Format
Sort by
Items per page

Send to

Choose Destination

Links from PubMed

Items: 1 to 20 of 90

1.

Anelastic behavior in GaAs semiconductor nanowires.

Chen B, Gao Q, Wang Y, Liao X, Mai YW, Tan HH, Zou J, Ringer SP, Jagadish C.

Nano Lett. 2013 Jul 10;13(7):3169-72. doi: 10.1021/nl401175t. Epub 2013 Jun 13.

PMID:
23755996
2.

Large anelasticity and associated energy dissipation in single-crystalline nanowires.

Cheng G, Miao C, Qin Q, Li J, Xu F, Haftbaradaran H, Dickey EC, Gao H, Zhu Y.

Nat Nanotechnol. 2015 Aug;10(8):687-91. doi: 10.1038/nnano.2015.135. Epub 2015 Jul 13.

PMID:
26167767
3.

Planar GaAs nanowires on GaAs (100) substrates: self-aligned, nearly twin-defect free, and transfer-printable.

Fortuna SA, Wen J, Chun IS, Li X.

Nano Lett. 2008 Dec;8(12):4421-7. doi: 10.1021/nl802331m.

PMID:
19367971
4.

Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core-shell nanowires on Si(111) substrate.

Tomioka K, Kobayashi Y, Motohisa J, Hara S, Fukui T.

Nanotechnology. 2009 Apr 8;20(14):145302. doi: 10.1088/0957-4484/20/14/145302. Epub 2009 Mar 17.

PMID:
19420521
5.

Strengthening brittle semiconductor nanowires through stacking faults: insights from in situ mechanical testing.

Chen B, Wang J, Gao Q, Chen Y, Liao X, Lu C, Tan HH, Mai YW, Zou J, Ringer SP, Gao H, Jagadish C.

Nano Lett. 2013 Sep 11;13(9):4369-73. doi: 10.1021/nl402180k. Epub 2013 Sep 3.

PMID:
23984872
6.

Novel growth and properties of GaAs nanowires on Si substrates.

Kang JH, Gao Q, Joyce HJ, Tan HH, Jagadish C, Kim Y, Choi DY, Guo Y, Xu H, Zou J, Fickenscher MA, Smith LM, Jackson HE, Yarrison-Rice JM.

Nanotechnology. 2010 Jan 22;21(3):035604. doi: 10.1088/0957-4484/21/3/035604.

PMID:
19966397
7.

In situ electron backscattered diffraction of individual GaAs nanowires.

Prikhodko SV, Sitzman S, Gambin V, Kodambaka S.

Ultramicroscopy. 2008 Dec;109(1):133-8. doi: 10.1016/j.ultramic.2008.09.006. Epub 2008 Oct 7.

PMID:
18996646
8.

Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy.

Tchernycheva M, Harmand JC, Patriarche G, Travers L, Cirlin GE.

Nanotechnology. 2006 Aug 28;17(16):4025-30. doi: 10.1088/0957-4484/17/16/005. Epub 2006 Jul 14.

PMID:
21727532
9.

High quality GaAs nanowires grown on glass substrates.

Dhaka V, Haggren T, Jussila H, Jiang H, Kauppinen E, Huhtio T, Sopanen M, Lipsanen H.

Nano Lett. 2012 Apr 11;12(4):1912-8. doi: 10.1021/nl204314z. Epub 2012 Mar 27.

PMID:
22432446
10.

In Situ Heat-Induced Replacement of GaAs Nanowires by Au.

Fauske VT, Huh J, Divitini G, Dheeraj DL, Munshi AM, Ducati C, Weman H, Fimland BO, van Helvoort AT.

Nano Lett. 2016 May 11;16(5):3051-7. doi: 10.1021/acs.nanolett.6b00109. Epub 2016 Apr 28.

PMID:
27104293
11.

Solid-phase diffusion mechanism for GaAs nanowire growth.

Persson AI, Larsson MW, Stenström S, Ohlsson BJ, Samuelson L, Wallenberg LR.

Nat Mater. 2004 Oct;3(10):677-81. Epub 2004 Sep 19.

PMID:
15378051
12.

Vertically standing Ge nanowires on GaAs(110) substrates.

Song MS, Jung JH, Kim Y, Wang Y, Zou J, Joyce HJ, Gao Q, Tan HH, Jagadish C.

Nanotechnology. 2008 Mar 26;19(12):125602. doi: 10.1088/0957-4484/19/12/125602. Epub 2008 Feb 21.

PMID:
21817734
13.

Electron mobilities approaching bulk limits in "surface-free" GaAs nanowires.

Joyce HJ, Parkinson P, Jiang N, Docherty CJ, Gao Q, Tan HH, Jagadish C, Herz LM, Johnston MB.

Nano Lett. 2014 Oct 8;14(10):5989-94. doi: 10.1021/nl503043p. Epub 2014 Sep 26.

14.

Twinning superlattice formation in GaAs nanowires.

Burgess T, Breuer S, Caroff P, Wong-Leung J, Gao Q, Hoe Tan H, Jagadish C.

ACS Nano. 2013 Sep 24;7(9):8105-14. doi: 10.1021/nn403390t. Epub 2013 Sep 5.

PMID:
23987994
15.

Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires.

Haas F, Sladek K, Winden A, von der Ahe M, Weirich TE, Rieger T, Lüth H, Grützmacher D, Schäpers T, Hardtdegen H.

Nanotechnology. 2013 Mar 1;24(8):085603. doi: 10.1088/0957-4484/24/8/085603. Epub 2013 Feb 5.

PMID:
23385879
16.

Correlation between anisotropy and lattice distortions in single crystal calcite nanowires grown in confinement.

Verch A, Côté AS, Darkins R, Kim YY, van de Locht R, Meldrum FC, Duffy DM, Kröger R.

Small. 2014 Jul 9;10(13):2697-702. doi: 10.1002/smll.201303839. Epub 2014 Mar 18.

PMID:
24644031
17.

Vertically aligned single crystal TiO2 nanowire arrays grown directly on transparent conducting oxide coated glass: synthesis details and applications.

Feng X, Shankar K, Varghese OK, Paulose M, Latempa TJ, Grimes CA.

Nano Lett. 2008 Nov;8(11):3781-6. doi: 10.1021/nl802096a. Epub 2008 Oct 28.

PMID:
18954124
18.

Evidence for structural phase transitions induced by the triple phase line shift in self-catalyzed GaAs nanowires.

Yu X, Wang H, Lu J, Zhao J, Misuraca J, Xiong P, von Molnár S.

Nano Lett. 2012 Oct 10;12(10):5436-42. doi: 10.1021/nl303323t. Epub 2012 Sep 18.

PMID:
22984828
19.

Growth characteristics of GaAs nanowires obtained by selective area metal-organic vapour-phase epitaxy.

Ikejiri K, Sato T, Yoshida H, Hiruma K, Motohisa J, Hara S, Fukui T.

Nanotechnology. 2008 Jul 2;19(26):265604. doi: 10.1088/0957-4484/19/26/265604. Epub 2008 May 20.

PMID:
21828685
20.

Crystal Phases in Hybrid Metal-Semiconductor Nanowire Devices.

David J, Rossella F, Rocci M, Ercolani D, Sorba L, Beltram F, Gemmi M, Roddaro S.

Nano Lett. 2017 Apr 12;17(4):2336-2341. doi: 10.1021/acs.nanolett.6b05223. Epub 2017 Feb 28.

PMID:
28231001

Supplemental Content

Support Center