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Items: 1 to 20 of 87

1.

Exploring the limits of N-type ultra-shallow junction formation.

Polley CM, Clarke WR, Miwa JA, Scappucci G, Wells JW, Jaeger DL, Bischof MR, Reidy RF, Gorman BP, Simmons M.

ACS Nano. 2013 Jun 25;7(6):5499-505. doi: 10.1021/nn4016407. Epub 2013 May 30.

PMID:
23721101
2.

The Impact of Dopant Segregation on the Maximum Carrier Density in Si:P Multilayers.

Keizer JG, McKibbin SR, Simmons MY.

ACS Nano. 2015 Jul 28;9(7):7080-4. doi: 10.1021/acsnano.5b01638. Epub 2015 Jun 24.

PMID:
26083628
3.

Suppressing Segregation in Highly Phosphorus Doped Silicon Monolayers.

Keizer JG, Koelling S, Koenraad PM, Simmons MY.

ACS Nano. 2015 Dec 22;9(12):12537-41. doi: 10.1021/acsnano.5b06299. Epub 2015 Nov 20.

PMID:
26568129
4.

Realization of radial p-n junction silicon nanowire solar cell based on low-temperature and shallow phosphorus doping.

Dong G, Liu F, Liu J, Zhang H, Zhu M.

Nanoscale Res Lett. 2013 Dec 27;8(1):544. doi: 10.1186/1556-276X-8-544.

5.

Use of phosphine as an n-type dopant source for vapor-liquid-solid growth of silicon nanowires.

Wang Y, Lew KK, Ho TT, Pan L, Novak SW, Dickey EC, Redwing JM, Mayer TS.

Nano Lett. 2005 Nov;5(11):2139-43.

PMID:
16277441
6.

Epitaxial top-gated atomic-scale silicon wire in a three-dimensional architecture.

McKibbin SR, Scappucci G, Pok W, Simmons MY.

Nanotechnology. 2013 Feb 1;24(4):045303. doi: 10.1088/0957-4484/24/4/045303. Epub 2013 Jan 4.

PMID:
23291418
7.

Visualization and manipulation of individual dopant states in single conjugated oligomers.

Wang S, Wang W, Lin N.

ACS Nano. 2012 Apr 24;6(4):3404-10. doi: 10.1021/nn300428k. Epub 2012 Mar 13.

PMID:
22397455
8.

Atomic-scale, all epitaxial in-plane gated donor quantum dot in silicon.

Fuhrer A, Füchsle M, Reusch TC, Weber B, Simmons MY.

Nano Lett. 2009 Feb;9(2):707-10. doi: 10.1021/nl803196f.

PMID:
19119868
9.

Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts.

Habicht S, Zhao QT, Feste SF, Knoll L, Trellenkamp S, Ghyselen B, Mantl S.

Nanotechnology. 2010 Mar 12;21(10):105701. doi: 10.1088/0957-4484/21/10/105701. Epub 2010 Feb 15.

PMID:
20154367
10.

An efficient room-temperature silicon-based light-emitting diode.

Ng WL, Lourenço MA, Gwilliam RM, Ledain S, Shao G, Homewood KP.

Nature. 2001 Mar 8;410(6825):192-4.

PMID:
11242075
11.

High-resolution scanning near-field EBIC microscopy: application to the characterisation of a shallow ion implanted p+-n silicon junction.

Smaali K, Fauré J, El Hdiy A, Troyon M.

Ultramicroscopy. 2008 May;108(6):605-12. Epub 2007 Oct 25.

PMID:
18053650
12.

Improvement of heavy dopant doped Ni-silicide using ytterbium interlayer for nano-scale MOSFETS with an ultra shallow junction.

Shin HS, Oh SK, Kang MH, Li SG, Lee GW, Lee HD.

J Nanosci Nanotechnol. 2011 Jul;11(7):5628-32.

PMID:
22121582
13.

Depth-dependent imaging of individual dopant atoms in silicon.

Voyles PM, Muller DA, Kirkland EJ.

Microsc Microanal. 2004 Apr;10(2):291-300.

PMID:
15306055
14.

Large-scale parallel arrays of silicon nanowires via block copolymer directed self-assembly.

Farrell RA, Kinahan NT, Hansel S, Stuen KO, Petkov N, Shaw MT, West LE, Djara V, Dunne RJ, Varona OG, Gleeson PG, Jung SJ, Kim HY, Koleśnik MM, Lutz T, Murray CP, Holmes JD, Nealey PF, Duesberg GS, Krstić V, Morris MA.

Nanoscale. 2012 May 21;4(10):3228-36. doi: 10.1039/c2nr00018k. Epub 2012 Apr 5.

PMID:
22481430
15.

Contact doping of silicon wafers and nanostructures with phosphine oxide monolayers.

Hazut O, Agarwala A, Amit I, Subramani T, Zaidiner S, Rosenwaks Y, Yerushalmi R.

ACS Nano. 2012 Nov 27;6(11):10311-8. doi: 10.1021/nn304199w. Epub 2012 Oct 29.

PMID:
23083376
16.
17.

Controlled nanoscale doping of semiconductors via molecular monolayers.

Ho JC, Yerushalmi R, Jacobson ZA, Fan Z, Alley RL, Javey A.

Nat Mater. 2008 Jan;7(1):62-7. Epub 2007 Nov 11.

PMID:
17994026
18.

Observation of diameter dependent carrier distribution in nanowire-based transistors.

Schulze A, Hantschel T, Eyben P, Verhulst AS, Rooyackers R, Vandooren A, Mody J, Nazir A, Leonelli D, Vandervorst W.

Nanotechnology. 2011 May 6;22(18):185701. doi: 10.1088/0957-4484/22/18/185701. Epub 2011 Mar 17.

PMID:
21415466
19.

Effect of HCl on the doping and shape control of silicon nanowires.

Gentile P, Solanki A, Pauc N, Oehler F, Salem B, Rosaz G, Baron T, Den Hertog M, Calvo V.

Nanotechnology. 2012 Jun 1;23(21):215702. doi: 10.1088/0957-4484/23/21/215702. Epub 2012 May 3.

PMID:
22551776
20.

Dopant profiling based on scanning electron and helium ion microscopy.

Chee AK, Boden SA.

Ultramicroscopy. 2016 Feb;161:51-8. doi: 10.1016/j.ultramic.2015.10.003. Epub 2015 Oct 19.

PMID:
26624515

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