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Items: 1 to 20 of 174

1.

Improved photoluminescence efficiency in UV nanopillar light emitting diode structures by recovery of dry etching damage.

Jeon DW, Jang LW, Jeon JW, Park JW, Song YH, Jeon SR, Ju JW, Baek JH, Lee IH.

J Nanosci Nanotechnol. 2013 May;13(5):3645-9.

PMID:
23858920
2.

Synthesis and luminescence properties of NaSrPO4:Eu2+, Tb3+, Mn2+ for WLED.

Huang S, Chen Y, Wei X, Yin M.

J Nanosci Nanotechnol. 2014 Jun;14(6):4574-8.

PMID:
24738431
4.

Grain size dependence of surface plasmon enhanced photoluminescence.

Xu X, Funato M, Kawakami Y, Okamoto K, Tamada K.

Opt Express. 2013 Feb 11;21(3):3145-51. doi: 10.1364/OE.21.003145.

PMID:
23481773
5.

Optimization of the electroluminescence from SiNx-based light-emitting devices by modulating the size and morphology of silver nanostructures.

Wang F, Li D, Jin L, Ren C, Yang D, Que D.

Opt Express. 2013 Jan 28;21(2):1675-86. doi: 10.1364/OE.21.001675.

PMID:
23389153
6.

Tunable visible and near-IR emission from sub-10 nm etched single-crystal Si nanopillars.

Walavalkar SS, Hofmann CE, Homyk AP, Henry MD, Atwater HA, Scherer A.

Nano Lett. 2010 Nov 10;10(11):4423-8. doi: 10.1021/nl102140k. Epub 2010 Oct 4.

PMID:
20919695
7.
8.

A wafer-level integrated white-light-emitting diode incorporating colloidal quantum dots as a nanocomposite luminescent material.

Dang C, Lee J, Zhang Y, Han J, Breen C, Steckel JS, Coe-Sullivan S, Nurmikko A.

Adv Mater. 2012 Nov 20;24(44):5915-8. doi: 10.1002/adma.201202354. Epub 2012 Aug 24.

PMID:
22927319
9.

The role of reflective p-contacts in the enhancement of light extraction in nanotextured vertical InGaN light-emitting diodes.

Jang HW, Ryu SW, Yu HK, Lee S, Lee JL.

Nanotechnology. 2010 Jan 15;21(2):025203. doi: 10.1088/0957-4484/21/2/025203. Epub 2009 Dec 3.

PMID:
19955615
10.

Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands.

Wei T, Kong Q, Wang J, Li J, Zeng Y, Wang G, Li J, Liao Y, Yi F.

Opt Express. 2011 Jan 17;19(2):1065-71. doi: 10.1364/OE.19.001065.

PMID:
21263645
11.

'Giant' CdSe/CdS core/shell nanocrystal quantum dots as efficient electroluminescent materials: strong influence of shell thickness on light-emitting diode performance.

Pal BN, Ghosh Y, Brovelli S, Laocharoensuk R, Klimov VI, Hollingsworth JA, Htoon H.

Nano Lett. 2012 Jan 11;12(1):331-6. doi: 10.1021/nl203620f. Epub 2011 Dec 22.

PMID:
22148981
12.

Light extraction efficiency improvement by multiple laser stealth dicing in InGaN-based blue light-emitting diodes.

Zhang Y, Xie H, Zheng H, Wei T, Yang H, Li J, Yi X, Song X, Wang G, Li J.

Opt Express. 2012 Mar 12;20(6):6808-15. doi: 10.1364/OE.20.006808.

PMID:
22418563
13.

Optical properties of nanopillar AlGaN/GaN MQWs for ultraviolet light-emitting diodes.

Dong P, Yan J, Zhang Y, Wang J, Geng C, Zheng H, Wei X, Yan Q, Li J.

Opt Express. 2014 Mar 10;22 Suppl 2:A320-7. doi: 10.1364/OE.22.00A320.

PMID:
24922241
14.

Optical properties of nanopillar AlGaN/GaN MQWs for ultraviolet light-emitting diodes.

Dong P, Yan J, Zhang Y, Wang J, Geng C, Zheng H, Wei X, Yan Q, Li J.

Opt Express. 2014 Mar 10;22(5):A320-7.

PMID:
24800288
15.

Enhancement of light extraction efficiency of GaN-based light-emitting diodes by ZnO nanorods with different sizes.

Oh S, Shin KS, Kim SW, Lee S, Yu H, Cho S, Kim KK.

J Nanosci Nanotechnol. 2013 May;13(5):3696-9.

PMID:
23858930
16.

Excellent photostability of phosphorescent nanoparticles and their application as a color converter in light emitting diodes.

Kim OH, Ha SW, Kim JI, Lee JK.

ACS Nano. 2010 Jun 22;4(6):3397-405. doi: 10.1021/nn100139e.

PMID:
20481629
17.

Fabrication of 3D nano-structures using reverse imprint lithography.

Han KS, Hong SH, Kim KI, Cho JY, Choi KW, Lee H.

Nanotechnology. 2013 Feb 1;24(4):045304. doi: 10.1088/0957-4484/24/4/045304. Epub 2013 Jan 4.

PMID:
23291434
18.

Auger recombination in III-nitride nanowires and its effect on nanowire light-emitting diode characteristics.

Guo W, Zhang M, Bhattacharya P, Heo J.

Nano Lett. 2011 Apr 13;11(4):1434-8. doi: 10.1021/nl103649d. Epub 2011 Mar 2.

PMID:
21366223
19.

A hybrid fiber-optic photoluminescence measurement system and its application in InGaN/GaN light emitting diode epi-wafer morphology studies.

An S, Seo YG, Jung W, Park M, Park J, Kim J, Jeong Y, Oh K.

Opt Express. 2012 Aug 13;20(17):19535-44. doi: 10.1364/OE.20.019535.

PMID:
23038595
20.

Nitride-based micron-scale hexagonal pyramids array vertical light emitting diodes by N-polar wet etching.

Ma J, Wang L, Liu Z, Yuan G, Ji X, Ma P, Wang J, Yi X, Wang G, Li J.

Opt Express. 2013 Feb 11;21(3):3547-56. doi: 10.1364/OE.21.003547.

PMID:
23481812

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