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Items: 1 to 20 of 102

1.

Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons.

Tongay S, Suh J, Ataca C, Fan W, Luce A, Kang JS, Liu J, Ko C, Raghunathanan R, Zhou J, Ogletree F, Li J, Grossman JC, Wu J.

Sci Rep. 2013;3:2657. doi: 10.1038/srep02657.

2.

Defect-induced photoluminescence in monolayer semiconducting transition metal dichalcogenides.

Chow PK, Jacobs-Gedrim RB, Gao J, Lu TM, Yu B, Terrones H, Koratkar N.

ACS Nano. 2015 Feb 24;9(2):1520-7. doi: 10.1021/nn5073495. Epub 2015 Jan 26.

PMID:
25603228
3.

Optical identification of sulfur vacancies: Bound excitons at the edges of monolayer tungsten disulfide.

Carozo V, Wang Y, Fujisawa K, Carvalho BR, McCreary A, Feng S, Lin Z, Zhou C, Perea-López N, Elías AL, Kabius B, Crespi VH, Terrones M.

Sci Adv. 2017 Apr 28;3(4):e1602813. doi: 10.1126/sciadv.1602813. eCollection 2017 Apr.

4.

Photoluminescence Enhancement and Structure Repairing of Monolayer MoSe2 by Hydrohalic Acid Treatment.

Han HV, Lu AY, Lu LS, Huang JK, Li H, Hsu CL, Lin YC, Chiu MH, Suenaga K, Chu CW, Kuo HC, Chang WH, Li LJ, Shi Y.

ACS Nano. 2016 Jan 26;10(1):1454-61. doi: 10.1021/acsnano.5b06960. Epub 2016 Jan 5.

PMID:
26716765
5.

Electronic structure and optical signatures of semiconducting transition metal dichalcogenide nanosheets.

Zhao W, Ribeiro RM, Eda G.

Acc Chem Res. 2015 Jan 20;48(1):91-9. doi: 10.1021/ar500303m. Epub 2014 Dec 17.

PMID:
25515381
6.

Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating.

Tongay S, Zhou J, Ataca C, Liu J, Kang JS, Matthews TS, You L, Li J, Grossman JC, Wu J.

Nano Lett. 2013 Jun 12;13(6):2831-6. doi: 10.1021/nl4011172. Epub 2013 May 1.

PMID:
23627637
7.

Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS2 /Graphene Heterostructures.

Liu M, Shi J, Li Y, Zhou X, Ma D, Qi Y, Zhang Y, Liu Z.

Small. 2017 Aug 11. doi: 10.1002/smll.201602967. [Epub ahead of print]

PMID:
28799711
8.

Bandgap modulation of MoS2 monolayer by thermal annealing and quick cooling.

Zhao HQ, Mao X, Zhou D, Feng S, Shi X, Ma Y, Wei X, Mao Y.

Nanoscale. 2016 Dec 7;8(45):18995-19003. Epub 2016 Nov 3.

PMID:
27808314
9.

Highly anisotropic and robust excitons in monolayer black phosphorus.

Wang X, Jones AM, Seyler KL, Tran V, Jia Y, Zhao H, Wang H, Yang L, Xu X, Xia F.

Nat Nanotechnol. 2015 Jun;10(6):517-21. doi: 10.1038/nnano.2015.71. Epub 2015 Apr 27.

PMID:
25915195
10.

Pressure-Dependent Light Emission of Charged and Neutral Excitons in Monolayer MoSe2.

Fu X, Li F, Lin JF, Gong Y, Huang X, Huang Y, Han B, Zhou Q, Cui T.

J Phys Chem Lett. 2017 Aug 3;8(15):3556-3563. doi: 10.1021/acs.jpclett.7b01374. Epub 2017 Jul 19.

PMID:
28715221
11.

Intrinsic homogeneous linewidth and broadening mechanisms of excitons in monolayer transition metal dichalcogenides.

