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Items: 1 to 20 of 96

1.

Record maximum oscillation frequency in C-face epitaxial graphene transistors.

Guo Z, Dong R, Chakraborty PS, Lourenco N, Palmer J, Hu Y, Ruan M, Hankinson J, Kunc J, Cressler JD, Berger C, de Heer WA.

Nano Lett. 2013 Mar 13;13(3):942-7. doi: 10.1021/nl303587r.

PMID:
23418924
2.

200 GHz Maximum Oscillation Frequency in CVD Graphene Radio Frequency Transistors.

Wu Y, Zou X, Sun M, Cao Z, Wang X, Huo S, Zhou J, Yang Y, Yu X, Kong Y, Yu G, Liao L, Chen T.

ACS Appl Mater Interfaces. 2016 Oct 5;8(39):25645-25649.

PMID:
27640732
3.

Improvement of carrier mobility of top-gated SiC epitaxial graphene transistors using a PVA dielectric buffer layer.

Kim M, Hwang J, Lepak LA, Lee JW, Spencer MG, Tiwari S.

Nanotechnology. 2012 Aug 24;23(33):335202. doi: 10.1088/0957-4484/23/33/335202.

PMID:
22842470
4.

Self-aligned fabrication of graphene RF transistors with T-shaped gate.

Badmaev A, Che Y, Li Z, Wang C, Zhou C.

ACS Nano. 2012 Apr 24;6(4):3371-6. doi: 10.1021/nn300393c.

PMID:
22404336
5.

Radio Frequency Transistors Using Aligned Semiconducting Carbon Nanotubes with Current-Gain Cutoff Frequency and Maximum Oscillation Frequency Simultaneously Greater than 70 GHz.

Cao Y, Brady GJ, Gui H, Rutherglen C, Arnold MS, Zhou C.

ACS Nano. 2016 Jul 26;10(7):6782-90. doi: 10.1021/acsnano.6b02395.

PMID:
27327074
6.

100-GHz transistors from wafer-scale epitaxial graphene.

Lin YM, Dimitrakopoulos C, Jenkins KA, Farmer DB, Chiu HY, Grill A, Avouris P.

Science. 2010 Feb 5;327(5966):662. doi: 10.1126/science.1184289.

7.

SiC surface orientation and Si loss rate effects on epitaxial graphene.

Kim M, Hwang J, Shields VB, Tiwari S, Spencer MG, Lee JW.

Nanoscale Res Lett. 2012 Mar 12;7:186. doi: 10.1186/1556-276X-7-186.

8.

State-of-the-art graphene high-frequency electronics.

Wu Y, Jenkins KA, Valdes-Garcia A, Farmer DB, Zhu Y, Bol AA, Dimitrakopoulos C, Zhu W, Xia F, Avouris P, Lin YM.

Nano Lett. 2012 Jun 13;12(6):3062-7. doi: 10.1021/nl300904k.

PMID:
22563820
9.

Deep-submicron Graphene Field-Effect Transistors with State-of-Art fmax.

Lyu H, Lu Q, Liu J, Wu X, Zhang J, Li J, Niu J, Yu Z, Wu H, Qian H.

Sci Rep. 2016 Oct 24;6:35717. doi: 10.1038/srep35717.

10.

Black phosphorus radio-frequency transistors.

Wang H, Wang X, Xia F, Wang L, Jiang H, Xia Q, Chin ML, Dubey M, Han SJ.

Nano Lett. 2014 Nov 12;14(11):6424-9. doi: 10.1021/nl5029717.

PMID:
25347787
11.

Planar edge Schottky barrier-tunneling transistors using epitaxial graphene/SiC junctions.

Kunc J, Hu Y, Palmer J, Guo Z, Hankinson J, Gamal SH, Berger C, de Heer WA.

Nano Lett. 2014 Sep 10;14(9):5170-5. doi: 10.1021/nl502069d.

PMID:
25115623
12.

Epitaxial graphene transistors: enhancing performance via hydrogen intercalation.

Robinson JA, Hollander M, Labella M, Trumbull KA, Cavalero R, Snyder DW.

Nano Lett. 2011 Sep 14;11(9):3875-80. doi: 10.1021/nl2019855.

PMID:
21805993
13.

T-gate aligned nanotube radio frequency transistors and circuits with superior performance.

Che Y, Lin YC, Kim P, Zhou C.

ACS Nano. 2013 May 28;7(5):4343-50. doi: 10.1021/nn400847r.

PMID:
23590623
14.

Micro-Raman and micro-transmission imaging of epitaxial graphene grown on the Si and C faces of 6H-SiC.

Tiberj A, Camara N, Godignon P, Camassel J.

Nanoscale Res Lett. 2011 Jul 29;6:478. doi: 10.1186/1556-276X-6-478.

15.

Sub-10 nm gate length graphene transistors: operating at terahertz frequencies with current saturation.

Zheng J, Wang L, Quhe R, Liu Q, Li H, Yu D, Mei WN, Shi J, Gao Z, Lu J.

Sci Rep. 2013;3:1314. doi: 10.1038/srep01314.

16.

25 GHz embedded-gate graphene transistors with high-k dielectrics on extremely flexible plastic sheets.

Lee J, Ha TJ, Li H, Parrish KN, Holt M, Dodabalapur A, Ruoff RS, Akinwande D.

ACS Nano. 2013 Sep 24;7(9):7744-50. doi: 10.1021/nn403487y.

PMID:
23941439
17.

Enhanced transport and transistor performance with oxide seeded high-κ gate dielectrics on wafer-scale epitaxial graphene.

Hollander MJ, Labella M, Hughes ZR, Zhu M, Trumbull KA, Cavalero R, Snyder DW, Wang X, Hwang E, Datta S, Robinson JA.

Nano Lett. 2011 Sep 14;11(9):3601-7. doi: 10.1021/nl201358y.

PMID:
21805989
18.

Epitaxial graphene on SiC{0001}: advances and perspectives.

Norimatsu W, Kusunoki M.

Phys Chem Chem Phys. 2014 Feb 28;16(8):3501-11. doi: 10.1039/c3cp54523g.

PMID:
24434866
19.

The physics of epitaxial graphene on SiC(0001).

Kageshima H, Hibino H, Tanabe S.

J Phys Condens Matter. 2012 Aug 8;24(31):314215. doi: 10.1088/0953-8984/24/31/314215.

PMID:
22820985
20.

Investigation of structural and electronic properties of epitaxial graphene on 3C-SiC(100)/Si(100) substrates.

Gogneau N, Ben Gouider Trabelsi A, Silly MG, Ridene M, Portail M, Michon A, Oueslati M, Belkhou R, Sirotti F, Ouerghi A.

Nanotechnol Sci Appl. 2014 Sep 27;7:85-95. doi: 10.2147/NSA.S60324. Review.

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