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Items: 1 to 20 of 105

1.

Thickness-dependent interfacial Coulomb scattering in atomically thin field-effect transistors.

Li SL, Wakabayashi K, Xu Y, Nakaharai S, Komatsu K, Li WW, Lin YF, Aparecido-Ferreira A, Tsukagoshi K.

Nano Lett. 2013 Aug 14;13(8):3546-52. doi: 10.1021/nl4010783. Epub 2013 Jul 22.

PMID:
23862641
2.

Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors.

Li SL, Tsukagoshi K, Orgiu E, Samorì P.

Chem Soc Rev. 2016 Jan 7;45(1):118-51. doi: 10.1039/c5cs00517e. Review.

PMID:
26593874
3.

Suppression of Interfacial Current Fluctuation in MoTe2 Transistors with Different Dielectrics.

Ji H, Joo MK, Yun Y, Park JH, Lee G, Moon BH, Yi H, Suh D, Lim SC.

ACS Appl Mater Interfaces. 2016 Jul 27;8(29):19092-9. doi: 10.1021/acsami.6b02085. Epub 2016 Jul 15.

PMID:
27362461
4.

Transport properties of unrestricted carriers in bridge-channel MoS2 field-effect transistors.

Qiu D, Lee DU, Park CS, Lee KS, Kim EK.

Nanoscale. 2015 Nov 7;7(41):17556-62. doi: 10.1039/c5nr04397b.

PMID:
26446693
5.

Back gated multilayer InSe transistors with enhanced carrier mobilities via the suppression of carrier scattering from a dielectric interface.

Feng W, Zheng W, Cao W, Hu P.

Adv Mater. 2014 Oct;26(38):6587-93. doi: 10.1002/adma.201402427. Epub 2014 Aug 28.

PMID:
25167845
6.

Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform.

Cui X, Lee GH, Kim YD, Arefe G, Huang PY, Lee CH, Chenet DA, Zhang X, Wang L, Ye F, Pizzocchero F, Jessen BS, Watanabe K, Taniguchi T, Muller DA, Low T, Kim P, Hone J.

Nat Nanotechnol. 2015 Jun;10(6):534-40. doi: 10.1038/nnano.2015.70. Epub 2015 Apr 27.

PMID:
25915194
7.

Understanding Coulomb Scattering Mechanism in Monolayer MoS2 Channel in the Presence of h-BN Buffer Layer.

Joo MK, Moon BH, Ji H, Han GH, Kim H, Lee G, Lim SC, Suh D, Lee YH.

ACS Appl Mater Interfaces. 2017 Feb 8;9(5):5006-5013. doi: 10.1021/acsami.6b15072. Epub 2017 Jan 30.

PMID:
28093916
8.

Uncovering edge states and electrical inhomogeneity in MoS2 field-effect transistors.

Wu D, Li X, Luan L, Wu X, Li W, Yogeesh MN, Ghosh R, Chu Z, Akinwande D, Niu Q, Lai K.

Proc Natl Acad Sci U S A. 2016 Aug 2;113(31):8583-8. doi: 10.1073/pnas.1605982113. Epub 2016 Jul 21.

9.

n-Channel semiconductor materials design for organic complementary circuits.

Usta H, Facchetti A, Marks TJ.

Acc Chem Res. 2011 Jul 19;44(7):501-10. doi: 10.1021/ar200006r. Epub 2011 May 26.

PMID:
21615105
10.

Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates.

Chan MY, Komatsu K, Li SL, Xu Y, Darmawan P, Kuramochi H, Nakaharai S, Aparecido-Ferreira A, Watanabe K, Taniguchi T, Tsukagoshi K.

Nanoscale. 2013 Oct 21;5(20):9572-6. doi: 10.1039/c3nr03220e.

PMID:
23986323
11.

Laser-Induced Particle Adsorption on Atomically Thin MoS2.

Tran Khac BC, Jeon KJ, Choi ST, Kim YS, DelRio FW, Chung KH.

ACS Appl Mater Interfaces. 2016 Feb 10;8(5):2974-84. doi: 10.1021/acsami.5b09382. Epub 2016 Feb 1.

PMID:
26795729
12.

Electron tunneling through ultrathin boron nitride crystalline barriers.

Britnell L, Gorbachev RV, Jalil R, Belle BD, Schedin F, Katsnelson MI, Eaves L, Morozov SV, Mayorov AS, Peres NM, Neto AH, Leist J, Geim AK, Ponomarenko LA, Novoselov KS.

Nano Lett. 2012 Mar 14;12(3):1707-10. doi: 10.1021/nl3002205. Epub 2012 Mar 1.

PMID:
22380756
13.

Thickness-dependent mobility in two-dimensional MoS₂ transistors.

Lembke D, Allain A, Kis A.

Nanoscale. 2015 Apr 14;7(14):6255-60. doi: 10.1039/c4nr06331g.

PMID:
25779345
14.

Exploring the energy landscape of the charge transport levels in organic semiconductors at the molecular scale.

Cornil J, Verlaak S, Martinelli N, Mityashin A, Olivier Y, Van Regemorter T, D'Avino G, Muccioli L, Zannoni C, Castet F, Beljonne D, Heremans P.

Acc Chem Res. 2013 Feb 19;46(2):434-43. doi: 10.1021/ar300198p. Epub 2012 Nov 9.

PMID:
23140088
15.

Exploring carrier transport phenomena in a CVD-assembled graphene FET on hexagonal boron nitride.

Kim E, Jai N, Jacobs-Gedri R, Xu Y, Yu B.

Nanotechnology. 2012 Mar 30;23(12):125706. doi: 10.1088/0957-4484/23/12/125706.

PMID:
22414953
16.

Nature of electronic states in atomically thin MoS₂ field-effect transistors.

Ghatak S, Pal AN, Ghosh A.

ACS Nano. 2011 Oct 25;5(10):7707-12. doi: 10.1021/nn202852j. Epub 2011 Sep 19.

PMID:
21902203
17.

Dielectric screening enhanced performance in graphene FET.

Chen F, Xia J, Ferry DK, Tao N.

Nano Lett. 2009 Jul;9(7):2571-4. doi: 10.1021/nl900725u.

PMID:
19496554
18.

High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits.

Song HS, Li SL, Gao L, Xu Y, Ueno K, Tang J, Cheng YB, Tsukagoshi K.

Nanoscale. 2013 Oct 21;5(20):9666-70. doi: 10.1039/c3nr01899g.

PMID:
23989804
19.

High-performance, highly bendable MoS2 transistors with high-k dielectrics for flexible low-power systems.

Chang HY, Yang S, Lee J, Tao L, Hwang WS, Jena D, Lu N, Akinwande D.

ACS Nano. 2013 Jun 25;7(6):5446-52. doi: 10.1021/nn401429w. Epub 2013 May 15.

PMID:
23668386
20.

Improved carrier mobility in few-layer MoS2 field-effect transistors with ionic-liquid gating.

Perera MM, Lin MW, Chuang HJ, Chamlagain BP, Wang C, Tan X, Cheng MM, Tománek D, Zhou Z.

ACS Nano. 2013 May 28;7(5):4449-58. doi: 10.1021/nn401053g. Epub 2013 Apr 23.

PMID:
23590723

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