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Items: 1 to 20 of 115

1.

Design and simulation of GaN based Schottky betavoltaic nuclear micro-battery.

San H, Yao S, Wang X, Cheng Z, Chen X.

Appl Radiat Isot. 2013 Oct;80:17-22. doi: 10.1016/j.apradiso.2013.05.010. Epub 2013 Jun 4.

PMID:
23800650
2.

Investigation on a radiation tolerant betavoltaic battery based on Schottky barrier diode.

Liu Y, Hu R, Yang Y, Wang G, Luo S, Liu N.

Appl Radiat Isot. 2012 Mar;70(3):438-41. doi: 10.1016/j.apradiso.2011.10.013. Epub 2011 Nov 18.

PMID:
22119560
3.

Prediction of 4H-SiC betavoltaic microbattery characteristics based on practical Ni-63 sources.

Gui G, Zhang K, Blanchard JP, Ma Z.

Appl Radiat Isot. 2016 Jan;107:272-7. doi: 10.1016/j.apradiso.2015.11.001. Epub 2015 Nov 6.

PMID:
26583261
4.

Design and simulation of betavoltaic battery using large-grain polysilicon.

Yao S, Song Z, Wang X, San H, Yu Y.

Appl Radiat Isot. 2012 Oct;70(10):2388-94. doi: 10.1016/j.apradiso.2012.06.009. Epub 2012 Jun 20.

PMID:
22871443
5.

Prediction of betavoltaic battery output parameters based on SEM measurements and Monte Carlo simulation.

Yakimov EB.

Appl Radiat Isot. 2016 Jun;112:98-102. doi: 10.1016/j.apradiso.2016.03.023. Epub 2016 Mar 21.

PMID:
27017084
6.

Metal contacts in nanocrystalline n-type GaN: Schottky diodes.

Das SN, Sarangi S, Sahu SN, Pal AK.

J Nanosci Nanotechnol. 2009 Apr;9(4):2532-9.

PMID:
19437998
7.

Enhanced Thermionic Emission and Low 1/f Noise in Exfoliated Graphene/GaN Schottky Barrier Diode.

Kumar A, Kashid R, Ghosh A, Kumar V, Singh R.

ACS Appl Mater Interfaces. 2016 Mar;8(12):8213-23. doi: 10.1021/acsami.5b12393. Epub 2016 Mar 17.

PMID:
26963627
8.

The determination of modified barrier heights in Ti/GaN nano-Schottky diodes at high temperature.

Lee SY, Kim TH, Chol NK, Seong HK, Choi HJ, Ahn BG, Lee SK.

J Nanosci Nanotechnol. 2008 Oct;8(10):5042-6.

PMID:
19198387
9.

A simple theoretical model for ⁶³Ni betavoltaic battery.

Zuo G, Zhou J, Ke G.

Appl Radiat Isot. 2013 Dec;82:119-25. doi: 10.1016/j.apradiso.2013.07.026. Epub 2013 Aug 8.

PMID:
23974307
10.

Interface gap states and Schottky barrier inhomogeneity at metal/n-type GaN Schottky contacts.

Mamor M.

J Phys Condens Matter. 2009 Aug 19;21(33):335802. doi: 10.1088/0953-8984/21/33/335802. Epub 2009 Jul 24.

PMID:
21828610
11.

Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale.

Fisichella G, Greco G, Roccaforte F, Giannazzo F.

Nanoscale. 2014 Aug 7;6(15):8671-80. doi: 10.1039/c4nr01150c.

PMID:
24946753
12.

Schottky barrier thin film transistors using solution-processed n-ZnO.

Adl AH, Ma A, Gupta M, Benlamri M, Tsui YY, Barlage DW, Shankar K.

ACS Appl Mater Interfaces. 2012 Mar;4(3):1423-8. doi: 10.1021/am201656h. Epub 2012 Mar 12.

PMID:
22387678
13.

Design and simulation of betavoltaic angle sensor Based on ⁶³Ni-Si.

Nejad GR, Rahmani F.

Appl Radiat Isot. 2016 Jan;107:346-52. doi: 10.1016/j.apradiso.2015.11.025. Epub 2015 Nov 14.

PMID:
26609684
14.

Simulations about self-absorption of tritium in titanium tritide and the energy deposition in a silicon Schottky barrier diode.

Li H, Liu Y, Hu R, Yang Y, Wang G, Zhong Z, Luo S.

Appl Radiat Isot. 2012 Nov;70(11):2559-63. doi: 10.1016/j.apradiso.2012.07.012. Epub 2012 Jul 25.

PMID:
22935439
15.

Current transport mechanism in a metal-GaN nanowire Schottky diode.

Lee SY, Lee SK.

Nanotechnology. 2007 Dec 12;18(49):495701. doi: 10.1088/0957-4484/18/49/495701. Epub 2007 Nov 2.

PMID:
20442482
16.

Energy harvesting efficiency in GaN nanowire-based nanogenerators: the critical influence of the Schottky nanocontact.

Jamond N, Chrétien P, Gatilova L, Galopin E, Travers L, Harmand JC, Glas F, Houzé F, Gogneau N.

Nanoscale. 2017 Mar 30;9(13):4610-4619. doi: 10.1039/c7nr00647k.

PMID:
28323294
17.

Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD.

Xu P, Jiang Y, Chen Y, Ma Z, Wang X, Deng Z, Li Y, Jia H, Wang W, Chen H.

Nanoscale Res Lett. 2012 Feb 20;7(1):141. doi: 10.1186/1556-276X-7-141.

18.

GaN nanorod Schottky and p-n junction diodes.

Deb P, Kim H, Qin Y, Lahiji R, Oliver M, Reifenberger R, Sands T.

Nano Lett. 2006 Dec;6(12):2893-8.

PMID:
17163726
19.

Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes.

Kumar A, Heilmann M, Latzel M, Kapoor R, Sharma I, Göbelt M, Christiansen SH, Kumar V, Singh R.

Sci Rep. 2016 Jun 10;6:27553. doi: 10.1038/srep27553.

20.

Microstructure evolution and development of annealed Ni/Au contacts to GaN nanowires.

Herrero AM, Blanchard PT, Sanders A, Brubaker MD, Sanford NA, Roshko A, Bertness KA.

Nanotechnology. 2012 Sep 14;23(36):365203. doi: 10.1088/0957-4484/23/36/365203. Epub 2012 Aug 21.

PMID:
22910019

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