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Items: 1 to 20 of 98

1.

A disorder induced field effect transistor in bilayer and trilayer graphene.

Xu D, Liu H, Sacksteder V 4th, Song J, Jiang H, Sun QF, Xie XC.

J Phys Condens Matter. 2013 Mar 13;25(10):105303. doi: 10.1088/0953-8984/25/10/105303.

PMID:
23406846
2.

Localized magnetic states in biased bilayer and trilayer graphene.

Ding KH, Zhu ZG, Berakdar J.

J Phys Condens Matter. 2009 May 6;21(18):182002. doi: 10.1088/0953-8984/21/18/182002.

PMID:
21825443
3.

Analytical modeling of trilayer graphene nanoribbon Schottky-barrier FET for high-speed switching applications.

Rahmani M, Ahmadi MT, Abadi HK, Saeidmanesh M, Akbari E, Ismail R.

Nanoscale Res Lett. 2013 Jan 30;8(1):55. doi: 10.1186/1556-276X-8-55.

4.

Transport studies of dual-gated ABC and ABA trilayer graphene: band gap opening and band structure tuning in very large perpendicular electric fields.

Zou K, Zhang F, Clapp C, MacDonald AH, Zhu J.

Nano Lett. 2013 Feb 13;13(2):369-73. doi: 10.1021/nl303375a.

PMID:
23336322
5.

Direct Observation of a Gate Tunable Band Gap in Electrical Transport in ABC-Trilayer Graphene.

Khodkov T, Khrapach I, Craciun MF, Russo S.

Nano Lett. 2015 Jul 8;15(7):4429-33. doi: 10.1021/acs.nanolett.5b00772.

PMID:
26079989
6.

Disorder effect on the integer quantum Hall effect in trilayer graphene.

Tian HY, Ma R, Chan KS, Wang J.

J Phys Condens Matter. 2013 Dec 11;25(49):495503. doi: 10.1088/0953-8984/25/49/495503.

PMID:
24184814
7.

Molecular adsorption induces the transformation of rhombohedral- to Bernal-stacking order in trilayer graphene.

Zhang W, Yan J, Chen CH, Lei L, Kuo JL, Shen Z, Li LJ.

Nat Commun. 2013;4:2074. doi: 10.1038/ncomms3074.

PMID:
23797687
8.

Atomic structure of ABC rhombohedral stacked trilayer graphene.

Warner JH, Mukai M, Kirkland AI.

ACS Nano. 2012 Jun 26;6(6):5680-6. doi: 10.1021/nn3017926.

PMID:
22663163
9.

Bi- and trilayer graphene solutions.

Shih CJ, Vijayaraghavan A, Krishnan R, Sharma R, Han JH, Ham MH, Jin Z, Lin S, Paulus GL, Reuel NF, Wang QH, Blankschtein D, Strano MS.

Nat Nanotechnol. 2011 Jun 26;6(7):439-45. doi: 10.1038/nnano.2011.94.

PMID:
21706026
10.

Trilayer graphene is a semimetal with a gate-tunable band overlap.

Craciun MF, Russo S, Yamamoto M, Oostinga JB, Morpurgo AF, Tarucha S.

Nat Nanotechnol. 2009 Jun;4(6):383-8. doi: 10.1038/nnano.2009.89.

PMID:
19498401
11.

Opening an electrical band gap of bilayer graphene with molecular doping.

Zhang W, Lin CT, Liu KK, Tite T, Su CY, Chang CH, Lee YH, Chu CW, Wei KH, Kuo JL, Li LJ.

ACS Nano. 2011 Sep 27;5(9):7517-24. doi: 10.1021/nn202463g.

PMID:
21819152
12.

Transport Gap Opening and High On-Off Current Ratio in Trilayer Graphene with Self-Aligned Nanodomain Boundaries.

Wu HC, Chaika AN, Huang TW, Syrlybekov A, Abid M, Aristov VY, Molodtsova OV, Babenkov SV, Marchenko D, Sánchez-Barriga J, Mandal PS, Varykhalov AY, Niu Y, Murphy BE, Krasnikov SA, Lübben O, Wang JJ, Liu H, Yang L, Zhang H, Abid M, Janabi YT, Molotkov SN, Chang CR, Shvets I.

ACS Nano. 2015 Sep 22;9(9):8967-75. doi: 10.1021/acsnano.5b02877.

PMID:
26302083
13.

Conductance modulation of charged lipid bilayer using electrolyte-gated graphene-field effect transistor.

Kiani MJ, Harun FK, Ahmadi MT, Rahmani M, Saeidmanesh M, Zare M.

Nanoscale Res Lett. 2014 Jul 30;9(1):371. doi: 10.1186/1556-276X-9-371.

14.

Raman characterization of ABA- and ABC-stacked trilayer graphene.

Cong C, Yu T, Sato K, Shang J, Saito R, Dresselhaus GF, Dresselhaus MS.

ACS Nano. 2011 Nov 22;5(11):8760-8. doi: 10.1021/nn203472f.

PMID:
21962035
15.

Influence of disorder on conductance in bilayer graphene under perpendicular electric field.

Miyazaki H, Tsukagoshi K, Kanda A, Otani M, Okada S.

Nano Lett. 2010 Oct 13;10(10):3888-92. doi: 10.1021/nl1015365.

PMID:
20804214
16.

Structural and electronic properties of bilayer and trilayer graphdiyne.

Zheng Q, Luo G, Liu Q, Quhe R, Zheng J, Tang K, Gao Z, Nagase S, Lu J.

Nanoscale. 2012 Jul 7;4(13):3990-6. doi: 10.1039/c2nr12026g.

PMID:
22677896
17.

Large hexagonal bi- and trilayer graphene single crystals with varied interlayer rotations.

Yan Z, Liu Y, Ju L, Peng Z, Lin J, Wang G, Zhou H, Xiang C, Samuel EL, Kittrell C, Artyukhov VI, Wang F, Yakobson BI, Tour JM.

Angew Chem Int Ed Engl. 2014 Feb 3;53(6):1565-9. doi: 10.1002/anie.201306317.

PMID:
24453109
18.

Magneto-optical properties of ABC-stacked trilayer graphene.

Lin YP, Lin CY, Ho YH, Do TN, Lin MF.

Phys Chem Chem Phys. 2015 Jun 28;17(24):15921-7. doi: 10.1039/c5cp02496j.

PMID:
26020611
19.
20.

Electronic structure and quantum transport properties of trilayers formed from graphene and boron nitride.

Zhong X, Amorim RG, Scheicher RH, Pandey R, Karna SP.

Nanoscale. 2012 Sep 7;4(17):5490-8. doi: 10.1039/c2nr31310c.

PMID:
22854975
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