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Items: 1 to 20 of 255

1.

Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors.

Liu W, Kang J, Sarkar D, Khatami Y, Jena D, Banerjee K.

Nano Lett. 2013 May 8;13(5):1983-90. doi: 10.1021/nl304777e. Epub 2013 Apr 4.

PMID:
23527483
2.

High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors.

Movva HC, Rai A, Kang S, Kim K, Fallahazad B, Taniguchi T, Watanabe K, Tutuc E, Banerjee SK.

ACS Nano. 2015 Oct 27;9(10):10402-10. doi: 10.1021/acsnano.5b04611. Epub 2015 Sep 14.

PMID:
26343531
3.

High-Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions.

Liu B, Ma Y, Zhang A, Chen L, Abbas AN, Liu Y, Shen C, Wan H, Zhou C.

ACS Nano. 2016 May 24;10(5):5153-60. doi: 10.1021/acsnano.6b00527. Epub 2016 May 9.

PMID:
27159780
4.

High-gain inverters based on WSe2 complementary field-effect transistors.

Tosun M, Chuang S, Fang H, Sachid AB, Hettick M, Lin Y, Zeng Y, Javey A.

ACS Nano. 2014 May 27;8(5):4948-53. doi: 10.1021/nn5009929. Epub 2014 Apr 3.

PMID:
24684575
5.

High performance top-gated multilayer WSe2 field effect transistors.

Pudasaini PR, Stanford MG, Oyedele A, Wong A, Hofmann A, Briggs D, Xiao K, Mandrus DG, Ward TZ, Rack PD.

Nanotechnology. 2017 Jul 18. doi: 10.1088/1361-6528/aa8081. [Epub ahead of print]

PMID:
28718775
6.

Reversible Semiconducting-to-Metallic Phase Transition in Chemical Vapor Deposition Grown Monolayer WSe2 and Applications for Devices.

Ma Y, Liu B, Zhang A, Chen L, Fathi M, Shen C, Abbas AN, Ge M, Mecklenburg M, Zhou C.

ACS Nano. 2015 Jul 28;9(7):7383-91. doi: 10.1021/acsnano.5b02399. Epub 2015 Jun 30.

PMID:
26125321
7.

Impact of Contact on the Operation and Performance of Back-Gated Monolayer MoS2 Field-Effect-Transistors.

Liu W, Sarkar D, Kang J, Cao W, Banerjee K.

ACS Nano. 2015 Aug 25;9(8):7904-12. doi: 10.1021/nn506512j. Epub 2015 Aug 3.

PMID:
26039221
8.

Degenerate n-doping of few-layer transition metal dichalcogenides by potassium.

Fang H, Tosun M, Seol G, Chang TC, Takei K, Guo J, Javey A.

Nano Lett. 2013 May 8;13(5):1991-5. doi: 10.1021/nl400044m. Epub 2013 Apr 11.

PMID:
23570647
9.

Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors.

Chuang HJ, Chamlagain B, Koehler M, Perera MM, Yan J, Mandrus D, Tománek D, Zhou Z.

Nano Lett. 2016 Mar 9;16(3):1896-902. doi: 10.1021/acs.nanolett.5b05066. Epub 2016 Feb 10.

PMID:
26844954
10.

Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts.

Yamamoto M, Nakaharai S, Ueno K, Tsukagoshi K.

Nano Lett. 2016 Apr 13;16(4):2720-7. doi: 10.1021/acs.nanolett.6b00390. Epub 2016 Mar 15.

PMID:
26963588
11.

High mobility WSe2 p- and n-type field-effect transistors contacted by highly doped graphene for low-resistance contacts.

Chuang HJ, Tan X, Ghimire NJ, Perera MM, Chamlagain B, Cheng MM, Yan J, Mandrus D, Tománek D, Zhou Z.

Nano Lett. 2014 Jun 11;14(6):3594-601. doi: 10.1021/nl501275p. Epub 2014 May 22.

PMID:
24844426
12.

High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits.

Song HS, Li SL, Gao L, Xu Y, Ueno K, Tang J, Cheng YB, Tsukagoshi K.

Nanoscale. 2013 Oct 21;5(20):9666-70. doi: 10.1039/c3nr01899g.

PMID:
23989804
13.

Stable electrical performance observed in large-scale monolayer WSe2(1-x)S2x with tunable band gap.

Huang J, Wang W, Fu Q, Yang L, Zhang K, Zhang J, Xiang B.

Nanotechnology. 2016 Apr 1;27(13):13LT01. doi: 10.1088/0957-4484/27/13/13LT01. Epub 2016 Feb 22.

PMID:
26901119
14.

Does p-type ohmic contact exist in WSe2-metal interfaces?

Wang Y, Yang RX, Quhe R, Zhong H, Cong L, Ye M, Ni Z, Song Z, Yang J, Shi J, Li J, Lu J.

Nanoscale. 2016 Jan 14;8(2):1179-91. doi: 10.1039/c5nr06204g.

PMID:
26666570
15.

Atomic Layer Deposition of Al2O3 on WSe2 Functionalized by Titanyl Phthalocyanine.

Park JH, Fathipour S, Kwak I, Sardashti K, Ahles CF, Wolf SF, Edmonds M, Vishwanath S, Xing HG, Fullerton-Shirey SK, Seabaugh A, Kummel AC.

ACS Nano. 2016 Jul 26;10(7):6888-96. doi: 10.1021/acsnano.6b02648. Epub 2016 Jun 29.

PMID:
27305595
16.

A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors.

Cho AJ, Park KC, Kwon JY.

Nanoscale Res Lett. 2015 Mar 10;10:115. doi: 10.1186/s11671-015-0827-1. eCollection 2015.

17.

High-performance single layered WSe₂ p-FETs with chemically doped contacts.

Fang H, Chuang S, Chang TC, Takei K, Takahashi T, Javey A.

Nano Lett. 2012 Jul 11;12(7):3788-92. doi: 10.1021/nl301702r. Epub 2012 Jun 19.

PMID:
22697053
18.

Controllable nondegenerate p-type doping of tungsten diselenide by octadecyltrichlorosilane.

Kang DH, Shim J, Jang SK, Jeon J, Jeon MH, Yeom GY, Jung WS, Jang YH, Lee S, Park JH.

ACS Nano. 2015 Feb 24;9(2):1099-107. doi: 10.1021/nn5074435. Epub 2015 Jan 28.

PMID:
25629805
19.

Role of metal contacts in high-performance phototransistors based on WSe2 monolayers.

Zhang W, Chiu MH, Chen CH, Chen W, Li LJ, Wee AT.

ACS Nano. 2014 Aug 26;8(8):8653-61.

PMID:
25106792
20.

Screw-dislocation-driven growth of two-dimensional few-layer and pyramid-like WSe₂ by sulfur-assisted chemical vapor deposition.

Chen L, Liu B, Abbas AN, Ma Y, Fang X, Liu Y, Zhou C.

ACS Nano. 2014 Nov 25;8(11):11543-51. doi: 10.1021/nn504775f. Epub 2014 Oct 28.

PMID:
25350314

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