jul 29;27(30):305602. doi: 10.1088/0957-4484/27/30/305602. Epub 2016 Jun 15.

PMID:
27302611
15.

Growth and relaxation processes in Ge nanocrystals on free-standing Si(001) nanopillars.

Kozlowski G, Zaumseil P, Schubert MA, Yamamoto Y, Bauer J, Schülli TU, Tillack B, Schroeder T.

Nanotechnology. 2012 Mar 23;23(11):115704. doi: 10.1088/0957-4484/23/11/115704. Epub 2012 Feb 28.

PMID:
22369884
16.

Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress.

Liu Y, Niu J, Wang H, Han G, Zhang C, Feng Q, Zhang J, Hao Y.

Nanoscale Res Lett. 2017 Dec;12(1):120. doi: 10.1186/s11671-017-1913-3. Epub 2017 Feb 16.

17.
18.

Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation.

Ferragut R, Calloni A, Dupasquier A, Isella G.

Nanoscale Res Lett. 2010 Oct 24;5(12):1942-7. doi: 10.1007/s11671-010-9818-4.

19.

Strain field mapping of dislocations in a Ge/Si heterostructure.

Liu Q, Zhao C, Su S, Li J, Xing Y, Cheng B.

PLoS One. 2013 Apr 23;8(4):e62672. doi: 10.1371/journal.pone.0062672. Print 2013.

20.

Ge quantum dots structural peculiarities depending on the preparation conditions.

Erenburg S, Bausk N, Mazalov L, Nikiforov A, Yakimov A.

J Synchrotron Radiat. 2003 Sep 1;10(Pt 5):380-3. Epub 2003 Aug 28.

PMID:
12944626

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