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Items: 1 to 20 of 112

1.

Tightly bound trions in monolayer MoS2.

Mak KF, He K, Lee C, Lee GH, Hone J, Heinz TF, Shan J.

Nat Mater. 2013 Mar;12(3):207-11. doi: 10.1038/nmat3505. Epub 2012 Dec 2.

PMID:
23202371
2.

Trion fine structure and coupled spin-valley dynamics in monolayer tungsten disulfide.

Plechinger G, Nagler P, Arora A, Schmidt R, Chernikov A, Del Águila AG, Christianen PC, Bratschitsch R, Schüller C, Korn T.

Nat Commun. 2016 Sep 2;7:12715. doi: 10.1038/ncomms12715.

3.

Transition metal chalcogenides: ultrathin inorganic materials with tunable electronic properties.

Heine T.

Acc Chem Res. 2015 Jan 20;48(1):65-72. doi: 10.1021/ar500277z. Epub 2014 Dec 9.

PMID:
25489917
4.

Opto-Valleytronic Spin Injection in Monolayer MoS2/Few-Layer Graphene Hybrid Spin Valves.

Luo YK, Xu J, Zhu T, Wu G, McCormick EJ, Zhan W, Neupane MR, Kawakami RK.

Nano Lett. 2017 May 23. doi: 10.1021/acs.nanolett.7b01393. [Epub ahead of print]

PMID:
28534400
5.

Extraordinarily Bound Quasi-One-Dimensional Trions in Two-Dimensional Phosphorene Atomic Semiconductors.

Xu R, Zhang S, Wang F, Yang J, Wang Z, Pei J, Myint YW, Xing B, Yu Z, Fu L, Qin Q, Lu Y.

ACS Nano. 2016 Feb 23;10(2):2046-53. doi: 10.1021/acsnano.5b06193. Epub 2016 Feb 4.

PMID:
26713882
6.

Many-body effects in valleytronics: direct measurement of valley lifetimes in single-layer MoS2.

Mai C, Barrette A, Yu Y, Semenov YG, Kim KW, Cao L, Gundogdu K.

Nano Lett. 2014 Jan 8;14(1):202-6. doi: 10.1021/nl403742j. Epub 2013 Dec 13.

PMID:
24325650
7.

Tightly Bound Trions in Transition Metal Dichalcogenide Heterostructures.

Bellus MZ, Ceballos F, Chiu HY, Zhao H.

ACS Nano. 2015 Jun 23;9(6):6459-64. doi: 10.1021/acsnano.5b02144. Epub 2015 Jun 11.

PMID:
26046238
8.

Mobility engineering and a metal-insulator transition in monolayer MoS₂.

Radisavljevic B, Kis A.

Nat Mater. 2013 Sep;12(9):815-20. doi: 10.1038/nmat3687. Epub 2013 Jun 23.

PMID:
23793161
9.

Valley-dependent spin polarization in bulk MoS2 with broken inversion symmetry.

Suzuki R, Sakano M, Zhang YJ, Akashi R, Morikawa D, Harasawa A, Yaji K, Kuroda K, Miyamoto K, Okuda T, Ishizaka K, Arita R, Iwasa Y.

Nat Nanotechnol. 2014 Aug;9(8):611-7. doi: 10.1038/nnano.2014.148. Epub 2014 Jul 27.

PMID:
25064393
10.

Control of valley polarization in monolayer MoS2 by optical helicity.

Mak KF, He K, Shan J, Heinz TF.

Nat Nanotechnol. 2012 Aug;7(8):494-8. doi: 10.1038/nnano.2012.96. Epub 2012 Jun 17.

PMID:
22706698
11.

Gate-voltage-controlled spin and valley polarization transport in a normal/ferromagnetic/normal MoS₂ junction.

Li H, Shao J, Yao D, Yang G.

ACS Appl Mater Interfaces. 2014 Feb 12;6(3):1759-64. doi: 10.1021/am4047602. Epub 2014 Jan 13.

PMID:
24417464
12.

Electrical control of the valley Hall effect in bilayer MoS2 transistors.

Lee J, Mak KF, Shan J.

Nat Nanotechnol. 2016 May;11(5):421-5. doi: 10.1038/nnano.2015.337. Epub 2016 Jan 25.

PMID:
26809056
13.

Transition metal dichalcogenides and beyond: synthesis, properties, and applications of single- and few-layer nanosheets.

Lv R, Robinson JA, Schaak RE, Sun D, Sun Y, Mallouk TE, Terrones M.

Acc Chem Res. 2015 Jan 20;48(1):56-64. doi: 10.1021/ar5002846. Epub 2014 Dec 9. Erratum in: Acc Chem Res. 2015 Mar 17;48(3):897.

PMID:
25490673
14.

Vapor-solid growth of high optical quality MoS₂ monolayers with near-unity valley polarization.

Wu S, Huang C, Aivazian G, Ross JS, Cobden DH, Xu X.

ACS Nano. 2013 Mar 26;7(3):2768-72. doi: 10.1021/nn4002038. Epub 2013 Mar 1.

PMID:
23427810
15.

Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges.

Duan X, Wang C, Pan A, Yu R, Duan X.

Chem Soc Rev. 2015 Dec 21;44(24):8859-76. doi: 10.1039/c5cs00507h. Epub 2015 Oct 19.

PMID:
26479493
16.

Opto-valleytronic imaging of atomically thin semiconductors.

Neumann A, Lindlau J, Colombier L, Nutz M, Najmaei S, Lou J, Mohite AD, Yamaguchi H, Högele A.

Nat Nanotechnol. 2017 May;12(4):329-334. doi: 10.1038/nnano.2016.282. Epub 2017 Jan 16.

PMID:
28092378
17.

Ultrafast multi-level logic gates with spin-valley coupled polarization anisotropy in monolayer MoS2.

Wang YT, Luo CW, Yabushita A, Wu KH, Kobayashi T, Chen CH, Li LJ.

Sci Rep. 2015 Feb 6;5:8289. doi: 10.1038/srep08289.

18.

Valley polarization in MoS2 monolayers by optical pumping.

Zeng H, Dai J, Yao W, Xiao D, Cui X.

Nat Nanotechnol. 2012 Aug;7(8):490-3. doi: 10.1038/nnano.2012.95. Epub 2012 Jun 17.

PMID:
22706701
19.

Defect-induced photoluminescence in monolayer semiconducting transition metal dichalcogenides.

Chow PK, Jacobs-Gedrim RB, Gao J, Lu TM, Yu B, Terrones H, Koratkar N.

ACS Nano. 2015 Feb 24;9(2):1520-7. doi: 10.1021/nn5073495. Epub 2015 Jan 26.

PMID:
25603228
20.

An optical spectroscopic study on two-dimensional group-VI transition metal dichalcogenides.

Zeng H, Cui X.

Chem Soc Rev. 2015 May 7;44(9):2629-42. doi: 10.1039/c4cs00265b. Epub 2015 Apr 21.

PMID:
25897845

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