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Items: 1 to 20 of 134

1.

Pinch-off mechanism in double-lateral-gate junctionless transistors fabricated by scanning probe microscope based lithography.

Larki F, Dehzangi A, Abedini A, Abdullah AM, Saion E, Hutagalung SD, Hamidon MN, Hassan J.

Beilstein J Nanotechnol. 2012;3:817-23. doi: 10.3762/bjnano.3.91. Epub 2012 Dec 3.

2.

Electrical property comparison and charge transmission in p-type double gate and single gate junctionless accumulation transistor fabricated by AFM nanolithography.

Dehzangi A, Abdullah AM, Larki F, Hutagalung SD, Saion EB, Hamidon MN, Hassan J, Gharayebi Y.

Nanoscale Res Lett. 2012 Jul 11;7(1):381. doi: 10.1186/1556-276X-7-381.

3.

Vertical Ge/Si Core/Shell Nanowire Junctionless Transistor.

Chen L, Cai F, Otuonye U, Lu WD.

Nano Lett. 2016 Jan 13;16(1):420-6. doi: 10.1021/acs.nanolett.5b04038. Epub 2015 Dec 21.

PMID:
26674542
4.

Silicon nanowire transistors with a channel width of 4 nm fabricated by atomic force microscope nanolithography.

Martinez J, Martínez RV, Garcia R.

Nano Lett. 2008 Nov;8(11):3636-9. doi: 10.1021/nl801599k. Epub 2008 Oct 1.

PMID:
18826289
5.

Effect of geometric parameters on the performance of p-type junctionless lateral gate transistors.

Larki F, Dehzangi A, Md Ali SH, Jalar A, Islam MS, Hamidon MN, Majlis BY.

PLoS One. 2014 Apr 17;9(4):e95182. doi: 10.1371/journal.pone.0095182. eCollection 2014.

6.

Experimental study on the subthreshold swing of silicon nanowire transistors.

Zhang Y, Xiong Y, Yang X, Wang Y, Han W, Yang F.

J Nanosci Nanotechnol. 2010 Nov;10(11):7113-6.

PMID:
21137876
7.

In situ axially doped n-channel silicon nanowire field-effect transistors.

Ho TT, Wang Y, Eichfeld S, Lew KK, Liu B, Mohney SE, Redwing JM, Mayer TS.

Nano Lett. 2008 Dec;8(12):4359-64. doi: 10.1021/nl8022059.

PMID:
19367848
8.

Self-aligned fabrication of graphene RF transistors with T-shaped gate.

Badmaev A, Che Y, Li Z, Wang C, Zhou C.

ACS Nano. 2012 Apr 24;6(4):3371-6. doi: 10.1021/nn300393c. Epub 2012 Mar 20.

PMID:
22404336
9.

Gallium arsenide transistors: realization through a molecularly designed insulator.

Jenkins PP, Macinnes AN, Tabib-Azar M, Barron AR.

Science. 1994 Mar 25;263(5154):1751-3.

PMID:
17795383
10.
11.

Unique device operations by combining optical-memory effect and electrical-gate modulation in a photochromism-based dual-gate transistor.

Ishiguro Y, Hayakawa R, Yasuda T, Chikyow T, Wakayama Y.

ACS Appl Mater Interfaces. 2013 Oct 9;5(19):9726-31. doi: 10.1021/am402833k. Epub 2013 Sep 30.

PMID:
24040885
12.

Studies on the Characteristics of Vertical Organic Transistor with Nano Patterned Gate Using Block Copolymer.

Song HB, Lee AN, Oh SY.

J Nanosci Nanotechnol. 2015 Aug;15(8):5951-4.

PMID:
26369178
13.

High-mobility transparent thin-film transistors with an Sb-doped SnO2 nanocrystal channel fabricated at room temperature.

Sun J, Lu A, Wang L, Hu Y, Wan Q.

Nanotechnology. 2009 Aug 19;20(33):335204. doi: 10.1088/0957-4484/20/33/335204. Epub 2009 Jul 28.

PMID:
19636097
14.

Silicon nanowire ion sensitive field effect transistor with integrated Ag/AgCl electrode: pH sensing and noise characteristics.

Kim S, Rim T, Kim K, Lee U, Baek E, Lee H, Baek CK, Meyyappan M, Deen MJ, Lee JS.

Analyst. 2011 Dec 7;136(23):5012-6. doi: 10.1039/c1an15568g. Epub 2011 Oct 10.

PMID:
22068238
15.

Quasi-Two-Dimensional h-BN/β-Ga2O3 Heterostructure Metal-Insulator-Semiconductor Field-Effect Transistor.

Kim J, Mastro MA, Tadjer MJ, Kim J.

ACS Appl Mater Interfaces. 2017 Jun 28;9(25):21322-21327. doi: 10.1021/acsami.7b04374. Epub 2017 Jun 14.

PMID:
28560867
16.

Scanning photocurrent microscopy analysis of Si nanowire field-effect transistors fabricated by surface etching of the channel.

Allen JE, Hemesath ER, Lauhon LJ.

Nano Lett. 2009 May;9(5):1903-8. doi: 10.1021/nl803924z.

PMID:
19326918
17.

Double-gate junctionless transistor for analog applications.

Baruah RK, Pally R.

J Nanosci Nanotechnol. 2013 Mar;13(3):1802-7.

PMID:
23755595
18.

Enhanced channel modulation in dual-gated silicon nanowire transistors.

Koo SM, Li Q, Edelstein MD, Richter CA, Vogel EM.

Nano Lett. 2005 Dec;5(12):2519-23.

PMID:
16351207
19.

Transforming gate misalignment into a unique opportunity to facilitate steep switching in junctionless nanotransistors.

Gupta M, Kranti A.

Nanotechnology. 2016 Nov 11;27(45):455204. Epub 2016 Oct 7.

PMID:
27713187
20.

Boron δ-doped (111) diamond solution gate field effect transistors.

Edgington R, Ruslinda AR, Sato S, Ishiyama Y, Tsuge K, Ono T, Kawarada H, Jackman RB.

Biosens Bioelectron. 2012 Mar 15;33(1):152-7. doi: 10.1016/j.bios.2011.12.044. Epub 2012 Jan 8.

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