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Items: 1 to 20 of 84

1.

Synthesis, characterization, and nonvolatile ternary memory behavior of a larger heteroacene with nine linearly fused rings and two different heteroatoms.

Gu PY, Zhou F, Gao J, Li G, Wang C, Xu QF, Zhang Q, Lu JM.

J Am Chem Soc. 2013 Sep 25;135(38):14086-9. doi: 10.1021/ja408208c. Epub 2013 Sep 13.

PMID:
24025023
2.

Different Steric-Twist-Induced Ternary Memory Characteristics in Nonconjugated Copolymers with Pendant Naphthalene and 1,8-Naphthalimide Moieties.

Wang M, Li Z, Li H, He J, Li N, Xu Q, Lu J.

Chem Asian J. 2017 Oct 18;12(20):2744-2748. doi: 10.1002/asia.201701044. Epub 2017 Sep 21.

PMID:
28834320
3.

Synthesis, characterization, and non-volatile memory device application of an N-substituted heteroacene.

Wang C, Wang J, Li PZ, Gao J, Tan SY, Xiong WW, Hu B, Lee PS, Zhao Y, Zhang Q.

Chem Asian J. 2014 Mar;9(3):779-83. doi: 10.1002/asia.201301547. Epub 2014 Jan 2.

PMID:
24382807
4.

Synthesis, characterization, and physical properties of a conjugated heteroacene: 2-methyl-1,4,6,7,8,9-hexaphenylbenz(g)isoquinolin-3(2H)-one (BIQ).

Zhang Q, Xiao J, Yin Z, Duong HM, Qiao F, Boey F, Hu X, Zhang H, Wudl F.

Chem Asian J. 2011 Mar 1;6(3):856-62. doi: 10.1002/asia.201000659. Epub 2010 Dec 14.

PMID:
21344661
5.

A Solution-Processable Donor-Acceptor Compound Containing Boron(III) Centers for Small-Molecule-Based High-Performance Ternary Electronic Memory Devices.

Poon CT, Wu D, Lam WH, Yam VW.

Angew Chem Int Ed Engl. 2015 Sep 1;54(36):10569-73. doi: 10.1002/anie.201504997. Epub 2015 Jul 15.

PMID:
26179856
6.

A Phosphole Oxide-Containing Organogold(III) Complex for Solution-Processable Resistive Memory Devices with Ternary Memory Performances.

Hong EY, Poon CT, Yam VW.

J Am Chem Soc. 2016 May 25;138(20):6368-71. doi: 10.1021/jacs.6b02629. Epub 2016 May 10.

PMID:
27163338
7.

Synthesis and nonvolatile memory behaviors of dioxatetraazapentacene derivatives.

Li G, Zheng K, Wang C, Leck KS, Hu F, Sun XW, Zhang Q.

ACS Appl Mater Interfaces. 2013 Jul 24;5(14):6458-62. doi: 10.1021/am4023434. Epub 2013 Jul 10.

PMID:
23834348
8.

A large pyrene-fused N-heteroacene: fifteen aromatic six-membered rings annulated in one row.

Wang Z, Gu P, Liu G, Yao H, Wu Y, Li Y, Rakesh G, Zhu J, Fu H, Zhang Q.

Chem Commun (Camb). 2017 Jul 6;53(55):7772-7775. doi: 10.1039/c7cc03898d.

PMID:
28650017
9.

Switching of Resistive Memory Behavior from Binary to Ternary Logic via Alteration of Substituent Positioning on the Subphthalocyanine Core.

Chan H, Wong HL, Ng M, Poon CT, Yam VW.

J Am Chem Soc. 2017 May 31;139(21):7256-7263. doi: 10.1021/jacs.7b00895. Epub 2017 May 16.

PMID:
28510425
10.

Sericin for resistance switching device with multilevel nonvolatile memory.

Wang H, Meng F, Cai Y, Zheng L, Li Y, Liu Y, Jiang Y, Wang X, Chen X.

Adv Mater. 2013 Oct 11;25(38):5498-503. doi: 10.1002/adma.201301983. Epub 2013 Jul 29.

PMID:
23893500
11.

Programmable digital memory devices based on nanoscale thin films of a thermally dimensionally stable polyimide.

Lee TJ, Chang CW, Hahm SG, Kim K, Park S, Kim DM, Kim J, Kwon WS, Liou GS, Ree M.

Nanotechnology. 2009 Apr 1;20(13):135204. doi: 10.1088/0957-4484/20/13/135204. Epub 2009 Mar 10.

PMID:
19420490
12.

CMOS compatible nanoscale nonvolatile resistance switching memory.

Jo SH, Lu W.

Nano Lett. 2008 Feb;8(2):392-7. doi: 10.1021/nl073225h. Epub 2008 Jan 25.

PMID:
18217785
13.

Multibit MoS2 Photoelectronic Memory with Ultrahigh Sensitivity.

Lee D, Hwang E, Lee Y, Choi Y, Kim JS, Lee S, Cho JH.

Adv Mater. 2016 Nov;28(41):9196-9202. doi: 10.1002/adma.201603571. Epub 2016 Aug 26.

PMID:
27562539
14.

Thiepin-fused heteroacenes: simple synthesis, unusual structure, and semiconductors with less anisotropic behavior.

Cai Z, Zhang H, Geng H, Liu Z, Yang S, Luo H, Jiang L, Peng Q, Zhang G, Chen J, Yi Y, Hu W, Zhang D.

Chemistry. 2013 Oct 18;19(43):14573-80. doi: 10.1002/chem.201302114. Epub 2013 Sep 17.

PMID:
24105874
15.

Synthesis, Physical Properties and Memory Device Application of a Twelve-Ring Fused Twistheteroacene.

Duan J, Gu PY, Xiao J, Shen X, Liu X, Yi Y, Zhang Q.

Chem Asian J. 2017 Mar 16;12(6):638-642. doi: 10.1002/asia.201700048. Epub 2017 Feb 17.

PMID:
28117935
16.

Nonvolatile write-once-read-many times memory devices based on the composites of poly(4-vinylphenol)/Vulcan XC-72.

Song S, Kim TW, Cho B, Ji Y, Lee T.

J Nanosci Nanotechnol. 2011 May;11(5):4492-5.

PMID:
21780484
17.

A pyrene-fused N-heteroacene with eleven rectilinearly annulated aromatic rings.

Kohl B, Rominger F, Mastalerz M.

Angew Chem Int Ed Engl. 2015 May 11;54(20):6051-6. doi: 10.1002/anie.201411972. Epub 2015 Mar 27.

PMID:
25820770
18.

Improving the characteristics of an organic nano floating gate memory by a self-assembled monolayer.

Chang HC, Lee WY, Tai Y, Wu KW, Chen WC.

Nanoscale. 2012 Oct 21;4(20):6629-36.

PMID:
22983559
19.

Nitrogen and oxygen bridged calixaromatics: synthesis, structure, functionalization, and molecular recognition.

Wang MX.

Acc Chem Res. 2012 Feb 21;45(2):182-95. doi: 10.1021/ar200108c. Epub 2011 Aug 11.

PMID:
21834499
20.

Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistor.

Sohn JI, Choi SS, Morris SM, Bendall JS, Coles HJ, Hong WK, Jo G, Lee T, Welland ME.

Nano Lett. 2010 Nov 10;10(11):4316-20. doi: 10.1021/nl1013713.

PMID:
20945844

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