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Items: 1 to 20 of 116

1.

Coherent vertical beaming using Bragg mirrors for high-efficiency GaN light-emitting diodes.

Kim SK, Park HG.

Opt Express. 2013 Jun 17;21(12):14566-72. doi: 10.1364/OE.21.014566.

PMID:
23787644
2.

High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters.

Kim SK, Lee JW, Ee HS, Moon YT, Kwon SH, Kwon H, Park HG.

Opt Express. 2010 May 24;18(11):11025-32. doi: 10.1364/OE.18.011025.

PMID:
20588958
3.

MQWs InGaN/GaN LED with embedded micro-mirror array in the epitaxial-lateral-overgrowth gallium nitride for light extraction enhancement.

Huang CY, Ku HM, Liao CZ, Chao S.

Opt Express. 2010 May 10;18(10):10674-84. doi: 10.1364/OE.18.010674.

PMID:
20588920
4.

High performance of InGaN light-emitting diodes by air-gap/GaN distributed Bragg reflectors.

Ryu JH, Kim HY, Kim HK, Katharria YS, Han N, Kang JH, Park YJ, Han M, Ryu BD, Ko KB, Suh EK, Hong CH.

Opt Express. 2012 Apr 23;20(9):9999-10003. doi: 10.1364/OE.20.009999.

PMID:
22535092
5.

Improvement of light extraction efficiency of GaN-based light-emitting diodes using Ag nanostructure and indium tin oxide grating.

Dang S, Li C, Jia W, Zhang Z, Li T, Han P, Xu B.

Opt Express. 2012 Oct 8;20(21):23290-9. doi: 10.1364/OE.20.023290.

PMID:
23188292
6.

Design of polarization-selective light emitters using one-dimensional metal grating mirror.

Ee HS, Kim SK, Kwon SH, Park HG.

Opt Express. 2011 Jan 17;19(2):1609-16. doi: 10.1364/OE.19.001609.

PMID:
21263700
7.

Azimuthally isotropic irradiance of GaN-based light-emitting diodes with GaN microlens arrays.

Wu ML, Lee YC, Yang SP, Lee PS, Chang JY.

Opt Express. 2009 Apr 13;17(8):6148-55.

PMID:
19365437
8.

Enhanced light output power of thin film GaN-based high voltage light-emitting diodes.

Tien CH, Chen KY, Hsu CP, Horng RH.

Opt Express. 2014 Oct 20;22 Suppl 6:A1462-8. doi: 10.1364/OE.22.0A1462.

PMID:
25607303
9.

Surface plasmon-enhanced nanoporous GaN-based green light-emitting diodes with Al2O3 passivation layer.

Yu ZG, Zhao LX, Wei XC, Sun XJ, An PB, Zhu SC, Liu L, Tian LX, Zhang F, Lu HX, Wang JX, Zeng YP, Li JM.

Opt Express. 2014 Oct 20;22 Suppl 6:A1596-603. doi: 10.1364/OE.22.0A1596.

PMID:
25607317
10.

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.

Kyaw Z, Zhang ZH, Liu W, Tan ST, Ju ZG, Zhang XL, Ji Y, Hasanov N, Zhu B, Lu S, Zhang Y, Sun XW, Demir HV.

Opt Express. 2014 Jan 13;22(1):809-16. doi: 10.1364/OE.22.000809.

PMID:
24515040
11.

Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO(2).

Cho CY, Lee JB, Lee SJ, Han SH, Park TY, Kim JW, Kim YC, Park SJ.

Opt Express. 2010 Jan 18;18(2):1462-8. doi: 10.1364/OE.18.001462.

PMID:
20173974
12.

Optimal overlayer inspired by Photuris firefly improves light-extraction efficiency of existing light-emitting diodes.

Bay A, André N, Sarrazin M, Belarouci A, Aimez V, Francis LA, Vigneron JP.

Opt Express. 2013 Jan 14;21 Suppl 1:A179-89. doi: 10.1364/OE.21.00A179.

PMID:
23389270
13.

Laser-induced periodic structures for light extraction efficiency enhancement of GaN-based light emitting diodes.

Chen JT, Lai WC, Kao YJ, Yang YY, Sheu JK.

Opt Express. 2012 Feb 27;20(5):5689-95. doi: 10.1364/OE.20.005689.

PMID:
22418376
14.

An improvement of light extraction efficiency for GaN-based light emitting diodes by selective etched nanorods in periodic microholes.

Kim SH, Park HH, Song YH, Park HJ, Kim JB, Jeon SR, Jeong H, Jeong MS, Yang GM.

Opt Express. 2013 Mar 25;21(6):7125-30. doi: 10.1364/OE.21.007125.

PMID:
23546094
15.

Highly reliable Ag/Zn/Ag ohmic reflector for high-power GaN-based vertical light-emitting diode.

Yum WS, Jeon JW, Sung JS, Seong TY.

Opt Express. 2012 Aug 13;20(17):19194-9. doi: 10.1364/OE.20.019194.

PMID:
23038560
16.

Enhancement of light extraction efficiency of GaN-based light-emitting diodes by ZnO nanorods with different sizes.

Oh S, Shin KS, Kim SW, Lee S, Yu H, Cho S, Kim KK.

J Nanosci Nanotechnol. 2013 May;13(5):3696-9.

PMID:
23858930
17.

Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface.

Sun B, Zhao L, Wei T, Yi X, Liu Z, Wang G, Li J, Yi F.

Opt Express. 2012 Aug 13;20(17):18537-44. doi: 10.1364/OE.20.018537.

PMID:
23038492
18.

Optical properties of light emitting diodes with a cascading plasmonic grating.

Wang CM, Tsai YL, Tu SH, Lee CC, Kuo CH, Chang JY.

Opt Express. 2010 Dec 6;18(25):25608-14. doi: 10.1364/OE.18.025608.

PMID:
21164906
19.

Enhanced light out-coupling of organic light-emitting diodes: spontaneously formed nanofacet-structured MgO as a refractive index modulation layer.

Hong K, Yu HK, Lee I, Kim K, Kim S, Lee JL.

Adv Mater. 2010 Nov 16;22(43):4890-4. doi: 10.1002/adma.201002028. No abstract available.

PMID:
20839251
20.

Heat resistive dielectric multi-layer micro-mirror array in epitaxial lateral overgrowth gallium nitride.

Huang CY, Ku HM, Liao WT, Chao CL, Tsay JD, Chao S.

Opt Express. 2009 Mar 30;17(7):5624-9.

PMID:
19333330

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