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Items: 1 to 20 of 129

1.

Enhanced performance of InGaN/GaN based solar cells with an In(0.05)Ga(0.95)N ultra-thin inserting layer between GaN barrier and In(0.2)Ga(0.8)N well.

Ren Z, Chao L, Chen X, Zhao B, Wang X, Tong J, Zhang J, Zhuo X, Li D, Yi H, Li S.

Opt Express. 2013 Mar 25;21(6):7118-24. doi: 10.1364/OE.21.007118.

PMID:
23546093
2.

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.

Kyaw Z, Zhang ZH, Liu W, Tan ST, Ju ZG, Zhang XL, Ji Y, Hasanov N, Zhu B, Lu S, Zhang Y, Sun XW, Demir HV.

Opt Express. 2014 Jan 13;22(1):809-16. doi: 10.1364/OE.22.000809.

PMID:
24515040
3.

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer.

Zhang ZH, Tan ST, Liu W, Ju Z, Zheng K, Kyaw Z, Ji Y, Hasanov N, Sun XW, Demir HV.

Opt Express. 2013 Feb 25;21(4):4958-69. doi: 10.1364/OE.21.004958. Erratum in: Opt Express. 2013 Jul 29;21(15):17670.

PMID:
23482028
4.

ZnO/p-GaN heterostructure for solar cells and the effect of ZnGa2O4 interlayer on their performance.

Nam SY, Choi YS, Lee JH, Park SJ, Lee JY, Lee DS.

J Nanosci Nanotechnol. 2013 Jan;13(1):448-51.

PMID:
23646753
5.

Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs.

Jia C, Yu T, Lu H, Zhong C, Sun Y, Tong Y, Zhang G.

Opt Express. 2013 Apr 8;21(7):8444-9. doi: 10.1364/OE.21.008444.

PMID:
23571934
6.

Hierarchical structures consisting of SiO2 nanorods and p-GaN microdomes for efficiently harvesting solar energy for InGaN quantum well photovoltaic cells.

Ho CH, Lien DH, Chang HC, Lin CA, Kang CF, Hsing MK, Lai KY, He JH.

Nanoscale. 2012 Dec 7;4(23):7346-9. doi: 10.1039/c2nr32746e.

PMID:
23086234
7.

A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells.

Park H, Baik KH, Kim J, Ren F, Pearton SJ.

Opt Express. 2013 May 20;21(10):12908-13. doi: 10.1364/OE.21.012908.

PMID:
23736510
8.

Influence of composition on the performance of sintered Cu(In,Ga)Se2 nanocrystal thin-film photovoltaic devices.

Akhavan VA, Harvey TB, Stolle CJ, Ostrowski DP, Glaz MS, Goodfellow BW, Panthani MG, Reid DK, Vanden Bout DA, Korgel BA.

ChemSusChem. 2013 Mar;6(3):481-6. doi: 10.1002/cssc.201200677. Epub 2013 Feb 11.

PMID:
23401465
9.

Atomic layer deposited gallium oxide buffer layer enables 1.2 V open-circuit voltage in cuprous oxide solar cells.

Lee YS, Chua D, Brandt RE, Siah SC, Li JV, Mailoa JP, Lee SW, Gordon RG, Buonassisi T.

Adv Mater. 2014 Jul 16;26(27):4704-10. doi: 10.1002/adma.201401054. Epub 2014 May 23.

PMID:
24862543
10.

Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer.

Jang LW, Ju JW, Jeon DW, Park JW, Polyakov AY, Lee SJ, Baek JH, Lee SM, Cho YH, Lee IH.

Opt Express. 2012 Mar 12;20(6):6036-41. doi: 10.1364/OE.20.006036.

PMID:
22418481
11.

Strong enhancement of solar cell efficiency due to quantum dots with built-in charge.

Sablon KA, Little JW, Mitin V, Sergeev A, Vagidov N, Reinhardt K.

Nano Lett. 2011 Jun 8;11(6):2311-7. doi: 10.1021/nl200543v. Epub 2011 May 5.

PMID:
21545165
12.

M-plane core-shell InGaN/GaN multiple-quantum-wells on GaN wires for electroluminescent devices.

Koester R, Hwang JS, Salomon D, Chen X, Bougerol C, Barnes JP, Dang Dle S, Rigutti L, de Luna Bugallo A, Jacopin G, Tchernycheva M, Durand C, Eymery J.

Nano Lett. 2011 Nov 9;11(11):4839-45. doi: 10.1021/nl202686n. Epub 2011 Oct 11.

PMID:
21967509
13.

Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes.

Son JH, Lee JL.

Opt Express. 2010 Mar 15;18(6):5466-71. doi: 10.1364/OE.18.005466.

PMID:
20389563
14.

Multi-wavelength emitting InGan/GaN quantum well grown on V-shaped gan(1101) microfacet.

Kang ES, Ju JW, Kim JS, Ahn HK, Lee JK, Kim JH, Shin DC, Lee IH.

J Nanosci Nanotechnol. 2007 Nov;7(11):4053-6.

PMID:
18047117
15.

Effects of overgrown p-layer on the emission characteristics of the InGaN/GaN quantum wells in a high-indium light-emitting diode.

Chen CY, Hsieh C, Liao CH, Chung WL, Chen HT, Cao W, Chang WM, Chen HS, Yao YF, Ting SY, Kiang YW, Yang CC, Hu X.

Opt Express. 2012 May 7;20(10):11321-35. doi: 10.1364/OE.20.011321.

PMID:
22565753
16.

Enhanced power conversion efficiency in InGaN-based solar cells via graded composition multiple quantum wells.

Tsai YL, Wang SW, Huang JK, Hsu LH, Chiu CH, Lee PT, Yu P, Lin CC, Kuo HC.

Opt Express. 2015 Nov 30;23(24):A1434-41. doi: 10.1364/OE.23.0A1434.

PMID:
26698792
17.

Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO(2).

Cho CY, Lee JB, Lee SJ, Han SH, Park TY, Kim JW, Kim YC, Park SJ.

Opt Express. 2010 Jan 18;18(2):1462-8. doi: 10.1364/OE.18.001462.

PMID:
20173974
18.

Spontaneous emission in GaN/InGaN photonic crystal nanopillars.

David A, Benisty H, Weisbuch C.

Opt Express. 2007 Dec 24;15(26):17991-8004.

PMID:
19551097
19.

High performance of InGaN light-emitting diodes by air-gap/GaN distributed Bragg reflectors.

Ryu JH, Kim HY, Kim HK, Katharria YS, Han N, Kang JH, Park YJ, Han M, Ryu BD, Ko KB, Suh EK, Hong CH.

Opt Express. 2012 Apr 23;20(9):9999-10003. doi: 10.1364/OE.20.009999.

PMID:
22535092
20.

Photovoltaic nanocrystal scintillators hybridized on Si solar cells for enhanced conversion efficiency in UV.

Mutlugun E, Soganci IM, Demir HV.

Opt Express. 2008 Mar 17;16(6):3537-45.

PMID:
18542446

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