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Items: 1 to 20 of 281

1.

ZnSe nanowire/Si p-n heterojunctions: device construction and optoelectronic applications.

Zhang X, Zhang X, Wang L, Wu Y, Wang Y, Gao P, Han Y, Jie J.

Nanotechnology. 2013 Oct 4;24(39):395201. doi: 10.1088/0957-4484/24/39/395201. Epub 2013 Sep 6.

PMID:
24013310
2.

Organic nanowire/crystalline silicon p-n heterojunctions for high-sensitivity, broadband photodetectors.

Deng W, Jie J, Shang Q, Wang J, Zhang X, Yao S, Zhang Q, Zhang X.

ACS Appl Mater Interfaces. 2015 Jan 28;7(3):2039-45. doi: 10.1021/am5079144. Epub 2015 Jan 15.

PMID:
25545887
3.

Construction of high-quality CdS:Ga nanoribbon/silicon heterojunctions and their nano-optoelectronic applications.

Wu D, Jiang Y, Li S, Li F, Li J, Lan X, Zhang Y, Wu C, Luo L, Jie J.

Nanotechnology. 2011 Oct 7;22(40):405201. doi: 10.1088/0957-4484/22/40/405201. Epub 2011 Sep 7.

PMID:
21896984
4.

Self-powered ultrafast broadband photodetector based on p-n heterojunctions of CuO/Si nanowire array.

Hong Q, Cao Y, Xu J, Lu H, He J, Sun JL.

ACS Appl Mater Interfaces. 2014 Dec 10;6(23):20887-94. doi: 10.1021/am5054338. Epub 2014 Nov 21.

PMID:
25383662
5.

Enhanced current rectification and self-powered photoresponse in multilayer p-MoTe2/n-MoS2 van der Waals heterojunctions.

Wang B, Yang S, Wang C, Wu M, Huang L, Liu Q, Jiang C.

Nanoscale. 2017 Aug 3;9(30):10733-10740. doi: 10.1039/c7nr03445h.

PMID:
28715037
6.

Tuning the electrical transport properties of n-type CdS nanowires via Ga doping and their nano-optoelectronic applications.

Cai J, Jie J, Jiang P, Wu D, Xie C, Wu C, Wang Z, Yu Y, Wang L, Zhang X, Peng Q, Jiang Y.

Phys Chem Chem Phys. 2011 Aug 28;13(32):14663-7. doi: 10.1039/c1cp21104h. Epub 2011 Jun 28.

PMID:
21709907
7.

Fabrication of p-type ZnSe:Sb nanowires for high-performance ultraviolet light photodetector application.

Nie B, Luo LB, Chen JJ, Hu JG, Wu CY, Wang L, Yu YQ, Zhu ZF, Jie JS.

Nanotechnology. 2013 Mar 8;24(9):095603. doi: 10.1088/0957-4484/24/9/095603. Epub 2013 Feb 12.

PMID:
23403941
8.

Fabrication of n-type ZnO nanowire/graphene/p-type silicon hybrid structures and electrical properties of heterojunctions.

Liang Z, Cai X, Tan S, Yang P, Zhang L, Yu X, Chen K, Zhu H, Liu P, Mai W.

Phys Chem Chem Phys. 2012 Dec 14;14(46):16111-4. doi: 10.1039/c2cp43453a.

PMID:
23108069
9.

Vertical nanowire heterojunction devices based on a clean Si/Ge interface.

Chen L, Fung WY, Lu W.

Nano Lett. 2013;13(11):5521-7. doi: 10.1021/nl403112a. Epub 2013 Oct 21.

PMID:
24134685
10.

Direct heteroepitaxy of vertical InAs nanowires on Si substrates for broad band photovoltaics and photodetection.

Wei W, Bao XY, Soci C, Ding Y, Wang ZL, Wang D.

Nano Lett. 2009 Aug;9(8):2926-34. doi: 10.1021/nl901270n.

PMID:
19624100
11.

A facile route to Si nanowire gate-all-around field effect transistors with a steep subthreshold slope.

Lee JH, Kim BS, Choi SH, Jang Y, Hwang SW, Whang D.

Nanoscale. 2013 Oct 7;5(19):8968-72. doi: 10.1039/c3nr02552g. Epub 2013 Aug 22.

PMID:
23969942
13.

Silicon nanowire-silver indium selenide heterojunction photodiodes.

Kulakci M, Colakoglu T, Ozdemir B, Parlak M, Unalan HE, Turan R.

Nanotechnology. 2013 Sep 20;24(37):375203. doi: 10.1088/0957-4484/24/37/375203. Epub 2013 Aug 23.

PMID:
23975141
14.

Fast gate-tunable photodetection in the graphene sandwiched WSe2/GaSe heterojunctions.

Wei X, Yan F, Lv Q, Shen C, Wang K.

Nanoscale. 2017 Jun 22;9(24):8388-8392. doi: 10.1039/c7nr03124f.

PMID:
28598471
15.

Blueshift of electroluminescence from single n-InP nanowire/p-Si heterojunctions due to the Burstein-Moss effect.

Liu C, Dai L, You LP, Xu WJ, Qin GG.

Nanotechnology. 2008 Nov 19;19(46):465203. doi: 10.1088/0957-4484/19/46/465203. Epub 2008 Oct 21.

PMID:
21836237
16.
17.

High-Performance MoS2/CuO Nanosheet-on-One-Dimensional Heterojunction Photodetectors.

Um DS, Lee Y, Lim S, Park S, Lee H, Ko H.

ACS Appl Mater Interfaces. 2016 Dec 14;8(49):33955-33962. Epub 2016 Dec 5.

PMID:
27960400
18.

Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization.

Kabra V, Aamir L, Malik MM.

Beilstein J Nanotechnol. 2014 Nov 24;5:2216-21. doi: 10.3762/bjnano.5.230. eCollection 2014.

19.

Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p-n heterojunctions.

Wang C, Yang S, Xiong W, Xia C, Cai H, Chen B, Wang X, Zhang X, Wei Z, Tongay S, Li J, Liu Q.

Phys Chem Chem Phys. 2016 Oct 12;18(40):27750-27753.

PMID:
27711489
20.

Design principles for photovoltaic devices based on Si nanowires with axial or radial p-n junctions.

Christesen JD, Zhang X, Pinion CW, Celano TA, Flynn CJ, Cahoon JF.

Nano Lett. 2012 Nov 14;12(11):6024-9. doi: 10.1021/nl303610m. Epub 2012 Oct 17.

PMID:
23066872

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