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Items: 1 to 20 of 149

1.

Optimal growth of Ge-rich dots on Si(001) substrates with hexagonal packed pit patterns.

Huangfu Y, Zhan W, Hong X, Fang X, Ding G, Ye H.

Nanotechnology. 2013 Jan 25;24(3):035302. doi: 10.1088/0957-4484/24/3/035302. Epub 2012 Dec 21.

PMID:
23263343
2.

Effect of surface Si redistribution on the alignment of Ge dots grown on pit-patterned Si(001) substrates.

Chen HM, Suen YW, Chen SJ, Luo GL, Lai YP, Chen ST, Lee CH, Kuan CH.

Nanotechnology. 2014 Nov 28;25(47):475301. doi: 10.1088/0957-4484/25/47/475301. Epub 2014 Nov 5.

PMID:
25369731
3.

Thermally induced morphology evolution of pit-patterned Si substrate and its effect on nucleation properties of Ge dots.

Chen HM, Kuan CH, Suen YW, Luo GL, Lai YP, Wang FM, Chen ST.

Nanotechnology. 2012 Jan 13;23(1):015303. doi: 10.1088/0957-4484/23/1/015303. Epub 2011 Dec 8.

PMID:
22155926
4.

Heteroepitaxy of Ge on Si(001) with pits and windows transferred from free-standing porous alumina mask.

Huangfu Y, Zhan W, Hong X, Fang X, Ding G, Ye H.

Nanotechnology. 2013 May 10;24(18):185302. doi: 10.1088/0957-4484/24/18/185302. Epub 2013 Apr 11.

PMID:
23579337
5.

Factors influencing epitaxial growth of three-dimensional Ge quantum dot crystals on pit-patterned Si substrate.

Ma YJ, Zhong Z, Yang XJ, Fan YL, Jiang ZM.

Nanotechnology. 2013 Jan 11;24(1):015304. doi: 10.1088/0957-4484/24/1/015304. Epub 2012 Dec 7.

PMID:
23220787
6.

Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si(001) substrates.

Grydlik M, Langer G, Fromherz T, Schäffler F, Brehm M.

Nanotechnology. 2013 Mar 15;24(10):105601. doi: 10.1088/0957-4484/24/10/105601. Epub 2013 Feb 15.

PMID:
23416837
7.

Photoluminescence investigation of strictly ordered Ge dots grown on pit-patterned Si substrates.

Brehm M, Grydlik M, Tayagaki T, Langer G, Schäffler F, Schmidt OG.

Nanotechnology. 2015 Jun 5;26(22):225202. doi: 10.1088/0957-4484/26/22/225202. Epub 2015 May 13.

PMID:
25969173
8.

Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition.

Bollani M, Chrastina D, Fedorov A, Sordan R, Picco A, Bonera E.

Nanotechnology. 2010 Nov 26;21(47):475302. doi: 10.1088/0957-4484/21/47/475302. Epub 2010 Oct 29.

PMID:
21030775
9.

Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature.

Liu Z, Cheng B, Hu W, Su S, Li C, Wang Q.

Nanoscale Res Lett. 2012 Jul 11;7(1):383. doi: 10.1186/1556-276X-7-383.

10.

Kinetics of Ge diffusion, desorption and pit formation dynamics during annealing of Si(0.8)Ge(0.2)/Si(001) virtual substrates.

Zhang Z, Pan JS, Zhang J, Tok ES.

Phys Chem Chem Phys. 2010 Jul 14;12(26):7171-83. doi: 10.1039/b927274g. Epub 2010 May 24.

PMID:
20498899
11.

The fabrication and application of patterned Si(001) substrates with ordered pits via nanosphere lithography.

Chen P, Fan Y, Zhong Z.

Nanotechnology. 2009 Mar 4;20(9):095303. doi: 10.1088/0957-4484/20/9/095303. Epub 2009 Feb 6.

PMID:
19417486
12.

Influence of Si interdiffusion on carbon-induced growth of Ge quantum dots: a strategy for tuning island density.

Bernardi A, Ossó JO, Alonso MI, Goñi AR, Garriga M.

Nanotechnology. 2006 May 28;17(10):2602-8. doi: 10.1088/0957-4484/17/10/026. Epub 2006 Apr 28.

PMID:
21727511
13.

[Comparative study on photoluminescence from Ge/PS and Ge/SiO2 thin films].

Sun XJ, Ma SY, Wei JJ, Xu XL.

Guang Pu Xue Yu Guang Pu Fen Xi. 2008 Sep;28(9):2033-7. Chinese.

PMID:
19093555
14.

Pure, single crystal Ge nanodots formed using a sandwich structure via pulsed UV excimer laser annealing.

Liao TW, Chen HM, Shen KY, Kuan CH.

Nanotechnology. 2015 Apr 24;26(16):165301. doi: 10.1088/0957-4484/26/16/165301. Epub 2015 Mar 27.

PMID:
25815515
15.

Fabrication method of high-quality Ge nanocrystals on patterned Si substrates by local melting point control.

Chiu CW, Liao TW, Tsai KY, Wang FM, Suen YW, Kuan CH.

Nanotechnology. 2011 Jul 8;22(27):275604. doi: 10.1088/0957-4484/22/27/275604. Epub 2011 May 20.

PMID:
21597139
16.

Photoluminescence efficiency and size distribution of self assembled ge dots on porous TiO2.

Rowell NL, Lockwood DJ, Amiard G, Favre L, Ronda A, Berbezier I, Faustini M, Grosso D.

J Nanosci Nanotechnol. 2011 Oct;11(10):9190-5.

PMID:
22400322
17.

Ge quantum dot memory structure with laterally ordered highly dense arrays of Ge dots.

Nassiopoulou AG, Olzierski A, Tsoi E, Berbezier I, Karmous A.

J Nanosci Nanotechnol. 2007 Jan;7(1):316-21.

PMID:
17455497
18.

Formation of Ge quantum dots array in layer-cake technique for advanced photovoltaics.

Chien CY, Chang YJ, Chang JE, Lee MS, Chen WY, Hsu TM, Li PW.

Nanotechnology. 2010 Dec 17;21(50):505201. doi: 10.1088/0957-4484/21/50/505201. Epub 2010 Nov 22.

PMID:
21098937
19.

Highly ordered hexagonally arranged nanostructures on silicon through a self-assembled silicon-integrated porous anodic alumina masking layer.

Zacharatos F, Gianneta V, Nassiopoulou AG.

Nanotechnology. 2008 Dec 10;19(49):495306. doi: 10.1088/0957-4484/19/49/495306. Epub 2008 Nov 18.

PMID:
21730670
20.

InGaAs quantum dots grown by molecular beam epitaxy for light emission on Si substrates.

Bru-Chevallier C, El Akra A, Pelloux-Gervais D, Dumont H, Canut B, Chauvin N, Regreny P, Gendry M, Patriarche G, Jancu JM, Even J, Noe P, Calvo V, Salem B.

J Nanosci Nanotechnol. 2011 Oct;11(10):9153-9.

PMID:
22400316

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