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Items: 1 to 20 of 84

1.

Dynamic random access memory devices based on bismuth sulfide nanoplates prepared from a single source precursor.

Liu GY, Xu LY, Zhou F, Zhang Y, Li H, Xu QF, Lu JM.

Phys Chem Chem Phys. 2013 Jul 21;15(27):11554-8. doi: 10.1039/c3cp50700a.

PMID:
23752653
2.

A novel microchip based on indium tin oxide coated glass for contactless conductivity detection.

Zhao J, Chen Z, Li X, Pan J.

Talanta. 2011 Oct 15;85(5):2614-9. doi: 10.1016/j.talanta.2011.08.029.

PMID:
21962691
3.

Role of Nanoelectromechanical Switching in the Operation of Nanostructured Bi2Se3 Interlayers between Conductive Electrodes.

Kosmaca J, Andzane J, Baitimirova M, Lombardi F, Erts D.

ACS Appl Mater Interfaces. 2016 May 18;8(19):12257-62. doi: 10.1021/acsami.6b00406.

PMID:
27111150
4.

Adjustment of ON-state retention ability based on new donor-acceptor imides through structural tailoring for volatile device applications.

Zhuang H, Zhou Q, Li Y, Zhang Q, Li H, Xu Q, Li N, Lu J, Wang L.

ACS Appl Mater Interfaces. 2014 Jan 8;6(1):94-100. doi: 10.1021/am405000c.

PMID:
24328279
5.
6.

Resistive switching behavior and multiple transmittance states in solution-processed tungsten oxide.

Wu WT, Wu JJ, Chen JS.

ACS Appl Mater Interfaces. 2011 Jul;3(7):2616-21. doi: 10.1021/am200430y.

PMID:
21702504
7.

Layered semiconductor molybdenum disulfide nanomembrane based Schottky-barrier solar cells.

Shanmugam M, Durcan CA, Yu B.

Nanoscale. 2012 Dec 7;4(23):7399-405. doi: 10.1039/c2nr32394j.

PMID:
23085834
8.

Donor-acceptor oligoimides for application in high-performance electrical memory devices.

Lai YC, Kurosawa T, Higashihara T, Ueda M, Chen WC.

Chem Asian J. 2013 Jul;8(7):1514-22. doi: 10.1002/asia.201300335.

PMID:
23712951
9.

Effect of a blocking layer on the decrease in the leakage current in organic bistable devices.

Yoo CH, Ko SH, Kim TW.

J Nanosci Nanotechnol. 2013 Sep;13(9):6463-6.

PMID:
24205684
10.

Programmable digital memory devices based on nanoscale thin films of a thermally dimensionally stable polyimide.

Lee TJ, Chang CW, Hahm SG, Kim K, Park S, Kim DM, Kim J, Kwon WS, Liou GS, Ree M.

Nanotechnology. 2009 Apr 1;20(13):135204. doi: 10.1088/0957-4484/20/13/135204.

PMID:
19420490
11.

Color purity in polymer electrochromic window devices on indium-tin oxide and single-walled carbon nanotube electrodes.

Vasilyeva SV, Unur E, Walczak RM, Donoghue EP, Rinzler AG, Reynolds JR.

ACS Appl Mater Interfaces. 2009 Oct;1(10):2288-97. doi: 10.1021/am900435j.

PMID:
20355864
12.

Indium tin oxide nanopillar electrodes in polymer/fullerene solar cells.

Rider DA, Tucker RT, Worfolk BJ, Krause KM, Lalany A, Brett MJ, Buriak JM, Harris KD.

Nanotechnology. 2011 Feb 25;22(8):085706. doi: 10.1088/0957-4484/22/8/085706.

PMID:
21242635
13.

Flexible CuS nanotubes-ITO film Schottky junction solar cells with enhanced light harvesting by using an Ag mirror.

Wu C, Zhang Z, Wu Y, Lv P, Nie B, Luo L, Wang L, Hu J, Jie J.

Nanotechnology. 2013 Feb 1;24(4):045402. doi: 10.1088/0957-4484/24/4/045402.

PMID:
23299200
14.

High-performance bilayer flexible resistive random access memory based on low-temperature thermal atomic layer deposition.

Fang RC, Sun QQ, Zhou P, Yang W, Wang PF, Zhang DW.

Nanoscale Res Lett. 2013 Feb 19;8(1):92. doi: 10.1186/1556-276X-8-92.

15.

Operating mechanisms of organic bistable devices containing ZnO nanoparticles embedded in a poly-4-vinyl-phenol layer.

Park KH, Li F, Jung JH, Son DI, Cho SW, Kim TW.

J Nanosci Nanotechnol. 2010 Jul;10(7):4801-4.

PMID:
21128503
16.

n-Type nanostructured thermoelectric materials prepared from chemically synthesized ultrathin Bi2Te3 nanoplates.

Son JS, Choi MK, Han MK, Park K, Kim JY, Lim SJ, Oh M, Kuk Y, Park C, Kim SJ, Hyeon T.

Nano Lett. 2012 Feb 8;12(2):640-7. doi: 10.1021/nl203389x.

PMID:
22268842
17.

Memory devices based on lanthanide (Sm3+, Eu3+, Gd3+) complexes.

Fang J, You H, Chen J, Lin J, Ma D.

Inorg Chem. 2006 May 1;45(9):3701-4.

PMID:
16634604
18.

Flexible organic bistable devices based on graphene embedded in an insulating poly(methyl methacrylate) polymer layer.

Son DI, Kim TW, Shim JH, Jung JH, Lee DU, Lee JM, Park WI, Choi WK.

Nano Lett. 2010 Jul 14;10(7):2441-7. doi: 10.1021/nl1006036.

PMID:
20504010
20.

Improving Memory Performances by Adjusting the Symmetry and Polarity of O-Fluoroazobenzene-Based Molecules.

Liu Q, Dong H, Li Y, Li H, Chen D, Wang L, Xu Q, Lu J.

Chem Asian J. 2016 Feb 18;11(4):512-9. doi: 10.1002/asia.201501030.

PMID:
26530289
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