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Items: 1 to 20 of 98

1.

High-accuracy analysis of nanoscale semiconductor layers using beam-exit ar-ion polishing and scanning probe microscopy.

Robson AJ, Grishin I, Young RJ, Sanchez AM, Kolosov OV, Hayne M.

ACS Appl Mater Interfaces. 2013 Apr 24;5(8):3241-5. doi: 10.1021/am400270w.

PMID:
23528037
2.

Material sensitive scanning probe microscopy of subsurface semiconductor nanostructures via beam exit Ar ion polishing.

Kolosov OV, Grishin I, Jones R.

Nanotechnology. 2011 May 6;22(18):185702. doi: 10.1088/0957-4484/22/18/185702.

PMID:
21415470
3.
4.
5.

Selective etching of AlAs for preparation of III-V semiconductor thin foils.

Breen KR, Wilson RA, McClintock JA, Ahearn JS.

Microsc Res Tech. 1993 Jul 1;25(4):291-6.

PMID:
8358079
6.

Nanostructuring of ultra-thin HfO2 layers for high-k/III-V device application.

Benedicto M, Anguita J, Alvaro R, Galiana B, Molina-Aldereguia JM, Tejedor P.

J Nanosci Nanotechnol. 2011 Oct;11(10):8848-52.

PMID:
22400270
7.

Focused ion beam sectioning and lift-out method for copper and resist vias in organic low-k dielectrics.

Crawford EJ, Gignac L, Barth K, Petrus J, Levine E.

Microsc Microanal. 2002 Dec;8(6):502-8.

PMID:
12533211
9.

Direct observation of dopant distribution in GaAs compound semiconductors using phase-shifting electron holography and Lorentz microscopy.

Sasaki H, Otomo S, Minato R, Yamamoto K, Hirayama T.

Microscopy (Oxf). 2014 Jun;63(3):235-42. doi: 10.1093/jmicro/dfu008.

PMID:
24706942
10.

Toward site-specific dopant contrast in scanning electron microscopy.

Druckmüllerová Z, Kolíbal M, Vystavěl T, Sikola T.

Microsc Microanal. 2014 Aug;20(4):1312-7. doi: 10.1017/S1431927614000968.

PMID:
24844888
11.

Cross-sectional sample preparation by focused ion beam: a review of ion-sample interaction.

Ishitani T, Yaguchi T.

Microsc Res Tech. 1996 Nov 1;35(4):320-33. Review.

PMID:
8987026
12.

A study of the damage on FIB-prepared TEM samples of AlxGa1-xAs.

Yabuuchi Y, Tametou S, Okano T, Inazato S, Sadayama S, Yamamoto Y, Iwasaki K, Sugiyama Y.

J Electron Microsc (Tokyo). 2004;53(5):471-7.

PMID:
15582949
13.
14.

Optimization of the preparation of GaN-based specimens with low-energy ion milling for (S)TEM.

Mehrtens T, Bley S, Venkata Satyam P, Rosenauer A.

Micron. 2012 Aug;43(8):902-9. doi: 10.1016/j.micron.2012.03.008.

PMID:
22475986
15.

Strain measurement in semiconductor heterostructures by scanning transmission electron microscopy.

Müller K, Rosenauer A, Schowalter M, Zweck J, Fritz R, Volz K.

Microsc Microanal. 2012 Oct;18(5):995-1009. doi: 10.1017/S1431927612001274.

PMID:
23026441
16.

Comparison of TEM specimen preparation of perovskite thin films by tripod polishing and conventional ion milling.

Eberg E, Monsen AF, Tybell T, van Helvoort AT, Holmestad R.

J Electron Microsc (Tokyo). 2008 Dec;57(6):175-9. doi: 10.1093/jmicro/dfn018.

PMID:
18815212
17.

Improvements in performance of focused ion beam cross-sectioning: aspects of ion-sample interaction.

Ishitani T, Umemura K, Ohnishi T, Yaguchi T, Kamino T.

J Electron Microsc (Tokyo). 2004;53(5):443-9.

PMID:
15582945
18.

Large-area plan-view sample preparation for GaAs-based systems grown by molecular beam epitaxy.

Howard DJ, Paine DC, Sacks RN.

J Electron Microsc Tech. 1991 Jun;18(2):117-20.

PMID:
1885995
19.

Backscattered electron imaging for high resolution surface scanning electron microscopy with a new type YAG-detector.

Walther P, Autrata R, Chen Y, Pawley JB.

Scanning Microsc. 1991 Jun;5(2):301-9; discussion 310.

PMID:
1947922
20.

Thin dielectric film thickness determination by advanced transmission electron microscopy.

Diebold AC, Foran B, Kisielowski C, Muller DA, Pennycook SJ, Principe E, Stemmer S.

Microsc Microanal. 2003 Dec;9(6):493-508.

PMID:
14750984

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