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Items: 1 to 20 of 128

1.

Sensing extremely limited Hâ‚‚ contents by Pd nanogap connected to an amorphous InGaZnO thin-film transistor.

Lee YT, Jung H, Nam SH, Jeon PJ, Kim JS, Jang B, Lee W, Im S.

Nanoscale. 2013 Oct 7;5(19):8915-20. doi: 10.1039/c3nr01847d. Epub 2013 Aug 14.

PMID:
23942638
2.

Effective mobility enhancement by using nanometer dot doping in amorphous IGZO thin-film transistors.

Zan HW, Tsai WW, Chen CH, Tsai CC.

Adv Mater. 2011 Oct 4;23(37):4237-42. doi: 10.1002/adma.201102530. Epub 2011 Aug 11. No abstract available.

PMID:
21833994
3.

Electrical responses of artificial DNA nanostructures on solution-processed In-Ga-Zn-O thin-film transistors with multistacked active layers.

Jung J, Kim SJ, Yoon DH, Kim B, Park SH, Kim HJ.

ACS Appl Mater Interfaces. 2013 Jan;5(1):98-102. doi: 10.1021/am302210g. Epub 2012 Dec 14.

PMID:
23211212
4.

Nanometer-scale oxide thin film transistor with potential for high-density image sensor applications.

Jeon S, Park S, Song I, Hur JH, Park J, Kim H, Kim S, Kim S, Yin H, Chung UI, Lee E, Kim C.

ACS Appl Mater Interfaces. 2011 Jan;3(1):1-6. doi: 10.1021/am1009088. Epub 2010 Dec 20.

PMID:
21171647
5.

Negative gate bias and light illumination-induced hump in amorphous InGaZnO thin film transistor.

Jeon JH, Seo SB, Park HS, Choe HH, Seo JH, Park KC, Park SH.

J Nanosci Nanotechnol. 2013 Nov;13(11):7535-9.

PMID:
24245287
6.

Material and sensing properties of Pd-deposited WO3 thin films.

Choi G, Jin G, Park SH, Lee W, Park J.

J Nanosci Nanotechnol. 2007 Nov;7(11):3841-6.

PMID:
18047071
7.

High-performance flexible transparent thin-film transistors using a hybrid gate dielectric and an amorphous zinc indium tin oxide channel.

Liu J, Buchholz DB, Chang RP, Facchetti A, Marks TJ.

Adv Mater. 2010 Jun 4;22(21):2333-7. doi: 10.1002/adma.200903761. No abstract available.

PMID:
20491089
8.

IGZO thin film transistor biosensors functionalized with ZnO nanorods and antibodies.

Shen YC, Yang CH, Chen SW, Wu SH, Yang TL, Huang JJ.

Biosens Bioelectron. 2014 Apr 15;54:306-10. doi: 10.1016/j.bios.2013.10.043. Epub 2013 Nov 12.

PMID:
24291267
9.

Tungsten oxide as a gate dielectric for highly transparent and temperature-stable zinc-oxide-based thin-film transistors.

Lorenz M, von Wenckstern H, Grundmann M.

Adv Mater. 2011 Dec 1;23(45):5383-6. doi: 10.1002/adma.201103087. Epub 2011 Oct 14.

PMID:
21997566
10.

All-amorphous-oxide transparent, flexible thin-film transistors. Efficacy of bilayer gate dielectrics.

Liu J, Buchholz DB, Hennek JW, Chang RP, Facchetti A, Marks TJ.

J Am Chem Soc. 2010 Sep 1;132(34):11934-42. doi: 10.1021/ja9103155.

PMID:
20698566
11.

Highly stable transparent amorphous oxide semiconductor thin-film transistors having double-stacked active layers.

Park JC, Kim S, Kim S, Kim C, Song I, Park Y, Jung UI, Kim DH, Lee JS.

Adv Mater. 2010 Dec 21;22(48):5512-6. doi: 10.1002/adma.201002397. No abstract available.

PMID:
20972978
12.

Microwave annealing effect for highly reliable biosensor: dual-gate ion-sensitive field-effect transistor using amorphous InGaZnO thin-film transistor.

Lee IK, Lee KH, Lee S, Cho WJ.

ACS Appl Mater Interfaces. 2014 Dec 24;6(24):22680-6. doi: 10.1021/am506805a. Epub 2014 Dec 11.

PMID:
25456792
13.

Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors.

Jeong S, Ha YG, Moon J, Facchetti A, Marks TJ.

Adv Mater. 2010 Mar 26;22(12):1346-50. doi: 10.1002/adma.200902450. No abstract available.

PMID:
20437479
14.

Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer.

Zan HW, Yeh CC, Meng HF, Tsai CC, Chen LH.

Adv Mater. 2012 Jul 10;24(26):3509-14. doi: 10.1002/adma.201200683. Epub 2012 Jun 8.

PMID:
22678659
15.

Water-soluble thin film transistors and circuits based on amorphous indium-gallium-zinc oxide.

Jin SH, Kang SK, Cho IT, Han SY, Chung HU, Lee DJ, Shin J, Baek GW, Kim TI, Lee JH, Rogers JA.

ACS Appl Mater Interfaces. 2015 Apr 22;7(15):8268-74. doi: 10.1021/acsami.5b00086. Epub 2015 Apr 10.

PMID:
25805699
16.

Low-Voltage InGaZnO Thin Film Transistors with Small Sub-Threshold Swing.

Cheng CH, Chou KI, Hsu HH.

J Nanosci Nanotechnol. 2015 Feb;15(2):1486-9.

PMID:
26353677
17.

Hydrogen gas sensing properties of PdO thin films with nano-sized cracks.

Lee YT, Lee JM, Kim YJ, Joe JH, Lee W.

Nanotechnology. 2010 Apr 23;21(16):165503. doi: 10.1088/0957-4484/21/16/165503. Epub 2010 Mar 26.

PMID:
20348599
18.

Fabrication of one-transistor-capacitor structure of nonvolatile TFT ferroelectric RAM devices using Ba(Zr0.1Ti0.9)O3 gated oxide film.

Yang CF, Chen KH, Chen YC, Chang TC.

IEEE Trans Ultrason Ferroelectr Freq Control. 2007 Sep;54(9):1726-30.

PMID:
17941379
19.

Toward active-matrix lab-on-a-chip: programmable electrofluidic control enabled by arrayed oxide thin film transistors.

Noh JH, Noh J, Kreit E, Heikenfeld J, Rack PD.

Lab Chip. 2012 Jan 21;12(2):353-60. doi: 10.1039/c1lc20851a. Epub 2011 Dec 1.

PMID:
22134753
20.

Regiospecific linear assembly of Pd nanocubes for hydrogen gas sensing.

Zou J, Zdyrko B, Luzinov I, Raston CL, Iyer KS.

Chem Commun (Camb). 2012 Jan 25;48(7):1033-5. doi: 10.1039/c1cc15522a. Epub 2011 Dec 8.

PMID:
22158694

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