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Items: 1 to 20 of 209

1.

Electrical characteristics of silicon nanowire transistors fabricated by scanning probe and electron beam lithographies.

Ryu YK, Chiesa M, Garcia R.

Nanotechnology. 2013 Aug 9;24(31):315205. doi: 10.1088/0957-4484/24/31/315205. Epub 2013 Jul 15.

PMID:
23857981
2.

Experimental study on the subthreshold swing of silicon nanowire transistors.

Zhang Y, Xiong Y, Yang X, Wang Y, Han W, Yang F.

J Nanosci Nanotechnol. 2010 Nov;10(11):7113-6.

PMID:
21137876
3.

Ultra-sensitive nucleic acids detection with electrical nanosensors based on CMOS-compatible silicon nanowire field-effect transistors.

Lu N, Gao A, Dai P, Li T, Wang Y, Gao X, Song S, Fan C, Wang Y.

Methods. 2013 Oct;63(3):212-8. doi: 10.1016/j.ymeth.2013.07.012. Epub 2013 Jul 22.

PMID:
23886908
4.

Top-down fabricated silicon nanowire sensors for real-time chemical detection.

Park I, Li Z, Pisano AP, Williams RS.

Nanotechnology. 2010 Jan 8;21(1):015501. doi: 10.1088/0957-4484/21/1/015501. Epub 2009 Nov 30.

PMID:
19946164
5.

Silicon nanowire transistors with a channel width of 4 nm fabricated by atomic force microscope nanolithography.

Martinez J, Martínez RV, Garcia R.

Nano Lett. 2008 Nov;8(11):3636-9. doi: 10.1021/nl801599k. Epub 2008 Oct 1.

PMID:
18826289
6.

Robust fabrication method for silicon nanowire field effect transistors for sensing applications.

Mescher M, de Smet LC, Sudhölter EJ, Klootwijk JH.

J Nanosci Nanotechnol. 2013 Aug;13(8):5649-53.

PMID:
23882811
7.

Hybrid Si nanowire/amorphous silicon FETs for large-area image sensor arrays.

Wong WS, Raychaudhuri S, Lujan R, Sambandan S, Street RA.

Nano Lett. 2011 Jun 8;11(6):2214-8. doi: 10.1021/nl200114h. Epub 2011 May 17.

PMID:
21591655
8.

Top-down fabricated silicon-nanowire-based field-effect transistor device on a (111) silicon wafer.

Yu X, Wang Y, Zhou H, Liu Y, Wang Y, Li T, Wang Y.

Small. 2013 Feb 25;9(4):525-30. doi: 10.1002/smll.201201599. Epub 2012 Nov 12.

PMID:
23143874
9.

Scanning photocurrent microscopy analysis of Si nanowire field-effect transistors fabricated by surface etching of the channel.

Allen JE, Hemesath ER, Lauhon LJ.

Nano Lett. 2009 May;9(5):1903-8. doi: 10.1021/nl803924z.

PMID:
19326918
10.

Silicon nanowire circuits fabricated by AFM oxidation nanolithography.

Martínez RV, Martínez J, Garcia R.

Nanotechnology. 2010 Jun 18;21(24):245301. doi: 10.1088/0957-4484/21/24/245301. Epub 2010 May 20.

PMID:
20484797
11.

Fabrication of silicon nanowire for detecting p-amyloid (1-42) by nanoimprint lithography.

Choi DS, Lee JH, Jung HS, Jung GY, Choi JH, Choi JW, Oh BK.

J Nanosci Nanotechnol. 2011 May;11(5):4517-21.

PMID:
21780489
12.

Ultrasensitive protein detection using lithographically defined Si multi-nanowire field effect transistors.

Tian R, Regonda S, Gao J, Liu Y, Hu W.

Lab Chip. 2011 Jun 7;11(11):1952-61. doi: 10.1039/c0lc00605j. Epub 2011 Apr 19.

PMID:
21505681
13.

A CMOS-compatible poly-Si nanowire device with hybrid sensor/memory characteristics for System-on-Chip applications.

Chen MC, Chen HY, Lin CY, Chien CH, Hsieh TF, Horng JT, Qiu JT, Huang CC, Ho CH, Yang FL.

Sensors (Basel). 2012;12(4):3952-63. doi: 10.3390/s120403952. Epub 2012 Mar 26.

14.

The large-scale integration of high-performance silicon nanowire field effect transistors.

Li Q, Zhu X, Yang Y, Ioannou DE, Xiong HD, Kwon DW, Suehle JS, Richter CA.

Nanotechnology. 2009 Oct 14;20(41):415202. doi: 10.1088/0957-4484/20/41/415202. Epub 2009 Sep 16.

PMID:
19755723
15.

Top-down fabrication of fully CMOS-compatible silicon nanowire arrays and their integration into CMOS Inverters on plastic.

Lee M, Jeon Y, Moon T, Kim S.

ACS Nano. 2011 Apr 26;5(4):2629-36. doi: 10.1021/nn102594d. Epub 2011 Mar 15.

PMID:
21355599
16.

Silicon nanowire biologically sensitive field effect transistors: electrical characteristics and applications.

Rim T, Baek CK, Kim K, Jeong YH, Lee JS, Meyyappan M.

J Nanosci Nanotechnol. 2014 Jan;14(1):273-87. Review.

PMID:
24730263
17.

Single InAs/GaSb nanowire low-power CMOS inverter.

Dey AW, Svensson J, Borg BM, Ek M, Wernersson LE.

Nano Lett. 2012 Nov 14;12(11):5593-7. doi: 10.1021/nl302658y. Epub 2012 Oct 8.

PMID:
23043243
18.

CMOS-compatible, label-free silicon-nanowire biosensors to detect cardiac troponin I for acute myocardial infarction diagnosis.

Kong T, Su R, Zhang B, Zhang Q, Cheng G.

Biosens Bioelectron. 2012 Apr 15;34(1):267-72. doi: 10.1016/j.bios.2012.02.019. Epub 2012 Feb 19.

PMID:
22386490
19.

Comparison between the electrical properties of ZnO nanowires based field effect transistors fabricated by back- and top-gate approaches.

Park YK, Umar A, Kim SH, Kim JH, Lee EW, Vaseem M, Hahn YB.

J Nanosci Nanotechnol. 2008 Nov;8(11):6010-6.

PMID:
19198339
20.

In situ axially doped n-channel silicon nanowire field-effect transistors.

Ho TT, Wang Y, Eichfeld S, Lew KK, Liu B, Mohney SE, Redwing JM, Mayer TS.

Nano Lett. 2008 Dec;8(12):4359-64. doi: 10.1021/nl8022059.

PMID:
19367848

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