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Items: 1 to 20 of 102

1.

Anisotropic two-dimensional electron gas at the LaAlO₃/SrTiO₃ (110) interface.

Annadi A, Zhang Q, Renshaw Wang X, Tuzla N, Gopinadhan K, Lü WM, Roy Barman A, Liu ZQ, Srivastava A, Saha S, Zhao YL, Zeng SW, Dhar S, Olsson E, Gu B, Yunoki S, Maekawa S, Hilgenkamp H, Venkatesan T, Ariando.

Nat Commun. 2013;4:1838. doi: 10.1038/ncomms2804.

2.

Electronic phase separation at the LaAlO₃/SrTiO₃ interface.

Ariando, Wang X, Baskaran G, Liu ZQ, Huijben J, Yi JB, Annadi A, Barman AR, Rusydi A, Dhar S, Feng YP, Ding J, Hilgenkamp H, Venkatesan T.

Nat Commun. 2011 Feb 8;2:188. doi: 10.1038/ncomms1192.

PMID:
21304517
3.

Electronic phenomena at complex oxide interfaces: insights from first principles.

Pentcheva R, Pickett WE.

J Phys Condens Matter. 2010 Feb 3;22(4):043001. doi: 10.1088/0953-8984/22/4/043001. Epub 2010 Jan 12.

PMID:
21386302
4.

Switchable induced polarization in LaAlO3/SrTiO3 heterostructures.

Bark CW, Sharma P, Wang Y, Baek SH, Lee S, Ryu S, Folkman CM, Paudel TR, Kumar A, Kalinin SV, Sokolov A, Tsymbal EY, Rzchowski MS, Gruverman A, Eom CB.

Nano Lett. 2012 Apr 11;12(4):1765-71. doi: 10.1021/nl3001088. Epub 2012 Mar 13.

PMID:
22400486
5.

Electronic and magnetic properties of SrTiO(3)/LaAlO(3) interfaces from first principles.

Chen H, Kolpak AM, Ismail-Beigi S.

Adv Mater. 2010 Jul 20;22(26-27):2881-99. doi: 10.1002/adma.200903800. Review.

PMID:
20408133
6.

Tunable conductivity threshold at polar oxide interfaces.

Reinle-Schmitt ML, Cancellieri C, Li D, Fontaine D, Medarde M, Pomjakushina E, Schneider CW, Gariglio S, Ghosez P, Triscone JM, Willmott PR.

Nat Commun. 2012 Jul 3;3:932. doi: 10.1038/ncomms1936.

PMID:
22760631
7.

Critical thickness for ferromagnetism in LaAlO₃/SrTiO₃ heterostructures.

Kalisky B, Bert JA, Klopfer BB, Bell C, Sato HK, Hosoda M, Hikita Y, Hwang HY, Moler KA.

Nat Commun. 2012 Jun 26;3:922. doi: 10.1038/ncomms1931. Erratum in: Nat Commun. 2012;3:1183.

PMID:
22735450
8.

A universal critical density underlying the physics of electrons at the LaAlO₃/SrTiO₃ interface.

Joshua A, Pecker S, Ruhman J, Altman E, Ilani S.

Nat Commun. 2012;3:1129. doi: 10.1038/ncomms2116.

PMID:
23072799
9.

Creation of a two-dimensional electron gas at an oxide interface on silicon.

Park JW, Bogorin DF, Cen C, Felker DA, Zhang Y, Nelson CT, Bark CW, Folkman CM, Pan XQ, Rzchowski MS, Levy J, Eom CB.

Nat Commun. 2010 Oct 19;1:94. doi: 10.1038/ncomms1096. Erratum in: Nat Commun. 2013;4:1457.

PMID:
20981022
10.

Reversible insulator-metal transition of LaAlO₃/SrTiO₃ interface for nonvolatile memory.

Lu HL, Liao ZM, Zhang L, Yuan WT, Wang Y, Ma XM, Yu DP.

Sci Rep. 2013 Oct 8;3:2870. doi: 10.1038/srep02870.

11.

Two-dimensional superconductivity at a Mott insulator/band insulator interface LaTiO3/SrTiO3.

Biscaras J, Bergeal N, Kushwaha A, Wolf T, Rastogi A, Budhani RC, Lesueur J.

Nat Commun. 2010 Oct 5;1:89. doi: 10.1038/ncomms1084.

PMID:
20981013
12.

Polar discontinuity doping of the LaVO_{3}/SrTiO_{3} interface.

Hotta Y, Susaki T, Hwang HY.

Phys Rev Lett. 2007 Dec 7;99(23):236805. Epub 2007 Dec 6.

PMID:
18233395
13.

High-T(c) Superconductivity at the Interface between the CaCuO2 and SrTiO3 Insulating Oxides.

Di Castro D, Cantoni C, Ridolfi F, Aruta C, Tebano A, Yang N, Balestrino G.

Phys Rev Lett. 2015 Oct 2;115(14):147001. doi: 10.1103/PhysRevLett.115.147001. Epub 2015 Sep 28.

PMID:
26551817
14.

Control of electronic conduction at an oxide heterointerface using surface polar adsorbates.

Xie Y, Hikita Y, Bell C, Hwang HY.

Nat Commun. 2011 Oct 11;2:494. doi: 10.1038/ncomms1501.

PMID:
21988910
15.

Quantization of Hall Resistance at the Metallic Interface between an Oxide Insulator and SrTiO_{3}.

Trier F, Prawiroatmodjo GE, Zhong Z, Christensen DV, von Soosten M, Bhowmik A, Lastra JM, Chen Y, Jespersen TS, Pryds N.

Phys Rev Lett. 2016 Aug 26;117(9):096804. doi: 10.1103/PhysRevLett.117.096804. Epub 2016 Aug 25.

PMID:
27610874
16.

Room-temperature electronically-controlled ferromagnetism at the LaAlO₃/SrTiO₃ interface.

Bi F, Huang M, Ryu S, Lee H, Bark CW, Eom CB, Irvin P, Levy J.

Nat Commun. 2014 Sep 25;5:5019. doi: 10.1038/ncomms6019.

PMID:
25254952
17.

Termination control of electronic phases in oxide thin films and interfaces: LaAlO3/SrTiO3(001).

Pentcheva R, Arras R, Otte K, Ruiz VG, Pickett WE.

Philos Trans A Math Phys Eng Sci. 2012 Oct 28;370(1977):4904-26. doi: 10.1098/rsta.2012.0202.

18.

Superconductivity at the LaAlO(3)/SrTiO(3) interface.

Gariglio S, Reyren N, Caviglia AD, Triscone JM.

J Phys Condens Matter. 2009 Apr 22;21(16):164213. doi: 10.1088/0953-8984/21/16/164213. Epub 2009 Mar 31.

PMID:
21825393
19.

A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al2O3/SrTiO3.

Chen YZ, Bovet N, Trier F, Christensen DV, Qu FM, Andersen NH, Kasama T, Zhang W, Giraud R, Dufouleur J, Jespersen TS, Sun JR, Smith A, Nygård J, Lu L, Büchner B, Shen BG, Linderoth S, Pryds N.

Nat Commun. 2013;4:1371. doi: 10.1038/ncomms2394.

PMID:
23340411
20.

First-principles characterization of the critical thickness for forming metallic states in strained LaAlO₃/SrTiO₃(001) heterostructure.

Nazir S, Yang K.

ACS Appl Mater Interfaces. 2014 Dec 24;6(24):22351-8. doi: 10.1021/am506336w. Epub 2014 Dec 8.

PMID:
25486683

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