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Items: 1 to 20 of 292

1.

High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits.

Song HS, Li SL, Gao L, Xu Y, Ueno K, Tang J, Cheng YB, Tsukagoshi K.

Nanoscale. 2013 Oct 21;5(20):9666-70. doi: 10.1039/c3nr01899g.

PMID:
23989804
2.

Tin disulfide-an emerging layered metal dichalcogenide semiconductor: materials properties and device characteristics.

Huang Y, Sutter E, Sadowski JT, Cotlet M, Monti OL, Racke DA, Neupane MR, Wickramaratne D, Lake RK, Parkinson BA, Sutter P.

ACS Nano. 2014 Oct 28;8(10):10743-55. doi: 10.1021/nn504481r. Epub 2014 Sep 29.

PMID:
25247490
3.

Impact of Contact on the Operation and Performance of Back-Gated Monolayer MoS2 Field-Effect-Transistors.

Liu W, Sarkar D, Kang J, Cao W, Banerjee K.

ACS Nano. 2015 Aug 25;9(8):7904-12. doi: 10.1021/nn506512j. Epub 2015 Aug 3.

PMID:
26039221
4.

Flexible logic gates composed of high performance GaAs-nanowire-based MESFETs with MHz-dynamic operations.

Yoon C, Moon T, Lee M, Cho G, Kim S.

Nanotechnology. 2011 Nov 18;22(46):465202. doi: 10.1088/0957-4484/22/46/465202. Epub 2011 Oct 27.

PMID:
22032860
5.

MoS2 transistors operating at gigahertz frequencies.

Krasnozhon D, Lembke D, Nyffeler C, Leblebici Y, Kis A.

Nano Lett. 2014 Oct 8;14(10):5905-11. doi: 10.1021/nl5028638. Epub 2014 Sep 22.

PMID:
25243885
6.

Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors.

Liu W, Kang J, Sarkar D, Khatami Y, Jena D, Banerjee K.

Nano Lett. 2013 May 8;13(5):1983-90. doi: 10.1021/nl304777e. Epub 2013 Apr 4.

PMID:
23527483
7.

Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures.

Lee GH, Yu YJ, Cui X, Petrone N, Lee CH, Choi MS, Lee DY, Lee C, Yoo WJ, Watanabe K, Taniguchi T, Nuckolls C, Kim P, Hone J.

ACS Nano. 2013 Sep 24;7(9):7931-6. doi: 10.1021/nn402954e. Epub 2013 Aug 14.

PMID:
23924287
8.

Highly Flexible Hybrid CMOS Inverter Based on Si Nanomembrane and Molybdenum Disulfide.

Das T, Chen X, Jang H, Oh IK, Kim H, Ahn JH.

Small. 2016 Nov;12(41):5720-5727. doi: 10.1002/smll.201602101. Epub 2016 Sep 8.

PMID:
27608439
9.

Single-layer MoS2 electronics.

Lembke D, Bertolazzi S, Kis A.

Acc Chem Res. 2015 Jan 20;48(1):100-10. doi: 10.1021/ar500274q. Epub 2015 Jan 2.

PMID:
25555202
10.

Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films.

Liu H, Si M, Najmaei S, Neal AT, Du Y, Ajayan PM, Lou J, Ye PD.

Nano Lett. 2013 Jun 12;13(6):2640-6. doi: 10.1021/nl400778q. Epub 2013 May 20.

PMID:
23679044
11.

Complementary symmetry nanowire logic circuits: experimental demonstrations and in silico optimizations.

Sheriff BA, Wang D, Heath JR, Kurtin JN.

ACS Nano. 2008 Sep 23;2(9):1789-98. doi: 10.1021/nn800025q.

PMID:
19206417
12.

Integrated circuits and logic operations based on single-layer MoS2.

Radisavljevic B, Whitwick MB, Kis A.

ACS Nano. 2011 Dec 27;5(12):9934-8. doi: 10.1021/nn203715c. Epub 2011 Nov 10. Erratum in: ACS Nano. 2013 Apr 23;7(4):3729.

PMID:
22073905
13.

Flexible black phosphorus ambipolar transistors, circuits and AM demodulator.

Zhu W, Yogeesh MN, Yang S, Aldave SH, Kim JS, Sonde S, Tao L, Lu N, Akinwande D.

Nano Lett. 2015 Mar 11;15(3):1883-90. doi: 10.1021/nl5047329. Epub 2015 Mar 2.

PMID:
25715122
14.

Fabrication and electrical properties of MoS2 nanodisc-based back-gated field effect transistors.

Gu W, Shen J, Ma X.

Nanoscale Res Lett. 2014 Feb 28;9(1):100. doi: 10.1186/1556-276X-9-100.

15.

High-Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions.

Liu B, Ma Y, Zhang A, Chen L, Abbas AN, Liu Y, Shen C, Wan H, Zhou C.

ACS Nano. 2016 May 24;10(5):5153-60. doi: 10.1021/acsnano.6b00527. Epub 2016 May 9.

PMID:
27159780
16.

Toward printed integrated circuits based on unipolar or ambipolar polymer semiconductors.

Baeg KJ, Caironi M, Noh YY.

Adv Mater. 2013 Aug 21;25(31):4210-44. doi: 10.1002/adma.201205361. Epub 2013 Jun 12.

PMID:
23761043
17.

Low-Voltage and High-Performance Multilayer MoS2 Field-Effect Transistors with Graphene Electrodes.

Singh AK, Hwang C, Eom J.

ACS Appl Mater Interfaces. 2016 Dec 21;8(50):34699-34705. doi: 10.1021/acsami.6b12217. Epub 2016 Dec 7.

PMID:
27998114
18.

Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiO(x) van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed.

Lee HS, Baik SS, Lee K, Min SW, Jeon PJ, Kim JS, Choi K, Choi HJ, Kim JH, Im S.

ACS Nano. 2015 Aug 25;9(8):8312-20. doi: 10.1021/acsnano.5b02785. Epub 2015 Jul 21.

PMID:
26169189
19.

Effect of Al2O3 Deposition on Performance of Top-Gated Monolayer MoS2-Based Field Effect Transistor.

Song JG, Kim SJ, Woo WJ, Kim Y, Oh IK, Ryu GH, Lee Z, Lim JH, Park J, Kim H.

ACS Appl Mater Interfaces. 2016 Oct 4. [Epub ahead of print]

PMID:
27681666
20.

Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics.

Yu L, El-Damak D, Radhakrishna U, Ling X, Zubair A, Lin Y, Zhang Y, Chuang MH, Lee YH, Antoniadis D, Kong J, Chandrakasan A, Palacios T.

Nano Lett. 2016 Oct 12;16(10):6349-6356. Epub 2016 Sep 28.

PMID:
27633942

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