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Items: 1 to 20 of 217

1.

Manipulated transformation of filamentary and homogeneous resistive switching on ZnO thin film memristor with controllable multistate.

Huang CH, Huang JS, Lai CC, Huang HW, Lin SJ, Chueh YL.

ACS Appl Mater Interfaces. 2013 Jul 10;5(13):6017-23. doi: 10.1021/am4007287. Epub 2013 Jun 26.

PMID:
23705848
2.

Compliance-Free ZrO2/ZrO2 - x /ZrO2 Resistive Memory with Controllable Interfacial Multistate Switching Behaviour.

Huang R, Yan X, Ye S, Kashtiban R, Beanland R, Morgan KA, Charlton MDB, de Groot CHK.

Nanoscale Res Lett. 2017 Dec;12(1):384. doi: 10.1186/s11671-017-2155-0. Epub 2017 Jun 2.

3.

Improved performance of ZnO-based resistive memory by internal diffusion of Ag atoms.

Peng CN, Wang CW, Huang JS, Chang WY, Wu WW, Chueh YL.

J Nanosci Nanotechnol. 2012 Aug;12(8):6271-5.

PMID:
22962735
4.

Tunable multilevel storage of complementary resistive switching on single-step formation of ZnO/ZnWO(x) bilayer structure via interfacial engineering.

Lin SM, Tseng JY, Su TY, Shih YC, Huang JS, Huang CH, Lin SJ, Chueh YL.

ACS Appl Mater Interfaces. 2014 Oct 22;6(20):17686-93. doi: 10.1021/am504004v. Epub 2014 Oct 6.

PMID:
25208587
5.

Influence of Incorporated Pt-Fe2O3 Core-Shell Nanoparticles on the Resistive Switching Characteristics of ZnO Thin Film.

Yoo EJ, Kang SY, Shim EL, Yoon TS, Kang CJ, Choi YJ.

J Nanosci Nanotechnol. 2015 Nov;15(11):8622-6.

PMID:
26726563
6.

Rectifying switching characteristics of Pt/ZnO/Pt structure based resistive memory.

Wang J, Song Z, Xu K, Liu M.

J Nanosci Nanotechnol. 2010 Nov;10(11):7088-91.

PMID:
21137871
7.

Voltage-polarity dependent multi-mode resistive switching on sputtered MgO nanostructures.

Dias C, Guerra LM, Bordalo BD, Lv H, Ferraria AM, Botelho do Rego AM, Cardoso S, Freitas PP, Ventura J.

Phys Chem Chem Phys. 2017 May 3;19(17):10898-10904. doi: 10.1039/c7cp00062f.

PMID:
28401238
8.

Status and Prospects of ZnO-Based Resistive Switching Memory Devices.

Simanjuntak FM, Panda D, Wei KH, Tseng TY.

Nanoscale Res Lett. 2016 Dec;11(1):368. doi: 10.1186/s11671-016-1570-y. Epub 2016 Aug 19. Review.

9.

ZnO1-x nanorod arrays/ZnO thin film bilayer structure: from homojunction diode and high-performance memristor to complementary 1D1R application.

Huang CH, Huang JS, Lin SM, Chang WY, He JH, Chueh YL.

ACS Nano. 2012 Sep 25;6(9):8407-14. Epub 2012 Sep 6.

PMID:
22900519
10.

Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications.

Wang Y, Liu Q, Long S, Wang W, Wang Q, Zhang M, Zhang S, Li Y, Zuo Q, Yang J, Liu M.

Nanotechnology. 2010 Jan 29;21(4):045202. doi: 10.1088/0957-4484/21/4/045202. Epub 2009 Dec 10.

PMID:
20009169
11.

Resistive switching characteristics of the Cr/ZnO/Cr structure.

Yoo EJ, Kim JH, Song JH, Yoon TS, Choi YJ, Kang CJ.

J Nanosci Nanotechnol. 2013 Sep;13(9):6395-9.

PMID:
24205668
12.

Permanent Data Storage in ZnO Thin Films by Filamentary Resistive Switching.

Melo AH, Macêdo MA.

PLoS One. 2016 Dec 19;11(12):e0168515. doi: 10.1371/journal.pone.0168515. eCollection 2016.

13.

Fabrication and resistive switching characteristics of high compact Ga-doped ZnO nanorod thin film devices.

Yao IC, Lee DY, Tseng TY, Lin P.

Nanotechnology. 2012 Apr 13;23(14):145201. doi: 10.1088/0957-4484/23/14/145201. Epub 2012 Mar 21.

PMID:
22433578
14.

Stability scheme of ZnO-thin film resistive switching memory: influence of defects by controllable oxygen pressure ratio.

Huang HW, Kang CF, Lai FI, He JH, Lin SJ, Chueh YL.

Nanoscale Res Lett. 2013 Nov 16;8(1):483. doi: 10.1186/1556-276X-8-483.

15.

Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer.

Li Y, Long S, Lv H, Liu Q, Wang Y, Zhang S, Lian W, Wang M, Zhang K, Xie H, Liu S, Liu M.

Nanotechnology. 2011 Jun 24;22(25):254028. doi: 10.1088/0957-4484/22/25/254028. Epub 2011 May 16.

PMID:
21572216
16.

Resistive switching in copper oxide nanorods: a bottom up approach applicable for enhanced scalability.

Kumar R, Mehta BR, Varandani D, Singh VN.

J Nanosci Nanotechnol. 2011 Oct;11(10):8538-42.

PMID:
22400221
17.

Opportunity of spinel ferrite materials in nonvolatile memory device applications based on their resistive switching performances.

Hu W, Qin N, Wu G, Lin Y, Li S, Bao D.

J Am Chem Soc. 2012 Sep 12;134(36):14658-61. doi: 10.1021/ja305681n. Epub 2012 Aug 29.

PMID:
22931305
18.

Intrinsic and interfacial effect of electrode metals on the resistive switching behaviors of zinc oxide films.

Xue WH, Xiao W, Shang J, Chen XX, Zhu XJ, Pan L, Tan HW, Zhang WB, Ji ZH, Liu G, Xu XH, Ding J, Li RW.

Nanotechnology. 2014 Oct 24;25(42):425204. doi: 10.1088/0957-4484/25/42/425204. Epub 2014 Oct 2.

PMID:
25274278
19.
20.

Photo-stimulated resistive switching of ZnO nanorods.

Park J, Lee S, Yong K.

Nanotechnology. 2012 Sep 28;23(38):385707. doi: 10.1088/0957-4484/23/38/385707. Epub 2012 Sep 5.

PMID:
22948083

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