Moody G, Kavir Dass C, Hao K, Chen CH, Li LJ, Singh A, Tran K, Clark G, Xu X, Berghäuser G, Malic E, Knorr A, Li X.

Nat Commun. 2015 Sep 18;6:8315. doi: 10.1038/ncomms9315.

12.

Tailoring Vacancies Far Beyond Intrinsic Levels Changes the Carrier Type and Optical Response in Monolayer MoSe2-x Crystals.

Mahjouri-Samani M, Liang L, Oyedele A, Kim YS, Tian M, Cross N, Wang K, Lin MW, Boulesbaa A, Rouleau CM, Puretzky AA, Xiao K, Yoon M, Eres G, Duscher G, Sumpter BG, Geohegan DB.

Nano Lett. 2016 Aug 10;16(8):5213-20. doi: 10.1021/acs.nanolett.6b02263. Epub 2016 Jul 18.

PMID:
27416103
13.

Multiple exciton generation and recombination in carbon nanotubes and nanocrystals.

Kanemitsu Y.

Acc Chem Res. 2013 Jun 18;46(6):1358-66. doi: 10.1021/ar300269z. Epub 2013 Feb 19.

PMID:
23421584
14.

Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor.

Ugeda MM, Bradley AJ, Shi SF, da Jornada FH, Zhang Y, Qiu DY, Ruan W, Mo SK, Hussain Z, Shen ZX, Wang F, Louie SG, Crommie MF.

Nat Mater. 2014 Dec;13(12):1091-5. doi: 10.1038/nmat4061. Epub 2014 Aug 31.

PMID:
25173579
15.

Strong photoluminescence enhancement of MoS(2) through defect engineering and oxygen bonding.

Nan H, Wang Z, Wang W, Liang Z, Lu Y, Chen Q, He D, Tan P, Miao F, Wang X, Wang J, Ni Z.

ACS Nano. 2014 Jun 24;8(6):5738-45. doi: 10.1021/nn500532f. Epub 2014 May 20.

PMID:
24836121
16.

Observation of biexcitonic emission at extremely low power density in tungsten disulfide atomic layers grown on hexagonal boron nitride.

Okada M, Miyauchi Y, Matsuda K, Taniguchi T, Watanabe K, Shinohara H, Kitaura R.

Sci Rep. 2017 Mar 23;7(1):322. doi: 10.1038/s41598-017-00068-0.

17.

Population pulsation resonances of excitons in monolayer MoSe2 with sub-1  μeV linewidths.

Schaibley JR, Karin T, Yu H, Ross JS, Rivera P, Jones AM, Scott ME, Yan J, Mandrus DG, Yao W, Fu KM, Xu X.

Phys Rev Lett. 2015 Apr 3;114(13):137402. Epub 2015 Apr 1.

PMID:
25884137
18.

Greatly Enhanced Optical Absorption of a Defective MoS2 Monolayer through Oxygen Passivation.

Shu H, Li Y, Niu X, Wang J.

ACS Appl Mater Interfaces. 2016 May 25;8(20):13150-6. doi: 10.1021/acsami.6b03242. Epub 2016 May 11.

PMID:
27144902
19.

Evidence for Fast Interlayer Energy Transfer in MoSe2/WS2 Heterostructures.

Kozawa D, Carvalho A, Verzhbitskiy I, Giustiniano F, Miyauchi Y, Mouri S, Castro Neto AH, Matsuda K, Eda G.

Nano Lett. 2016 Jul 13;16(7):4087-93. doi: 10.1021/acs.nanolett.6b00801. Epub 2016 Jun 27.

PMID:
27324060
20.

Enabling valley selective exciton scattering in monolayer WSe2 through upconversion.

Manca M, Glazov MM, Robert C, Cadiz F, Taniguchi T, Watanabe K, Courtade E, Amand T, Renucci P, Marie X, Wang G, Urbaszek B.

Nat Commun. 2017 Apr 3;8:14927. doi: 10.1038/ncomms14927.

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