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Items: 1 to 20 of 442

1.

Delaminated graphene at silicon carbide facets: atomic scale imaging and spectroscopy.

Nicotra G, Ramasse QM, Deretzis I, La Magna A, Spinella C, Giannazzo F.

ACS Nano. 2013 Apr 23;7(4):3045-52. doi: 10.1021/nn305922u. Epub 2013 Apr 4.

PMID:
23530467
2.

Structure and magnetic properties of mono- and bi-layer graphene films on ultraprecision figured 4H-SiC(0001) surfaces.

Hattori AN, Okamoto T, Sadakuni S, Murata J, Oi H, Arima K, Sano Y, Hattori K, Daimon H, Endo K, Yamauchi K.

J Nanosci Nanotechnol. 2011 Apr;11(4):2897-902.

PMID:
21776650
3.

Graphene epitaxy by chemical vapor deposition on SiC.

Strupinski W, Grodecki K, Wysmolek A, Stepniewski R, Szkopek T, Gaskell PE, Grüneis A, Haberer D, Bozek R, Krupka J, Baranowski JM.

Nano Lett. 2011 Apr 13;11(4):1786-91. doi: 10.1021/nl200390e. Epub 2011 Mar 25.

PMID:
21438581
4.

Atomic-scale morphology and electronic structure of manganese atomic layers underneath epitaxial graphene on SiC(0001).

Gao T, Gao Y, Chang C, Chen Y, Liu M, Xie S, He K, Ma X, Zhang Y, Liu Z.

ACS Nano. 2012 Aug 28;6(8):6562-8. doi: 10.1021/nn302303n. Epub 2012 Aug 13.

PMID:
22861188
5.

Conductance anisotropy in epitaxial graphene sheets generated by substrate interactions.

Yakes MK, Gunlycke D, Tedesco JL, Campbell PM, Myers-Ward RL, Eddy CR Jr, Gaskill DK, Sheehan PE, Laracuente AR.

Nano Lett. 2010 May 12;10(5):1559-62. doi: 10.1021/nl9035302.

PMID:
20397734
6.

Long spin relaxation times in wafer scale epitaxial graphene on SiC(0001).

Maassen T, van den Berg JJ, Ijbema N, Fromm F, Seyller T, Yakimova R, van Wees BJ.

Nano Lett. 2012 Mar 14;12(3):1498-502. doi: 10.1021/nl2042497. Epub 2012 Feb 17.

PMID:
22324998
7.

Graphene synthesis on cubic SiC/Si wafers. perspectives for mass production of graphene-based electronic devices.

Aristov VY, Urbanik G, Kummer K, Vyalikh DV, Molodtsova OV, Preobrajenski AB, Zakharov AA, Hess C, Hänke T, Büchner B, Vobornik I, Fujii J, Panaccione G, Ossipyan YA, Knupfer M.

Nano Lett. 2010 Mar 10;10(3):992-5. doi: 10.1021/nl904115h.

PMID:
20141155
8.

Large-scale synthesis and characterization of hexagonal prism-shaped SiC nanowires.

Chen J, Yang G, Wu R, Pan Y, Lin J, Zhai R, Wu L.

J Nanosci Nanotechnol. 2008 Apr;8(4):2151-6.

PMID:
18572627
9.

Structural and electronic decoupling of C₆₀ from epitaxial graphene on SiC.

Cho J, Smerdon J, Gao L, Süzer O, Guest JR, Guisinger NP.

Nano Lett. 2012 Jun 13;12(6):3018-24. doi: 10.1021/nl3008049. Epub 2012 May 18.

PMID:
22577895
10.

Epitaxial graphene nanoribbon array fabrication using BCP-assisted nanolithography.

Liu G, Wu Y, Lin YM, Farmer DB, Ott JA, Bruley J, Grill A, Avouris P, Pfeiffer D, Balandin AA, Dimitrakopoulos C.

ACS Nano. 2012 Aug 28;6(8):6786-92. doi: 10.1021/nn301515a. Epub 2012 Jul 31.

PMID:
22780305
11.

Conductive atomic force microscope nanopatterning of epitaxial graphene on SiC(0001) in ambient conditions.

Alaboson JM, Wang QH, Kellar JA, Park J, Elam JW, Pellin MJ, Hersam MC.

Adv Mater. 2011 May 17;23(19):2181-4. doi: 10.1002/adma.201100367. Epub 2011 Mar 7. No abstract available.

PMID:
21381135
12.

Epitaxial graphene on SiC(0001): functional electrical microscopy studies and effect of atmosphere.

Kazakova O, Burnett TL, Patten J, Yang L, Yakimova R.

Nanotechnology. 2013 May 31;24(21):215702. doi: 10.1088/0957-4484/24/21/215702. Epub 2013 Apr 26.

PMID:
23618748
13.

Strong plasmon reflection at nanometer-size gaps in monolayer graphene on SiC.

Chen J, Nesterov ML, Nikitin AY, Thongrattanasiri S, Alonso-González P, Slipchenko TM, Speck F, Ostler M, Seyller T, Crassee I, Koppens FH, Martin-Moreno L, García de Abajo FJ, Kuzmenko AB, Hillenbrand R.

Nano Lett. 2013;13(12):6210-5. doi: 10.1021/nl403622t. Epub 2013 Nov 7.

PMID:
24188400
14.

Study on the growth of heteroepitaxial cubic silicon carbide layers in atmospheric-pressure H2-based plasma.

Kakiuchi H, Ohmi H, Yasutake K.

J Nanosci Nanotechnol. 2011 Apr;11(4):2903-9.

PMID:
21776651
15.

Mapping of local electrical properties in epitaxial graphene using electrostatic force microscopy.

Burnett T, Yakimova R, Kazakova O.

Nano Lett. 2011 Jun 8;11(6):2324-8. doi: 10.1021/nl200581g. Epub 2011 Apr 28.

PMID:
21526826
16.

Micro/nanoscale spatial resolution temperature probing for the interfacial thermal characterization of epitaxial graphene on 4H-SiC.

Yue Y, Zhang J, Wang X.

Small. 2011 Dec 2;7(23):3324-33. doi: 10.1002/smll.201101598. Epub 2011 Oct 13.

PMID:
21997970
17.

Atomic structure of graphene on SiO2.

Ishigami M, Chen JH, Cullen WG, Fuhrer MS, Williams ED.

Nano Lett. 2007 Jun;7(6):1643-8. Epub 2007 May 11.

PMID:
17497819
18.

Bottom-up growth of epitaxial graphene on 6H-SiC(0001).

Huang H, Chen W, Chen S, Wee AT.

ACS Nano. 2008 Dec 23;2(12):2513-8. doi: 10.1021/nn800711v.

PMID:
19206286
19.

Dependence of process characteristics on atomic-step density in catalyst-referred etching of 4H-SiC(0001) surface.

Okamoto T, Sano Y, Tachibana K, Arima K, Hattori AN, Yagi K, Murata J, Sadakuni S, Yamauchi K.

J Nanosci Nanotechnol. 2011 Apr;11(4):2928-30.

PMID:
21776655
20.

Free-standing epitaxial graphene.

Shivaraman S, Barton RA, Yu X, Alden J, Herman L, Chandrashekhar M, Park J, McEuen PL, Parpia JM, Craighead HG, Spencer MG.

Nano Lett. 2009 Sep;9(9):3100-5. doi: 10.1021/nl900479g.

PMID:
19663456

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