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Items: 1 to 20 of 187

1.

Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs.

Jia C, Yu T, Lu H, Zhong C, Sun Y, Tong Y, Zhang G.

Opt Express. 2013 Apr 8;21(7):8444-9. doi: 10.1364/OE.21.008444.

PMID:
23571934
2.

Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer.

Jang LW, Ju JW, Jeon DW, Park JW, Polyakov AY, Lee SJ, Baek JH, Lee SM, Cho YH, Lee IH.

Opt Express. 2012 Mar 12;20(6):6036-41. doi: 10.1364/OE.20.006036.

PMID:
22418481
3.

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer.

Zhang ZH, Tan ST, Liu W, Ju Z, Zheng K, Kyaw Z, Ji Y, Hasanov N, Sun XW, Demir HV.

Opt Express. 2013 Feb 25;21(4):4958-69. doi: 10.1364/OE.21.004958. Erratum in: Opt Express. 2013 Jul 29;21(15):17670.

PMID:
23482028
4.

Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes.

Son JH, Lee JL.

Opt Express. 2010 Mar 15;18(6):5466-71. doi: 10.1364/OE.18.005466.

PMID:
20389563
5.

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.

Kyaw Z, Zhang ZH, Liu W, Tan ST, Ju ZG, Zhang XL, Ji Y, Hasanov N, Zhu B, Lu S, Zhang Y, Sun XW, Demir HV.

Opt Express. 2014 Jan 13;22(1):809-16. doi: 10.1364/OE.22.000809.

PMID:
24515040
6.

Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO(2).

Cho CY, Lee JB, Lee SJ, Han SH, Park TY, Kim JW, Kim YC, Park SJ.

Opt Express. 2010 Jan 18;18(2):1462-8. doi: 10.1364/OE.18.001462.

PMID:
20173974
7.

Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands.

Wei T, Kong Q, Wang J, Li J, Zeng Y, Wang G, Li J, Liao Y, Yi F.

Opt Express. 2011 Jan 17;19(2):1065-71. doi: 10.1364/OE.19.001065.

PMID:
21263645
8.

Vertical InGaN light-emitting diodes with a sapphire-face-up structure.

Yang YC, Sheu JK, Lee ML, Tu SJ, Huang FW, Lai WC, Hon S, Ko TK.

Opt Express. 2012 Jan 2;20(1):A119-24.

PMID:
22379672
9.

High performance of InGaN light-emitting diodes by air-gap/GaN distributed Bragg reflectors.

Ryu JH, Kim HY, Kim HK, Katharria YS, Han N, Kang JH, Park YJ, Han M, Ryu BD, Ko KB, Suh EK, Hong CH.

Opt Express. 2012 Apr 23;20(9):9999-10003. doi: 10.1364/OE.20.009999.

PMID:
22535092
10.

Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes.

Zhao Y, Yan Q, Feezell D, Fujito K, Van de Walle CG, Speck JS, DenBaars SP, Nakamura S.

Opt Express. 2013 Jan 14;21 Suppl 1:A53-9. doi: 10.1364/OE.21.000A53.

PMID:
23389275
11.

Structural and optical properties of disc-in-wire InGaN/GaN LEDs.

Yan L, Jahangir S, Wight SA, Nikoobakht B, Bhattacharya P, Millunchick JM.

Nano Lett. 2015 Mar 11;15(3):1535-9. doi: 10.1021/nl503826k. Epub 2015 Feb 11.

PMID:
25658444
12.

A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells.

Park H, Baik KH, Kim J, Ren F, Pearton SJ.

Opt Express. 2013 May 20;21(10):12908-13. doi: 10.1364/OE.21.012908.

PMID:
23736510
13.

Effect of Auger recombination and leakage on the droop in InGaN/GaN quantum well LEDs.

Römer F, Witzigmann B.

Opt Express. 2014 Oct 20;22 Suppl 6:A1440-52. doi: 10.1364/OE.22.0A1440.

PMID:
25607301
14.

Orange a-plane InGaN/GaN light-emitting diodes grown on r-plane sapphire substrates.

Seo YG, Baik KH, Song H, Son JS, Oh K, Hwang SM.

Opt Express. 2011 Jul 4;19(14):12919-24. doi: 10.1364/OE.19.012919.

PMID:
21747444
15.

Effect of embedded silica nanospheres on improving the performance of InGaN/GaN light-emitting diodes.

Park YJ, Kim HY, Ryu JH, Kim HK, Kang JH, Han N, Han M, Jeong H, Jeong MS, Hong CH.

Opt Express. 2011 Jan 31;19(3):2029-36. doi: 10.1364/OE.19.002029.

PMID:
21369019
16.

GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells.

Chang HM, Lai WC, Chen WS, Chang SJ.

Opt Express. 2015 Apr 6;23(7):A337-45. doi: 10.1364/OE.23.00A337.

PMID:
25968799
17.

Controlling electron overflow in phosphor-free InGaN/GaN nanowire white light-emitting diodes.

Nguyen HP, Cui K, Zhang S, Djavid M, Korinek A, Botton GA, Mi Z.

Nano Lett. 2012 Mar 14;12(3):1317-23. doi: 10.1021/nl203860b. Epub 2012 Feb 2.

PMID:
22283508
18.

Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays.

Li Q, Westlake KR, Crawford MH, Lee SR, Koleske DD, Figiel JJ, Cross KC, Fathololoumi S, Mi Z, Wang GT.

Opt Express. 2011 Dec 5;19(25):25528-34. doi: 10.1364/OE.19.025528.

PMID:
22273946
19.

High-speed GaN/GaInN nanowire array light-emitting diode on silicon(111).

Koester R, Sager D, Quitsch WA, Pfingsten O, Poloczek A, Blumenthal S, Keller G, Prost W, Bacher G, Tegude FJ.

Nano Lett. 2015 Apr 8;15(4):2318-23. doi: 10.1021/nl504447j. Epub 2015 Mar 20.

PMID:
25758029
20.

Localized surface plasmon-enhanced near-ultraviolet emission from InGaN/GaN light-emitting diodes using silver and platinum nanoparticles.

Hong SH, Cho CY, Lee SJ, Yim SY, Lim W, Kim ST, Park SJ.

Opt Express. 2013 Feb 11;21(3):3138-44. doi: 10.1364/OE.21.003138.

PMID:
23481772

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